Enhanced and retarded Ga self-diffusion in Si and Be doped GaAs isotope heterostructures

Bracht, H.; Norseng, M.S.; Häller, E. E.; Eberl, K.; Cardona, M.

doi:10.1016/s0038-1098(99)00376-2

Cited by 31 publications

(33 citation statements)

References 41 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Some calculation details are skipped in the manuscript, we refer the reader to Refs. [1,3] for further details on the model used.…”

Section: Analysis Of the Experimental Resultsmentioning

confidence: 99%

“…We show that, in spite of well known LDA limitations, apparently conflicting data coming from two experiments performed under different conditions [1,2] are well fitted. This satisfactory fit is obtained for both experimental data by using the same set of inputs like the concentration model, the Fermi level effect and the computed temperature dependence of F q1/q2 .…”

Section: Introductionmentioning

confidence: 81%

“…Both fitting procedures used by Gebauer et al [2] and Bracht et al [1] are based on the concentration model used previously by Tan and coworkers [3]. The Ga selfdiffusion coefficient D Ga is given by the sum of the transport coefficients of vacancies in various charge states q:…”

Section: A Concentration Modelmentioning

confidence: 99%

“…While experiments have deduced a preferred charge state ranging from −1 and −2 [1] to −3 [2,3] under N-type or intrinsic conditions, most (zero temperature) ab-initio calculations favor the −3 charge state for V Ga , see Ref. [4,5,6,7,8,9,10,11,12,13,14].…”

Section: Introductionmentioning

confidence: 99%

“…These entropic contributions can therefore alter the charge of the dominant species as calculated at T = 0, leading to a strong competition between the charge states. Moreover, the separate ionization energy for each state is not directly accessible experimentally; only the sum over the ionization free energies can be obtained by fitting the experimental data over a range of temperatures, using a number of assumptions typically inspired from ab-initio data [2,3] or set as free parameters in the fit [1].…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Thermally activated charge reversibility of gallium vacancies in GaAs

El-Mellouhi

Mousseau

2006

Journal of Applied Physics

View full text Add to dashboard Cite

The dominant charge state for the Ga vacancy in GaAs has been the subject of a long debate, with experiments proposing −1, −2 or −3 as the best answer. We revisit this problem using ab initio calculations to compute the effects of temperature on the Gibbs free energy of formation, and we find that the thermal dependence of the Fermi level and of the ionization levels lead to a reversal of the preferred charge state as the temperature increases. Calculating the concentrations of gallium vacancies based on these results, we reproduce two conflicting experimental measurements, showing that these can be understood from a single set of coherent LDA results when thermal effects are included.

show abstract

“…Some calculation details are skipped in the manuscript, we refer the reader to Refs. [1,3] for further details on the model used.…”

Section: Analysis Of the Experimental Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 81%

Section: A Concentration Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Thermally activated charge reversibility of gallium vacancies in GaAs

El-Mellouhi

Mousseau

2006

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

Isotopic Effects in the Phonon and Electron Dispersion Relations of Crystals

Cardona

2000

phys. stat. sol. (b)

Self Cite

View full text Add to dashboard Cite

During the past ten years, the relaxation of international tensions between East and West has resulted in the so‐called “peace dividends”. Among these dividends, solid state physicists have profited from the increasing availability of stable isotopes of many elements at affordable prices. These isotopes originate sometimes in the United States and sometimes in Russia. They can either be purchased or obtained “on loan” on the basis of scientific collaboration. With these isotopes, single crystals with tailor‐made isotopic compositions have been grown. Using these crystals, information on a number of rather basic physical properties has been obtained. We discuss in this review the following properties of such semiconductor crystals: 1. dependence of the lattice parameters on isotopic masses; 2. effect of isotopic disorder on thermal conductivity; 3. anharmonic effects on the phonon frequencies and linewidths and their dependence on isotopic mass; 4. effects of isotopic disorder on phonon frequencies and linewidhts; 5. renormalization of the energy of electronic states through electron–phonon interaction; and 6. self‐diffusion of atoms in crystals. Because of space limitations this discussion will not be exhaustive. We hope, however, to give sufficient references to published work so that the interested reader can easily find the primary literature sources to this rapidly expanding field of solid state physics. (A few multilingual short reviews are listed under [1].)

show abstract

Intrinsic Defects: Ionization Thermodynamics

Charged Semiconductor Defects

View full text Add to dashboard Cite

Enhanced and retarded Ga self-diffusion in Si and Be doped GaAs isotope heterostructures

Cited by 31 publications

References 41 publications

Thermally activated charge reversibility of gallium vacancies in GaAs

Thermally activated charge reversibility of gallium vacancies in GaAs

Isotopic Effects in the Phonon and Electron Dispersion Relations of Crystals

Intrinsic Defects: Ionization Thermodynamics

Contact Info

Product

Resources

About