2018
DOI: 10.1002/adma.201805360
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Engineering Transport in Manganites by Tuning Local Nonstoichiometry in Grain Boundaries

Abstract: Grain BoundariesPerovskite manganites with general formula RE 1−x B x MnO 3±δ (where RE stands for a trivalent rare-earth element and B for a divalent alkaline ion) have been extensively investigated for their wide variety of intriguing properties, such as oxygen electrocatalysis in solid oxide fuel cell (SOFC), [1,2] The ORCID identification number(s) for the author(s) of this article can be found under https://doi.

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Cited by 33 publications
(51 citation statements)
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References 59 publications
(92 reference statements)
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“…It must be noted here that the presence of high angle grain boundaries in the LSF20 thin film may locally modify the point defect concentration, as was previously found in other MIEC materials (see Section S3, Supporting Information, for the discussion about the effects of homogeneity of the thin films and its effects on the ellipsometric parameters). [ 9,35 ] Overall, it is possible to conclude that the deposited LSF layers provide a representative set of samples for the study of the defect chemistry in LSF thin films.…”
Section: Resultsmentioning
confidence: 99%
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“…It must be noted here that the presence of high angle grain boundaries in the LSF20 thin film may locally modify the point defect concentration, as was previously found in other MIEC materials (see Section S3, Supporting Information, for the discussion about the effects of homogeneity of the thin films and its effects on the ellipsometric parameters). [ 9,35 ] Overall, it is possible to conclude that the deposited LSF layers provide a representative set of samples for the study of the defect chemistry in LSF thin films.…”
Section: Resultsmentioning
confidence: 99%
“…[ 8 ] Besides, the presence of heterogeneous and homogenous interfaces in thin films was shown to drastically impact defect concentrations in such layers, which gives rise to deviations from bulk defect chemistry and, eventually, to new and unexpected properties. [ 9–11 ] Therefore, the knowledge and quantification of the chemical reactions that dominate the defect concentration in oxide thin films (i.e., defect chemistry) is essential for understanding the material behavior and for engineering their properties. This is especially relevant at intermediate‐to‐low temperatures (below 500 °C), where a high electrochemical activity and the nanometric dimensions of the thin films allow the point defect equilibrium with the environment, [ 12 ] hampering the use of the high temperature defect chemistry model from the bulk counterpart.…”
Section: Introductionmentioning
confidence: 99%
“…The VAN combines the excellent ionic conductivity of SDC with the great oxygen affinity of the LSM (typically hindered by its poor oxygen diffusivity) resulting in a perfect synergy that provides an ideal electrode material by design. 38 This job-sharing effect is further enhanced by the unique VAN microstructure, which is characterized by no tortuosity for mass transport and by maximized triple-phase boundary density (>10 6 cm•cm -2 , cf. Fig.…”
Section: Resultsmentioning
confidence: 99%
“…37 The VAN combines the excellent ionic conductivity of SDC with the great oxygen affinity of the LSM (typically hindered by its poor oxygen diffusivity) resulting in a perfect synergy that provides an ideal electrode material by design. 38 This job-sharing effect is further enhanced by the unique VAN microstructure, which is characterized by no tortuosity for mass transport and by maximized triple-phase boundary density (>10 6 cm•cm -2 , cf. Fig.…”
mentioning
confidence: 99%
“…fast grain boundary oxygen diffusion). 38 In order to quantify this qualitative picture, the measured diffusion profiles (integrated over the area between the dotted lines in (note that no information on the ion diffusivity is accessible by tracer method for SDC since these regions saturate owing to the very fast transport kinetics). Similar results on a different 2D cross-section are reported in Supplementary Figure 4.…”
mentioning
confidence: 99%