Engineering the optical properties of nickel sulphide thin films by zinc integration for photovoltaic applications
Junaid Younus,
Warda Shahzad,
Bushra Ismail
et al.
Abstract:Herein, zinc-doped NiS thin films with acceptable lateral homogeneity and an energy bandgap between 2.25 and 2.50 eV have been constructed. Our findings indicated that doping is a useful method for modifying the composition and characteristics of NiS thin films.
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