2009
DOI: 10.1002/adma.200701309
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Enhanced Charge Separation by Sieve‐Layer Mediation in High‐Efficiency Inorganic‐Organic Solar Cells

Abstract: The introduction of a thin electronic sieve layer of a material with a wide bandgap, such as lithium fluoride (LiF) or silicon oxide (SiOx), at the inorganic‐organic interface of an organic photovoltaic device enhances the charge separation and improves the efficiency by more than an order to a maximum of 6.04%.

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Cited by 39 publications
(12 citation statements)
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“…Therefore, developing new methods to engineer the interfacial properties directly may offer effective pathways for the improvement of the performance of BHJ polymer solar cells. Such direct modification of the donor/acceptor interfaces has been reported previously in an organic/inorganic heterojunction solar cell, consisting of vacuum‐deposited Zn phthalocyanine (ZnPC) and n‐silicon bilayer,35 wherein a thin SiO x sieve layer of 0.9–2.9 nm thickness was inserted between the ZnPc(donor) and Si(acceptor), which efficiently blocked hole diffusion into the acceptor layer and thereby decreased carrier recombination 16, 35. It is not trivial to embed this type of passivation layer into the microscopic interfaces meandering through three‐dimensionally networked semiconducting polymer/PCBM domains by conventional layer‐by‐layer deposition processes as mentioned above.…”
supporting
confidence: 61%
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“…Therefore, developing new methods to engineer the interfacial properties directly may offer effective pathways for the improvement of the performance of BHJ polymer solar cells. Such direct modification of the donor/acceptor interfaces has been reported previously in an organic/inorganic heterojunction solar cell, consisting of vacuum‐deposited Zn phthalocyanine (ZnPC) and n‐silicon bilayer,35 wherein a thin SiO x sieve layer of 0.9–2.9 nm thickness was inserted between the ZnPc(donor) and Si(acceptor), which efficiently blocked hole diffusion into the acceptor layer and thereby decreased carrier recombination 16, 35. It is not trivial to embed this type of passivation layer into the microscopic interfaces meandering through three‐dimensionally networked semiconducting polymer/PCBM domains by conventional layer‐by‐layer deposition processes as mentioned above.…”
supporting
confidence: 61%
“…The Si 2p signals in the XPS correspond to the Si 3+ oxidation state, as indicated by the binding‐energy range of ≈101–104 eV ( Figure c) 46. Partially oxidized Si species have been known for their effective hole blocking and electron tunneling capabilities 35. An ultrathin SiO 2 layer was also utilized as a cathode passivation layer in the field of silicon‐based solar cells 47.…”
mentioning
confidence: 99%
“…Studies on interfaces are therefore attracting a great deal of attention. Several classes of materials, such as LiF, Cs 2 CO 3 , CsF, titanium chelate (TIPD, TOPD) and others [17][18][19] , have been used to improve PSC performance. However, devices based on these metallic salts need to be prepared by vacuum deposition, which limits their application in low-cost and large-area fabrication.…”
mentioning
confidence: 99%
“…If the Ag layer is too thin (<10 nm), it cannot form a continuous film, which may affect the carrier collection. Thus, similar to previous reports [26,30], a thickness of about 15-20 nm was usually used for semi-transparent metal in order to optimize the optical and electrical properties. The illumination of the active region can be estimated from the area (0. is shown.…”
Section: Methodsmentioning
confidence: 93%