2015
DOI: 10.1039/c4cp04902k
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Enhanced charge collection with ultrathin AlOxelectron blocking layer for hole-transporting material-free perovskite solar cell

Abstract: An ultrathin AlOx layer has been deposited onto a CH3NH3PbI3 film using atomic layer deposition technology, to construct a metal-insulator-semiconductor (MIS) back contact for the hole-transporting material-free perovskite solar cell. By optimization of the ALD deposition cycles, the average power conversion efficiency (PCE) of the cell has been enhanced from 8.61% to 10.07% with a highest PCE of 11.10%. It is revealed that the improvement in cell performance with this MIS back contact is mainly attributed to … Show more

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Cited by 50 publications
(27 citation statements)
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“…The small voids on the surface result in short circuits between the electrodes, decreased shunt resistance, and reduced device PCE. The considerable drop in Jsc of the co-sprayed device (run 10 m ) is perhaps due to the low thickness of the active layer and consequently the short diffusion length and poor photon harvesting efficiency [1, 19, 21, 22, 44, 45]. The optimization of the substrate vibration-assisted co-spray process is currently under further investigation, due to its simplicity and compatibility with large-scale fabrication of solution-processed solar cells.…”
Section: Resultsmentioning
confidence: 99%
“…The small voids on the surface result in short circuits between the electrodes, decreased shunt resistance, and reduced device PCE. The considerable drop in Jsc of the co-sprayed device (run 10 m ) is perhaps due to the low thickness of the active layer and consequently the short diffusion length and poor photon harvesting efficiency [1, 19, 21, 22, 44, 45]. The optimization of the substrate vibration-assisted co-spray process is currently under further investigation, due to its simplicity and compatibility with large-scale fabrication of solution-processed solar cells.…”
Section: Resultsmentioning
confidence: 99%
“…In views of decreasing materials cost and simplifying the cell structure, hole transporting material (HTM)-free PSCs are also developed [15][16][17][18][19][20][21]. With Au electrode, the PCE of the cell has already exceeded 10% by improving the perovskite film deposition and back contact, showing the promising prospect of HTM-free PSCs [18][19][20][21]. However, the noble mental Au counter electrode (CE) is still widely used in these high performance photovoltaic devices, which is derived from thermal evaporation under high vacuum condition, limiting its future application.…”
Section: Introductionmentioning
confidence: 99%
“…[ 49 ] When they inserted an ultrathin Al 2 O 3 fi lm between CH 3 NH 3 PbI 3 and Au to block electrons, they achieved an 11.1% PCE. [ 50 ] Two HTL-free cells with structures of ITO/CH 3 NH 3 PbI 3 /PC 61 BM/Bis-C 60 /Ag [ 51 ] and ITO/CH 3 NH 3 PbI 3 /C 60 /BCP/Ag [ 52 ] (BCP = 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) were reported, giving PCEs of 11.0% and 16.0%, respectively. Bis-C 60 and BCP were used to block holes and facilitate electron transport.…”
Section: Htl-free Cellsmentioning
confidence: 99%