Enhanced Crystallization of Strontium Bismuth Tantalate Thin Films by Irradiation of Elongated Pulses of KrF Excimer Laser

Abstract

The lattice-strain problem around an interstitial C or N atom in martensitic iron was treated by an electronic theory. By using the DV-Xa cluster method, the local electronic structure near an interstitial atom was calculated self-consistently. The strong bond between Fe and C (or N) atoms was attributable to the Fe 3d-C (or N) 2s, 2p covalent interactions.The bond strength increased remarkably when the first neighbour Fe atoms are displaced away from a C (or N) atom along the c axis of martensite. A series of analyses on the bond order, orbital populations of atoms. ionicities and electron density distributions show that an interstitial atom tends to exist stably in a central site of the regular octahedron. six corners of which are occupied by iron atoms. This is approximately in agreement with Jack's classical model for the structural component of martensite.

A reliable approach to a rapid calculation of the grain size of polycrystalline thin films after excimer laser crystallization

“…[7][8][9][10][11][12][13][14][15][16][17] Numerous researches have been done for fabricating large-grained poly-Si thin films because the performance of TFTs is significantly affected by the size of the poly-Si thin films after ELC. [18][19][20][21][22][23] Until now, however, the grain size of the poly-Si thin films after ELC has usually been determined with a manual calculation. This approach included certain disadvantages such as human error and was time-consuming and exhausting.…”