Enhanced ferroelectric properties of Mg doped (Ba,Sr)TiO3 thick films grown on (001) SrTiO3 substrates

Liu, Hong; Zhu, Jianguo; Chen, Qiang; Yu, Ping; Xiao, Dingquan

doi:10.1016/j.tsf.2011.12.019

Cited by 11 publications

(4 citation statements)

References 38 publications

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“…The dielectric effects of Mg doped barium strontium titanate are reported in earlier literature also. Liu et al in 2012 also reported value of dielectric constant of Mg substituted BST thick lms around 385 [21] and similar value was reported by Venkata et al in 2009 [22]. Shujuan from his work reported the value of dielectric constant as a function of frequency in the range of 3.1-3.8 [17].…”

Section: Dielectric Propertiessupporting

confidence: 59%

Observation of high dielectric properties of Mg-substituted BST ceramic synthesized by conventional solid-state route

Karol

Prakash

Sharma

2021

J Mater Sci: Mater Electron

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Barium Strontium Titanate exhibits ferroelectric or paraelectric behaviour that depends upon the composition and other factors, making it suitable for a number of applications. We have adopted conventional solid state reaction route to synthesize magnesium substituted barium strontium titanate with low concentration of Mg (Mg= 0.005, 0.010 and 0.015). X-ray diffraction has con rmed the perovskite cubic single phase. The dielectric studies were carried out as a function of temperature at different xed frequencies (1kHz, 10kHz, 50kHz and 100kHz) and as a function of frequency at room temperature. The Curie's temperature of pure BST was 96°C and for Mg substituted BST samples it dropped from 85°C to 63°C. The dielectric permittivity rstly suppressed and then maximum value observed for Mg content 0.015 and dielectric loss is also less than one. The remanance (P r ) and coercivity (E c ) are obtained and analysed for ceramics samples. Improvement in dielectric properties due to substitution of Magnesium is observed.

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Section: Dielectric Propertiessupporting

confidence: 59%

Observation of high dielectric properties of Mg-substituted BST ceramic synthesized by conventional solid-state route

Karol

Prakash

Sharma

2021

J Mater Sci: Mater Electron

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“…Different methods have been proposed to use either a seed or buffer layer to promote crystal growth. Single-crystalline substrates as well as oriented thin films of MgO (1 0 0) [10], SrTiO 3 (1 0 0) [11], LaAlO 3 [12], SRO/CeO 2 /YSZ [9], LaNiO 3 (1 0 0) [13], and Pt/Ti/ SiO 2 [14] have been used to promote the growth of perovskite BaTiO 3 thin films. Since the structure and orientation of the buffer layer can influence the subsequent ferroelectric thin-film growth, the deposition conditions and processing parameters play an important role [15,16].…”

Section: Introductionmentioning

confidence: 99%

Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layers

et al. 2013

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Barium titanate (BaTiO3) thin films are prepared by conventional 2-methoxy ethanol-based chemical solution deposition. We report highly c-axis-oriented BaTiO3 thin films grown on silicon substrates, coated with a lanthanum oxynitrate buffer layer of 8.9 nm. The influence of the intermediate buffer layer on the crystallization of BaTiO3 film is investigated. The annealing temperature and buffer layer sintering conditions are optimized to obtain good crystal growth. X-ray diffraction measurements show the growth of highly oriented BaTiO3 thin films having a single perovskite phase with tetragonal geometry. The scanning electron microscopy and atomic force microscopy studies indicate the presence of smooth, crack-free, uniform layers, with densely packed crystal grains on the silicon surface. A BaTiO3 film of 150-nm thickness, deposited on a buffer layer of 7.2 nm, shows a dielectric constant of 270, remnant polarization (2Pr) of 5 μC/cm2, and coercive field (Ec) of 60 kV/cm.

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“…Alkaline earth stannates MSnO3 (M = Sr, Ba, Ca) are a class of materials possessing the perovskite structure and outstanding dielectric and sensing properties, which can be used in many fields including capacitors, moisture sensors, and solar cells [1][2][3][4] . In contrast with the pure MSnO3, the doping of MSnO3 has attracted more interests of researchers, as the perovskite structure of MSnO3 provides an ideal hosting matrix for the doping of metal elements to form functional materials [5][6][7][8][9][10] . Various metal elements including La, Sb, and Er were doped at M or Sn site of MSnO3 to tune its optical, electrical, and magnetic properties [11][12][13] .…”

Section: Introductionmentioning

confidence: 99%

Microstructure and Band Gap Modulation of SrSn1-xCoxO3 Epitaxial Thin Films via Pulsed Laser Deposition

Hu¹,

<²,

Gao³

et al. 2016

Acta Physico-Chimica Sinica

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摘要：钙钛矿结构 SrSnO3因其独特的介电和半导体性质而备受关注，通过掺杂可显著调控其电学、磁学性能，拓宽其应用范围。本研究在单晶 SrTiO3(001)衬底上通过脉冲激光方法外延生长了 SrSn1-xCoxO3 (x = 0, 0.16, 0.33, 0.5) (SSCO)薄膜，探究了 Co 含量对薄膜结晶性、微观结构、光学性能以及介电性能的影响。结果表明，SrSn1-xCoxO3薄膜可在 SrTiO3(001)衬底上外延生长，Co 掺杂不会导致薄膜结晶质量的劣化。薄膜表面形貌平整、致密，膜厚 200 nm，表面粗糙度为 0.44 nm。随薄膜中 Co 掺杂量增加，薄膜透过率从 90%降

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Enhanced ferroelectric properties of Mg doped (Ba,Sr)TiO3 thick films grown on (001) SrTiO3 substrates

Cited by 11 publications

References 38 publications

Observation of high dielectric properties of Mg-substituted BST ceramic synthesized by conventional solid-state route

Observation of high dielectric properties of Mg-substituted BST ceramic synthesized by conventional solid-state route

Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layers

Microstructure and Band Gap Modulation of SrSn<sub>1-<i>x</i></sub>Co<sub><i>x</i></sub>O<sub>3</sub> Epitaxial Thin Films <i>via</i> Pulsed Laser Deposition

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