Enhanced Electrical Activation in In-Implanted Si_0.35Ge_0.65 by C Co-Doping

Abstract

In this report, we have achieved a significant increase in the electrically active dopant fraction in Indium (In)-implanted Si 0.35 Ge 0.65 , by co-doping with the isovalent element Carbon (C). Electrical measurements have been correlated with X-ray absorption spectroscopy to determine the electrical properties and the In atom lattice location. With C + In co-doping, the solid solubility of In in Si 0.35 Ge 0.65 was at least tripled from between 0.02 and 0.06 at% to between 0.2 and 0.6 at% as a result of C-In pair formation, which suppressed In metal precipitation. A dramatic improvement of electrical properties was thus attained in the co-doped samples. IMPACT STATEMENTThis work is the first to demonstrate that co-doping Carbon (C) with Indium (In) in SiGe is an effective strategy for obtaining high electrically active dopant fractions, which benefits advanced complementary metal-oxide semiconductor (CMOS) devices performance. ARTICLE HISTORY