Abstract:An inverted double channel Al0.25Ga0.75As/In0.25Ga0.75As/GaAs pseudomorphic high electron mobility transistor (P-HEMT) grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) has been demonstrated for the first time. The inverted double channel heterostructure shows a high two-dimensional electron gas (2-DEG) concentration of 4.53×1012 cm-2 along with a large mobility of 5010 cm2/V·s at 300 K, respectively. The fabricated P-HEMT device with a gate dimension of 1.8×200 µm2 shows a… Show more
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