Enhanced electron mobility in novel side-gated quantum wire structures

Wirner, C.; Momose, H.; Hamaguchi, Chihiro; Smoliner, J.; Köck, A.; Gornik, E.

doi:10.1088/0268-1242/11/7/017

Cited by 4 publications

(2 citation statements)

References 11 publications

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“…But the decrease in k qw is weaker for the DHJ as experimentally confirmed. 3 Our shallow etched DHS wires with the gate covering the whole surface show similar behavior as the potential narrows faster than k qw decreases. The difference between our DHS and a SHJ is probably enhanced by the doping on the back side of the GaAs quantum well.…”

Section: Measured Parametersmentioning

confidence: 59%

One-dimensional effects in quantum wires made from a double heterojunction based on the AlAs/GaAs system

Sander

1999

Journal of Applied Physics

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Narrow quantum wires of length 1–4 μm were fabricated by wet chemical etching from a heterostructure consisting of a 10 nm GaAs quantum well embedded into a δ-doped AlAs/GaAs short-period superlattice. Studying the magnetotransport at T=0.3 K the diffuse boundary scattering effect is observed. The position of the occurring peak depends strongly on the top gate voltage in contrast to previous reports. The depopulation of magnetoelectric subbands is identified in power spectra of the oscillatory magnetoresistance. The experimental results are used to estimate an electrical wire width and the Fermi wave vector. It is found that the wire conductance is mainly controlled through a narrowing of the potential from the sides. This is attributed to the stronger Fermi level pinning in the barrier layer of a double heterostructure compared to a single heterojunction. A wire of length 1 μm shows conductance steps at zero field. They vanish on applying a weak magnetic field.

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Section: Measured Parametersmentioning

confidence: 59%

One-dimensional effects in quantum wires made from a double heterojunction based on the AlAs/GaAs system

Sander

1999

Journal of Applied Physics

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“…8 Thus, a study of the anisotropy of carrier transport in SILO QWRs is also essential in enhancing our understanding of the microstructure and electronic properties of phase-separated materials. [9][10][11][12][13] In this letter, we utilize a new combination of timeresolved cathodoluminescence ͑CL͒ and noncontact Haynes-Shockley diffusion measurements to investigate the carrier diffusion in the ͗110͘ lateral directions with a mask method. 14,15 This method involves patterning samples with a thin metallic mask that allows for penetration of the scanning electron probe but restricts the collection of luminescence emitted from carrier recombination.…”

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confidence: 99%

An optical method for studying carrier diffusion in strained (InP)2/(GaP)2 quantum wires

Tang

Rich

Moy

et al. 1998

Applied Physics Letters

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Articles you may be interested inInGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells Appl. Phys. Lett. 105, 083124 (2014); 10.1063/1.4894424Optical study of a -plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition J. Appl. Phys. Spatial variations in luminescence and carrier relaxation in molecular beam epitaxial grown (InP) 2 /(GaP) 2 quantum wires

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Conductance quantization in deep mesa-etched gate-controlled ballistic electron waveguides

Raichev

Debray

2004

Journal of Applied Physics

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We present a theoretical study of the ballistic conductance in electron waveguides created by deep mesa etching from quantum-well structures with a two-dimensional electron gas (2DEG) in the well. The widths of the waveguides are controlled by gate bias voltages. We consider three different cases: the etched waveguide is completely covered by a gate [continuous gate (CG)], the gate is deposited on top of the waveguide [top gate (TG)], and when the gates are located on the etched side walls [side gate (SG)]. The number and periodicity of the quantized conductance steps, as well as the energy separation of the one-dimensional subbands near the Fermi level are determined as functions of the parameters of the device. The CG device provides a fairly periodic quantized conductance staircase. The highest subband separation is achieved for the TG device etched well below the 2DEG layer and for the SG device etched slightly below it.

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Enhanced electron mobility in novel side-gated quantum wire structures

Cited by 4 publications

References 11 publications

One-dimensional effects in quantum wires made from a double heterojunction based on the AlAs/GaAs system

One-dimensional effects in quantum wires made from a double heterojunction based on the AlAs/GaAs system

An optical method for studying carrier diffusion in strained (InP)2/(GaP)2 quantum wires

Conductance quantization in deep mesa-etched gate-controlled ballistic electron waveguides

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