Enhanced electrical properties of Ba0.5Sr0.5TiO3 thin films grown by ultraviolet-assisted pulsed-laser deposition

Srivastava, Anuranjan; Crăciun, V.; Howard, Joshua; Singh, Rajiv K.

doi:10.1063/1.125215

Cited by 34 publications

(12 citation statements)

References 19 publications

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“…Similar reduction in leakage characteristics have been observed for Ta 2 O 5 films UV-annealed (172 nm eximer lamp) at 400 C/ 60 min, 37 Ta 2 O 5 films grown by photo-pulsed laser vapor deposition PLD, 38 for UVA HfO 2 films (mercury lamp), 46 and for BST films grown by UV-PLD. 47 Our results demonstrated that the reduction in leakage current density (Fig. 5) paralleled the reduction in dielectric loss (Fig.…”

Section: Resultssupporting

confidence: 59%

Ultraviolet assisted processing: A unique approach to mitigate oxygen vacancies and attain low loss highly tunable Ba0.60Sr0.40TiO3 thin films

Cole

Toonen

Ivill

et al. 2011

Journal of Applied Physics

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Section: Resultssupporting

confidence: 59%

Ultraviolet assisted processing: A unique approach to mitigate oxygen vacancies and attain low loss highly tunable Ba0.60Sr0.40TiO3 thin films

Cole

Toonen

Ivill

et al. 2011

Journal of Applied Physics

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“…Material systems that have been, and continue to be, explored for use as alternative gate dielectrics include Ta 2 O 5 , 2 TiO 2 , 3 ZrO 2 , 4 Al 2 O 3 , 5 HfO 2 , 6 La 2 O 3 , 7 Y 2 O 3 , 7 and (Ca,Ba,Sr͒TiO 3 . [8][9][10] For MOSFET structures, the oxide/semiconductor interface largely determines the properties of the device. Interfacial layers resulting from reaction of the deposited oxide with silicon can severely limit the effective capacitance/area realized.…”

Section: Introductionmentioning

confidence: 99%

Strontium silicide termination and silicate epitaxy on (001) Si

Norton

Park

Lee

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We have investigated the epitaxial growth of (Sr,Ba)-based oxides on SrSi2-terminated (001) Si using laser-molecular beam epitaxy. Reflection high-energy electron diffraction (RHEED) confirms the formation of a commensurate submonolayer of (Ba,Sr)Si2 when strontium and barium ablation targets are used as the metal sources. Stability of the silicide RHEED peak intensity between laser ablation pulses indicates that the submonolayer SrSi2 coverage is relatively stable during formation despite the required high temperatures. While the subsequent growth of BaO via Ba metal ablation and O2 flux on the SrSi2-terminated surface is favored at low temperatures, the formation of an epitaxial silicate is observed for oxide formation at temperatures above 550 °C. X-ray diffraction confirms that the Ba2SiO4 film formed with elevated temperature oxidation is in-plane aligned. These results suggest that while epitaxial BaO can be realized on SrSi2-terminated Si, the interface may be susceptible to silicate formation upon thermal treatment. These results also demonstrate that laser-molecular beam epitaxy can be effective in achieving submonolayer surface coverage specifically for terminating silicon for oxide epitaxy.

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“…Hence, BST thin films attracted much attention and turned into one of the predominant materials for UFPAs for its outstanding pyroelectric properties. The BST thin films usually have been deposited by radio frequency (RF) sputtering [10], metal organic chemical vapor deposition (MOCVD) [11], pulsed laser deposition (PLD) [12] and sol-gel methods [13]. Compared with the conventional methods, sol-gel technique offers a homogeneous distribution of elements on a molecular level, ease of composition control, thigh purity, the possibility of low temperature processing, and the ability to coat large and complex area substrates [14].…”

Section: Introductionmentioning

confidence: 99%

FABRICATION AND CHARACTERISTICS OF Pb DOPED BST FERROELECTRIC THIN FILMS FOR UNCOOLED INFRARED FOCAL PLANE ARRAYS

Zeng

Zhang

Jiang

et al. 2006

Integrated Ferroelectrics

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Ba 1−x Sr x )TiO 3 (BST) ferroelectric thin films with Pb doped from 1 to 10 mol % were fabricated on Pt/Ti/SiO 2 /Si substrates by sol-gel technique in order to improve the crystallographic properties and decrease the ferroelectric relaxation and the diffuse phase transition. The microstructures, surface morphology, dielectric properties, and ferroelectric properties of BST thin films were studied. The Pb doping increased the BST grain size, lowered the diffusion phase transition, and narrowed the diffuse phase region of BST thin films. We found that 5 mol% Pb doped (Ba 0.8 Sr 0.2 )TiO 3 thin films show a strong preferential orientation of crystallites in (110), excellent ferroelectric properties, the better crystallographic properties, and low loss tangent, which is basically suitable for the detecting materials of uncooled infrared focal plane arrays (UFPAs). The 5 mol% Pb doped BST thin films with dielectric constant of 402, loss tangent of 0.011, remanent polarization of 3.8 µCcm −2 , a coercive field of 45 kVcm −1 have been fabricated by using sol-gel process.

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Enhanced electrical properties of Ba0.5Sr0.5TiO3 thin films grown by ultraviolet-assisted pulsed-laser deposition

Cited by 34 publications

References 19 publications

Ultraviolet assisted processing: A unique approach to mitigate oxygen vacancies and attain low loss highly tunable Ba0.60Sr0.40TiO3 thin films

Ultraviolet assisted processing: A unique approach to mitigate oxygen vacancies and attain low loss highly tunable Ba0.60Sr0.40TiO3 thin films

Strontium silicide termination and silicate epitaxy on (001) Si

FABRICATION AND CHARACTERISTICS OF Pb DOPED BST FERROELECTRIC THIN FILMS FOR UNCOOLED INFRARED FOCAL PLANE ARRAYS

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