Enhanced carrier separation in ferroelectric In₂Se₃/MoS₂ van der Waals heterostructure

Abstract

Enhanced carrier separation in ferroelectric In2Se3/MoS2 van der Waals heterostructure and external electric field effects.

Tuning the Schottky barrier height in a multiferroic In2Se3/Fe3GeTe2 van der Waals heterojunction

“…As In 2 Se 3 has different structural phases, we only study the most stable reported 19 phase, namely α-In 2 Se 3 . α-In 2 Se 3 belongs to the R3m space group with a hexagonal crystal structure.…”

“…The optimized lattice parameter of α-In 2 Se 3 is 4.10 Å which agrees with the previously reported values. 19 FGT possesses a hexagonal crystal structure. Each layer is composed of five sublayers with a sandwich-like stacking sequence.…”

“…It has been reported that the strain effects of less than 2% on electronic properties are minimal and can be neglected. 19 The Schottky barrier height (SBH) at the MS interface is the energy difference between the semiconductor band edges and the Fermi level in the heterojunction. It is defined by the following equations:…”

“…17,18 There have been several phases of In 2 Se 3 , but the α-phase has been revealed to be the most stable one and is a semiconductor in the monolayer form. 16,19 In nanoelectronic devices, α-In 2 Se 3 has to come into contact with the metallic electrodes. Thus, a Schottky barrier will be produced at the metal-semiconductor (MS) interface, which significantly affects the transport performance of nanoelectronic devices.…”

S‐Scheme Photocatalytic Mechanism of Type‐I Band Alignment in α‐In2Se3/g‐C3N4 Heterostructure

“…This amount of charge transfer is also within the range of previous studies (10 −1 –10 −3 e ). [ 34,37–41 ] The charge accumulation leads to an alteration in the built‐in electric field from the g‐C 3 N 4 monolayer to the α‐In 2 Se 3 monolayer. According to the parallel‐plate capacitor model described in Equation (4), the alteration of the built‐in electric field is of the order of 4.0 × 10 −3 V Å −1 (for configurations A/B).…”