Engineering Ultra-Low Work Function of Graphene

Yuan, Hongyuan; Chang, Shuai; Bargatin, Igor; Wang, Ning C.; Riley, Daniel C.; Wang, Haotian; Schwede, Jared; Provine, J.; Pop, Eric; Shen, Zhi‐Xun; Pianetta, P.; Melosh, Nicholas A.; Howe, Roger T.

doi:10.1021/acs.nanolett.5b01916

Cited by 88 publications

(57 citation statements)

References 43 publications

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“…Our TDDFT simulations are done following the time evolution of the Kohn–Sham orbitals (see Supplementary Note 2 for details) of the system defined by the constant velocity approach of a model pseudo-potential HCI (cutoff radius R =0.26 Å, Coulomb tail Q / r ) and a planar jellium disk with the correct work function value (4.6 eV)1347 representing the graphene layer. A non-uniform real space grid in cylindrical coordinates is used to treat properly the Coulomb singularity close to r = R .…”

Section: Methodsmentioning

confidence: 99%

Ultrafast electronic response of graphene to a strong and localized electric field

et al. 2016

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The way conduction electrons respond to ultrafast external perturbations in low dimensional materials is at the core of the design of future devices for (opto)electronics, photodetection and spintronics. Highly charged ions provide a tool for probing the electronic response of solids to extremely strong electric fields localized down to nanometre-sized areas. With ion transmission times in the order of femtoseconds, we can directly probe the local electronic dynamics of an ultrathin foil on this timescale. Here we report on the ability of freestanding single layer graphene to provide tens of electrons for charge neutralization of a slow highly charged ion within a few femtoseconds. With values higher than 1012 A cm−2, the resulting local current density in graphene exceeds previously measured breakdown currents by three orders of magnitude. Surprisingly, the passing ion does not tear nanometre-sized holes into the single layer graphene. We use time-dependent density functional theory to gain insight into the multielectron dynamics.

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Section: Methodsmentioning

confidence: 99%

Ultrafast electronic response of graphene to a strong and localized electric field

et al. 2016

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“…As a result of increasing the population of charge carriers in graphene, the Fermi level shifts from its equilibrium value [53]. Furthermore, electrostatic gating could be combined with other methods to result in ultralow WF materials for electron emission and energy conversion applications [89].…”

Section: Other Factors That Affect the Work Function Of Graphenementioning

confidence: 99%

“…of graphene. Doping graphene with alkali metals, along with other methods (such as electrostatic gating), could decrease the WF to 1 eV[89]. This low WF value was achieved for a large area of SLG deposited via CVD methods.…”

mentioning

confidence: 99%

Tuning the work function of graphene toward application as anode and cathode

Naghdi

Sánchez‐Arriaga

Rhee

2019

Journal of Alloys and Compounds

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The rapid technological progress in the 21 st century demands new multi-functional materials applicable to a wide variety of industries. Two-dimensional (2D) materials are predicted to have a revolutionary impact on the cost, size, weight, and functions of future electronic and optoelectronic devices. Graphene, which shows potential as an alternative to conventional conductive transparent metal oxides, may play a central role. Since its work function (WF) is tunable, graphene exhibits the interesting ability to serve two different roles in electronic and optoelectronic devices, both as an anode and a cathode.After introducing some basic concepts, this work reviews the most important advances in controlling the tuned WF of graphene, highlighting special features of graphene electronic band structure and recognizing different methods for measuring WF. The impact of thickness, type of contact, chemical doping, UV and plasma treatments, defects, and functional groups of graphene oxide are considered and related with the applications of the modulated material. The results of the review, organized in lookup tables, have been used to identify the advantages and main challenges of the tuning methods.

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“…87 Moreover, achieving ultra-low 21 work function in graphene is very important for electronics and electron emission devices. [89][90][91] As stanene and doped stanene have lower work function than graphene, they can be promising for electronic device technologies. 92 Thus, stanene can be used for photocatalytic application as an electron transfer channel for Z-scheme photocatalysis.…”

Section: Photocatalytic Propertiesmentioning

confidence: 99%

Band gap opening in stanene induced by patterned B–N doping

Garg

Choudhuri

Mahata

et al. 2017

Phys. Chem. Chem. Phys.

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Abstract:Stanene is a quantum spin hall insulator and a promising material for electronic and optoelectronic devices. Density functional theory (DFT) calculations are performed to study the band gap opening in stanene by elemental mono-(B, N) and co-doping (B-N). Different patterned B-N co-doping is studied to change the electronic properties in stanene. A patterned B-N co-doping opens the band gap in stanene and the semiconducting nature persists with strain. Molecular dynamics (MD) simulations are performed to confirm the thermal stability of such doped system. The stress-strain study indicates that such doped system is as stable as pure stanene. Our work function calculations show that stanene and doped stanene has lower work function than graphene and thus promising material for photocatalysis and electronic devices.

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Engineering Ultra-Low Work Function of Graphene

Cited by 88 publications

References 43 publications

Ultrafast electronic response of graphene to a strong and localized electric field

Ultrafast electronic response of graphene to a strong and localized electric field

Tuning the work function of graphene toward application as anode and cathode

Band gap opening in stanene induced by patterned B–N doping

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