Enhanced Electrical and Mechanical Performance of InSnZnO TFTs With Multifunctional Laminated Organic Passivation Layer

High Performance Indium-Tin-Zinc-Oxide Thin-Film Transistor with Hexamethyldisilazane Passivation

“…Various passivation layers, including organic, inorganic, and organic/inorganic hybrid options have been applied to ITZO TFTs, leading to enhanced electrical performance and stability consistent with our findings. 9,14,15,18,19,37 Notably, our spincoated HMDS passivation layer stands out as a cost-effective alternative among the various organic-solution-based passivation layers. HMDS passivation layers exhibit a similar ability to react with −OH groups as other organic self-assembled monolayer passivation layers, such as n-octyltriethoxysilane and n-octadecyltrichlorosilane.…”

P‐1.4: Synergistic Enhancement of Stability and Mobility in ZrO2‐Doped ITZO TFTs with MLO Passivation

“…In the previous work, we proposed a multifunctional laminated organic (MLO) passivation layer (PVL) for ITZO TFTs to enhance reliability in various environments [4][5]. The stability under positive bias stress (PBS) and illumination stress is significantly improved.…”

Benzylphosphonic acid treated ultra-thin ALD-InOx for long term device stability

“…[17][18][19] Therefore, the use of SAMs in TFTs has shown great potential for improving stability and reducing device degradation over a prolonged time-lapse. [20][21][22][23][24][25] Although In 2 O 3 TFTs with fine thickness control by atomic layer deposition (ALD) have been studied extensively, research on the longterm V th stability of these devices remains limited. 7,9,10,26,27 Given the practical importance of electrical stability, particularly in light of the potential of In 2 O 3 TFTs to achieve high mobility, in this paper, we show that utilizing PA organic layer passivation improves both the electrical stability and V th values of ultra-thin In 2 O 3 TFTs over time.…”

“…Based on these findings, it can be inferred that the bias instability of In 2 O 3 TFTs under NBS and PBS is caused by charge coupling modulation due to the potential energy of molecules adsorbed on the In 2 O 3 back channel. 14,38,42,43 Additionally, Fig. S4 in the ESI, † presents the results of positive (PBTS) and negative bias temperature stress (NBTS) tests conducted to investigate the thermal stability of the BPA passivation layers.…”