Enhanced Ferroelectric Polarization in Laser-ablated Bi4Ti3O12 Thin Films by Controlling Preferred Orientation

Wang, Chuanbin; Luo, Sijun; Shen, Qiang; Hu, Mingzhe; Zhang, Lianmeng

doi:10.1007/s11595-018-1816-9

Cited by 2 publications

(2 citation statements)

References 23 publications

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“…The polarization P increases with decreasing NP size (see Figure 2, curve 2 for x = 0), too. The result is in agreement with the observed experimental data of Wang et al [33] for BiT thin films.…”

Section: Numerical Results and Discussionsupporting

confidence: 93%

Origin of Multiferroism of Ion Doped at Different Sites: Bi₄Ti₃O₁₂ Bulk and Nanoparticles

Apostolova,

Apostolov,

Trimper

et al. 2023

Physica Status Solidi (b)

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Based on a microscopic model and the Green’s function theory we have investigated the temperature, size, magnetic field and ion doping dependence of the magnetic, electric and dielectric properties in Fe‐and Nd‐doped ferroelectric Bi4Ti3O12‐bulk and nanoparticles. The multiferroisms can be achieved in two ways. At once the magnetism appears by substitution of the nonmagnetic Ti4+ ion with Fe3+, or other transition metal ions in bulk Bi4Ti3O12. Otherwise, the simultaneous existence of Fe3+ and Fe4+ giving rise to a super‐exchangenism responsible for the ferromagnetic interaction. Moreover, multiferoism is possible also in pure Bi4Ti3O12 nanoparticles. Due to surface effects and oxygen vacancies leading to different valence states on the surface of Ti3+ or Ti2+ with spin value S≠0 there appears weak magnetism, which can be improved by Fe ion doping. We demonstrate that doping with rare earth ions, for example Nd3+, at the Bi3+ site is able to improve the ferroelectric, multiferroic and dielectric properties.This article is protected by copyright. All rights reserved.

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Section: Numerical Results and Discussionsupporting

confidence: 93%

Origin of Multiferroism of Ion Doped at Different Sites: Bi₄Ti₃O₁₂ Bulk and Nanoparticles

Apostolova,

Apostolov,

Trimper

et al. 2023

Physica Status Solidi (b)

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show abstract

“…However, for ferroelectric device application, films with spontaneous polarization normal to the plane of growth are required. Researchers have paid much attention on epitaxially a/b‐ axes‐oriented Bi 4 Ti 3 O 12 thin films by controlling substrates, buffer layers, deposition conditions, heating rates, and layer thickness . We fabricated Bi 3.15 Nd 0.85 Ti 3 O 12 (BNdT) thin films with 62% a/b ‐axes preferential orientation, 50% c ‐axis orientation, 65(104)/(014) orientation, and random orientation, respectively, on standard‐type Pt/Ti/SiO 2 /Si substrates through a sol–gel process .…”

Section: Scaling Exponents Of Different Ferroelectric Systemsmentioning

confidence: 99%

Enhancing Speed and Stability of Polarization Reversal in Predominantly a/b‐Axes‐Oriented Bi₄Ti₃O₁₂ Thin Films Deposited on Pt/Ti/SiO₂/Si

Zhang

et al. 2019

Physica Rapid Research Ltrs

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Bi4Ti3O12‐based thin films of a/b‐axes orientation grown on standard‐type Pt/Ti/SiO2/Si substrates are desirable for designing reliable ferroelectric devices. Herein, a/b‐axes‐oriented and randomly oriented Bi4Ti3O12 thin films are deposited on Pt/Ti/SiO2/Si through a sol–gel process. As expected, the a/b‐axes‐oriented films show a higher remnant polarization than that of randomly oriented films. The characteristic time τ of domain reversal in 74% a/b‐axes‐oriented Bi4Ti3O12 films is 1.1 ms, notably shorter than that (τ > 2.5 ms) for randomly oriented films. The dynamic hysteresis scaling relations of the randomly oriented 56% and 74% a/b‐axes‐oriented Bi4Ti3O12 films take the forms of ⟨A⟩ ∝ f−0.106E01.667, ⟨A⟩ ∝ f−0.035E00.952, and ⟨A⟩ ∝ f−0.026E00.600, respectively. The difference indicates that domain reversal in Bi4Ti3O12 films of predominant a/b‐axes orientation exhibits higher stability compared with randomly oriented Bi4Ti3O12 films under varying electric fields E(E0, f). The enhancing speed and stability of polarization reversal in predominantly a/b‐axes‐oriented Bi4Ti3O12 films can be understood in terms of their layered‐perovskite structure, large columnar grains, oxygen vacancies mobility, domain states, and polarization switching mechanism.

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Enhanced Ferroelectric Polarization in Laser-ablated Bi4Ti3O12 Thin Films by Controlling Preferred Orientation

Cited by 2 publications

References 23 publications

Origin of Multiferroism of Ion Doped at Different Sites: Bi₄Ti₃O₁₂ Bulk and Nanoparticles

Origin of Multiferroism of Ion Doped at Different Sites: Bi₄Ti₃O₁₂ Bulk and Nanoparticles

Enhancing Speed and Stability of Polarization Reversal in Predominantly a/b‐Axes‐Oriented Bi₄Ti₃O₁₂ Thin Films Deposited on Pt/Ti/SiO₂/Si

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Enhanced Ferroelectric Polarization in Laser-ablated Bi4Ti3O12 Thin Films by Controlling Preferred Orientation

Cited by 2 publications

References 23 publications

Origin of Multiferroism of Ion Doped at Different Sites: Bi4Ti3O12 Bulk and Nanoparticles

Origin of Multiferroism of Ion Doped at Different Sites: Bi4Ti3O12 Bulk and Nanoparticles

Enhancing Speed and Stability of Polarization Reversal in Predominantly a/b‐Axes‐Oriented Bi4Ti3O12 Thin Films Deposited on Pt/Ti/SiO2/Si

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Origin of Multiferroism of Ion Doped at Different Sites: Bi₄Ti₃O₁₂ Bulk and Nanoparticles

Origin of Multiferroism of Ion Doped at Different Sites: Bi₄Ti₃O₁₂ Bulk and Nanoparticles

Enhancing Speed and Stability of Polarization Reversal in Predominantly a/b‐Axes‐Oriented Bi₄Ti₃O₁₂ Thin Films Deposited on Pt/Ti/SiO₂/Si