Enhanced cubic optical nonlinearity of oligoazine derivatives

Exploring the influence of carboxylic acids on nonlinear optical (NLO) and dielectric properties of KDP crystal for applications of NLO facilitated photonic devices

“…The high magnitude of positive NLR evidences the higher Kerr lens modelocking (KLM) ability of doped KDP crystal which is desirable parameter for designing the components for laser alignment and shorter pulse generation systems [12]. The increased Kerr lensing effect in doped KDP crystals is enforced due to trafficking of p-conjugated electron cloud in large molecular orbitals, formed by the linear superposition of carbon P z atomic orbitals in presence of optical field [13,14], this might have been observed due to inclusion of dopants OA and MA in KDP. The doped KDP crystals with impressive positive nonlinear refraction are exclusively suitable for optical limiting and optical switching devices [15,16].…”

Nonlinear Optical Materials for the Smart Filtering of Optical Radiation

“…Hydrazine-based compounds 131 – 139 were also tested for NLO applications (Chart ). − For instance, 2,3-butanedione dihydrazone ( 131 ) upon irradiation with a Q-switched, frequency doubled Nd:YAG laser showed that η 2 and β increased linearly with increasing concentration. The ESA cross sections of 131 were found to be larger than the ground-state absorption cross section, thus leading to RSA due to sequential multiphoton absorption.…”

“…The ESA cross sections of 131 were found to be larger than the ground-state absorption cross section, thus leading to RSA due to sequential multiphoton absorption. Additionally, large positive third-order optical nonlinearity of the oligoazine derivatives 132 studied with Z -scan technique at 532 nm was found by the same group . The corresponding values of χ (3) were in the order of 10 –11 esu.…”

Inverse Spin Hall Effect in Electron Beam Evaporated Topological Insulator Bi2Se3 Thin Film

“…Devices based on spintronics have shown potential applications in the data storage devices, non‐volatile magnetic random‐access memory (MRAM), spin torque oscillators, magnonics, spin Hall magnetic sensor, spin orbit torque (SOT)‐induced magnetic switching, etc. Giant magnetoresistance (GMR)‐based devices utilized spin polarized current to switch the magnetization . After the experimental establishment of spin Hall effect in 2004, the attention of the research has been toward pure spin current conversion in ferromagnetic (FM)/non‐ferromagnetic metal (NM) heterostructures.…”

“…Giant magnetoresistance (GMR)-based devices utilized spin polarized current to switch the magnetization. [22][23][24] After the experimental establishment of spin Hall effect in 2004, [9,25,26] the attention of the research has been toward pure spin current conversion in ferromagnetic (FM)/non-ferromagnetic metal (NM) heterostructures. It is desired to have devices operated by small current density to become power efficient.…”