Enhanced energy-storage properties of SrTiO3 doped (Bi1/2Na1/2)TiO3–(Bi1/2K1/2)TiO3 lead-free antiferroelectric ceramics

Ye, Jiaojiao; Liu, Yunfei; Lü, Yinong; Ding, Jianxiang; Ma, Chengjian; Qian, Hao; Yu, Zhenglei

doi:10.1007/s10854-014-2215-5

Cited by 40 publications

(23 citation statements)

References 35 publications

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“…Due to their high field transformation, low hysteresis, low remnant polarization and high energy storage density, AFE materials have been proposed as leading contenders for solid-state capacitor applications [50,51,52,66,72]. However, since the materials typically belong to the perovskite ceramic family they suffer from low dielectric breakdown strength [73,74].…”

Section: Anti-ferroelectricity and Associated Materialsmentioning

confidence: 99%

Anti-Ferroelectric Ceramics for High Energy Density Capacitors

et al. 2015

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With an ever increasing dependence on electrical energy for powering modern equipment and electronics, research is focused on the development of efficient methods for the generation, storage and distribution of electrical power. In this regard, the development of suitable dielectric based solid-state capacitors will play a key role in revolutionizing modern day electronic and electrical devices. Among the popular dielectric materials, anti-ferroelectrics (AFE) display evidence of being a strong contender for future ceramic capacitors. AFE materials possess low dielectric loss, low coercive field, low remnant polarization, high energy density, high material efficiency, and fast discharge rates; all of these characteristics makes AFE materials a lucrative research direction. However, despite the evident advantages, there have only been limited attempts to develop this area. This article attempts to provide a focus to this area by presenting a timely review on the topic, on the relevant scientific advancements that have been made with respect to utilization and development of anti-ferroelectric materials for electric energy storage applications. The article begins with a general introduction discussing the need for high energy density capacitors, the present solutions being used to address this problem, and a brief discussion of various advantages of anti-ferroelectric materials for high energy storage applications. This is followed by a general description of anti-ferroelectricity and important anti-ferroelectric materials. The remainder of the paper is divided into two subsections, the first of which presents various physical routes for enhancing the energy storage density while the latter section describes chemical routes for enhanced storage density. This is followed by conclusions and future prospects and challenges which need to be addressed in this particular field.

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Section: Anti-ferroelectricity and Associated Materialsmentioning

confidence: 99%

Anti-Ferroelectric Ceramics for High Energy Density Capacitors

et al. 2015

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“…The maximum value of W was Fig. 6 a The energy-loss density W loss and energy efficiency g as a function of the KNN concentration x. b The maximum electric field intensity E max and energy-storage density W of (1 -x)(0.84NBT-0.16KBT)-xKNN (0 B x B 0.15) ceramics under room temperature and 10 kHz 1.56 J/cm 3 at 10 Hz in all ceramic samples, which was higher than those NBT-based lead-free ceramics and Pbbased anti-ferroelectric energy-storage ceramics [5,24,27,28].…”

Section: Energy-storage Propertiesmentioning

confidence: 99%

Enhancement of energy-storage properties of K0.5Na0.5NbO3 modified Na0.5Bi0.5TiO3–K0.5Bi0.5TiO3 lead-free ceramics

Zhao

Cao

Wang

et al. 2015

J Mater Sci: Mater Electron

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A lead-free ceramics (1 -x)(0.84Na 0.5 Bi 0.5 TiO 3 -0.16K 0.5 Bi 0.5 TiO 3 )-xK 0.5 Na 0.5 NbO 3 (x = 0, 0.03, 0.06, 0.09, 0.12, 0.15) for energy-storage application have been fabricated by conventional solid state method. All compositions were crystallized into perovskite solid solution structure ascertained by XRD. SEM micrograph revealed that homogeneous grain could be obtained by addition of appropriate K 0.5 Na 0.5 NbO 3 (KNN). The depolarization temperature (T d ) decreased significantly from 140 to 70°C, while the maximum dielectric constant temperature (T m ) reduced slightly with increasing KNN. And the addition of KNN improved the energy-storage properties significantly by weakening the ferroelectricity of Na 0.5 Bi 0.5 TiO 3 -K 0.5 Bi 0.5 TiO 3 (NBT-KBT) ceramics. When x = 0.09, the highest energy-storage density (W = 1.51 J/cm 3 ) and energy efficiency (g = 65.0 %) were obtained at room temperature. Besides, the temperature stability of energy-storage density could satisfy DW/ W 100°C B ±20 % when the addition of KNN was over 0.09 from 20 to 150°C.

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“…However, the poling of the pure BNT is very difficult due to its high coercive field (E c = 7.3 kV/mm) [5] and thus much weaker piezoelectric properties (d 33 = 58 pC/N) are obtained in the ceramics [6] than the PZT ceramics. Many efforts have been carried out to improve the piezoelectric properties of the BNT ceramics, these including the formation of the BNT-based solid solutions (e.g., BNT-BaTiO 3 [5], BNT-NaNbO 3 [7], BNT-SrTiO 3 [8], BNT-Bi 0.5 K 0.5 TiO 3 -KNbO 3 [9], (Na 0.5 Bi 0.5 ) 0.94 Ba 0.06 TiO 3 -SmAlO 3 [10]), the doping with metal oxides (e.g., CeO 2 -doping BNT-BaTiO 3 [11], SrTiO 3 -doping BNT-Bi 1/2 K 1/2 TiO 3 [12]), as well as the partial substitutions of A-site or B-site ions by analogous ions (e.g., (Bi 0.5 Na 0.5 ) 0.94 Ba 0.06 Zr y Ti 1-y O 3 [13], [Bi 0.5 (Na 1-x-y K x Li y ) 0.5 ]TiO 3 [14], [(Bi 0.5 Na 0.5 ) 0.94 Ba 0.06 ] 1-x Sr x TiO 3 [15]). Among these solid solutions, BNT-BaTiO 3 (BNT-BT) ceramics are studied frequently and the composition of 0.94Bi 0.5 Na 0.5 TiO 3 -0.06BaTiO 3 exhibits the best piezoelectricity due to morphotropic phase boundary (MPB) [16].…”

Section: Introductionmentioning

confidence: 99%

Improved piezoelectric and bright up-conversion photoluminescent properties in Ho-doped Bi0.5Na0.5TiO3–BaTiO3 lead-free ceramics

Zhou

Zou

Tian

et al. 2015

J Mater Sci: Mater Electron

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Lead-free ceramics of 0.94(Bi 1-x Ho x Na) 0.5 TiO 3 -0.06BaTiO 3 have been prepared by a conventional solid reaction method and their piezoelectric, ferroelectric and photoluminescent properties have been studied. After the partial substitution of Ho 3? for Bi 3? , a new Bi 0.5 Na 0.5 TiO 3 -based solid solution with a pure perovskite structure is formed. The doping of Ho 3? has no obvious influence on the crystal structure of the ceramics. After the addition of a small amount of Ho 3? (x = 0.015), the piezoelectricity (d 33 = 187 pC/N, k p = 41.1 %, respectively) and ferroelectricity (P r = 25.2 lC/cm 2 ) of ceramics are enhanced. The down-conversion and up-conversion photoluminescence of the ceramics are observed. A green down-conversion emission band at 548 nm is observed which is from the 5 S 2 ? 5 I 8 transition of Ho 3? ; the main down-conversion excitation bands located at 410-500 nm is due to the 5 I 8 ? 5 G 5, 6 transitions, and the maximum brightness of down-conversion photoluminescence are obtained at x = 0.015. The ceramic with x = 0.01 exhibits the maximum value of the up-conversion emission at 475 nm, which is attributed to the 5 F 3 ? 5 I 8 transition. Our study shows that the ceramics with x = 0.01-0.02 exhibit simultaneously good piezoelectricity, strong ferroelectricity and excellent photoluminescence, suggesting a potential application in the electro-optic devices.

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Enhanced energy-storage properties of SrTiO3 doped (Bi1/2Na1/2)TiO3–(Bi1/2K1/2)TiO3 lead-free antiferroelectric ceramics

Cited by 40 publications

References 35 publications

Anti-Ferroelectric Ceramics for High Energy Density Capacitors

Anti-Ferroelectric Ceramics for High Energy Density Capacitors

Enhancement of energy-storage properties of K0.5Na0.5NbO3 modified Na0.5Bi0.5TiO3–K0.5Bi0.5TiO3 lead-free ceramics

Improved piezoelectric and bright up-conversion photoluminescent properties in Ho-doped Bi0.5Na0.5TiO3–BaTiO3 lead-free ceramics

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