Enhanced drivability of high-V&lt;inf&gt;bd&lt;/inf&gt; dual-oxide-based complementary BEOL-FETs for compact on-chip pre-driver applications

Sunamura, H.; Inoue, N.; Furutake, N.; Saito, S.; Narihiro, M.; Hane, M.; Hayashi, Y.

doi:10.1109/vlsit.2014.6894426

Cited by 11 publications

(15 citation statements)

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“…One of the major figure of merits for HV TFTs is to reduce specific ON-resistance (AR ON ) while retain V BD as high as possible. Figure 8 compares the relationships of AR ON and V BD for our ZnO HV-FPETFTs with the previously reported data measured on IGZO TFTs 21,24) and Si laterally diffused metal-oxide-semiconductor (LDMOS) devices. 31) It is clear to see that all the AR ON -V BD curves are nearly linear, indicating the trade-off between AR ON and V BD .…”

Section: Resultsmentioning

confidence: 76%

“…It is evident that I ON decreases with increasing L GDO due to an increase in the resistance of the G/D-offset region. [22][23][24] We are able to extract V BD of ZnO FPE-TFTs by measuring gate currents (I G ) as a function of V D when biased in the off-state (V G = V S = 0 V). V BD is defined as the applied drain voltage at which |I G | dramatically increases and exceeds the value of 10 -9 A, according to the extraction method mentioned in Ref.…”

Section: Resultsmentioning

confidence: 99%

“…In this regard, MO TFTs with a gate-to-drain (G/D) offset structure were proposed and demonstrated to increase the V BD of devices at the expense of reduced ON-state current (I ON ) due to the additional resistance arising from the offset region. 23,24) In this work, we report that HV and high drive current are simultaneously achievable for ZnO TFTs by adjusting the G/ D-offset lengths in the mask layouts in combination with the auxiliary gate (AG) modulation. The studied ZnO TFTs were fabricated by the film-profile engineering (FPE) method.…”

Section: Introductionmentioning

confidence: 99%

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Film-profile-engineered ZnO thin-film transistor with gate/drain offset for high-voltage operation

Wu¹,

Lin²,

Li³

2019

Jpn. J. Appl. Phys.

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We report the design and fabrication of ZnO thin-film transistors (TFTs) configured with designed gate-to-drain (G/D)-offset structures and an auxiliary gate (AG) in a film-profile engineering (FPE) approach for back-end-of-line high-voltage (HV) operation. The breakdown voltage (V BD ) of fabricated FPE TFTs is significantly enhanced from 23 to 90 V by changing the G/D-offset length from −0.3 to 0.5 μm, whereas there is a corresponding decrease in the on-state current and transconductance (G m ). To boost the on-state current, an AG biased in the range of 0-5 V is designed to effectively modulate the resistivity of the G/D-offset region and improve G m by a factor of 2 while keeping V BD of 65−70 V nearly unchanged. Output characteristics with drain voltage as high as 60 V have been demonstrated, evidencing the promising potential of the ZnO TFTs for HV device applications.

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Section: Resultsmentioning

confidence: 76%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Film-profile-engineered ZnO thin-film transistor with gate/drain offset for high-voltage operation

Wu¹,

Lin²,

Li³

2019

Jpn. J. Appl. Phys.

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“…2. [10][11][12][13][14][15] As written in the conference proceeding, ability of high voltage operation with small feature size is expected as an interface bridge for signal conversion between CMOS core-logics with lowvoltages and peripheral devices driven with high-voltages. A p-type amorphous SnO TFT is developed as a complement component to n-type IGZO TFTs.…”

Section: Power Devicesmentioning

confidence: 99%

Emerging applications using metal-oxide semiconductor thin-film devices

Kimura

2019

Jpn. J. Appl. Phys.

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Metal-oxide semiconductors are widely used for thin-film transistors for flat-panel displays, but they do not seem to be limited to the conventional applications. In this review, emerging applications using metal-oxide semiconductor thin-film devices are reviewed, which may be novel killer applications in the future. First, the essential advantages are enumerated, and, next, based on the essential advantages, several proposals of emerging applications from many organizations are introduced. First, power devices using metal-oxide semiconductor thin-film devices are proposed, because they can be tolerant against high voltage, and the carrier mobility is high. Second, sensing devices are proposed, because the electrical characteristic can be sensitive to peripheral environment, and the thin-film devices can be fabricated on large areas with low cost. Third, thermoelectric devices are proposed, because the Seebeck coefficients can be improved, and the cost performance is the most important. Fourth, computing applications, including many kinds of related applications, are proposed, where various essential advantages are available each. Finally, neuromorphic systems are proposed, where the metal-oxide semiconductor thin-film devices have the potential possibility to be key components in neuromorphic systems for artificial intelligences, which are central concepts in smart societies.

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“…Since IGZO is a wide-band-gap semiconductor, IGZO TFTs are expected to show high breakdown voltage and low offstate current compared to those of Si MOSFET. These excellent features of IGZO TFTs are conductive to proposals of LSI applications such as on-chip high-voltage I/Os, memories, processors and image sensors [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

P-16: Single-photon Avalanche Diode Array Integrated with InGaZnO Thin-film Transistors for Time-correlated Applications

Saito

Kimura

Miura

et al. 2016

SID Symposium Digest of Technical Papers

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Enhanced drivability of high-V<inf>bd</inf> dual-oxide-based complementary BEOL-FETs for compact on-chip pre-driver applications

Cited by 11 publications

References 0 publications

Film-profile-engineered ZnO thin-film transistor with gate/drain offset for high-voltage operation

Film-profile-engineered ZnO thin-film transistor with gate/drain offset for high-voltage operation

Emerging applications using metal-oxide semiconductor thin-film devices

P-16: Single-photon Avalanche Diode Array Integrated with InGaZnO Thin-film Transistors for Time-correlated Applications

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