Engineering the electronic properties of silicene by tuning the composition of MoX
                    <sub>2</sub>
                    and GaX (X = S,Se,Te) chalchogenide templates

Scalise, Emilio; Houssa, Michel; Cinquanta, Eugenio; Grazianetti, Carlo; Broek, Bas van den; Pourtois, G.; Stesmans, André; Fanciulli, M.; Molle, Alessandro

doi:10.1088/2053-1583/1/1/011010

Cited by 58 publications

(68 citation statements)

References 27 publications

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“…TMDs can be also regarded as 2D building blocks to design multistacked van der Waals (vdW) heterostructures . From this viewpoint, the inherent vdW character of the interlayer coupling makes them attractive as ad hoc substrate for the epitaxy of artificially engineered 2D layers as recently outlined for the synthesis of graphene‐like silicon on nonmetallic substrates . Despite the lattice mismatch between the MoS 2 surface and the free‐standing silicene, we recently reported on the 2D epitaxy of highly buckled Si nanosheets on MoS 2 substrates with local hexagonal arrangement .…”

Section: Introductionmentioning

confidence: 99%

Electron Confinement at the Si/MoS₂ Heterosheet Interface

Molle¹,

Lamperti²,

Rotta

et al. 2016

Adv Materials Inter

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lead to a nontrivial electronic coupling at the Si/MoS 2 heterosheet (HS) interface with possible impact on the electronic and optical applications. Indeed, interfacing MoS 2 with conventional semiconductors recently has recently led to the realization of a subthermionic tunnel FET, [ 12 ] and it was proposed as a feasible avenue for an improved photodetection [ 13 ] and enhanced photoresponsive behavior. [ 14 ] In the present work, our aim is to unravel the electronic band line-up at the HS interface between Si and MoS 2 , and to correlate it with the electrical response of the resultant HS-FET after stabilizing the Si NS with an Al 2 O 3 encapsulation layer. To this purpose, in situ angle-resolved photoemission spectroscopy (ARPES) from a synchrotron radiation (SR) source (photon energy h ν = 100 eV) and in situ nonmonochromatic laboratory X-ray photoemission spectroscopy (XPS) from a Mg Kα (photon energy h ν = 1253.6 eV) source were respectively used to inspect the valence band structure at the Si/MoS 2 HS interface and the chemical stability prior to and after encapsulation. In particular, based on highresolution SR-PES, the Si NS is observed to bend the electronic bands of the MoS 2 topmost layers enough to cause an electron accumulation at the Si/MoS 2 HS interface. This feature deeply infl uences the HS-FET response by inducing an effective n -type doping in the topmost MoS 2 region. Structural Details of the Si/MoS 2 Heterosheet InterfaceThe fi rst Brillouin zone of the prepared MoS 2 (0001) surface (see the Experimental Section) is displayed by the low energy electron diffraction (LEED) pattern in Figure 1 a that reproduces a hexagonal reciprocal lattice cell. A similar LEED pattern has been observed in Figure 1 b after Si NS deposition at 200 °C. This fact is consistent with a pseudomorphic growth of an Si monolayer mimicking the MoS 2 surface structure as previously reported. [ 11 ] The growth of the Si NS has been chemically identifi ed by means of in situ XPS monitoring of the Si 2 p core level photoemission line as a function of the take-off angle (TOA), i.e., the angle between the photoelectron beam and the nominal surface plane. The angular dependence of the Si 2 p line is reported in Figure 1

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Section: Introductionmentioning

confidence: 99%

Electron Confinement at the Si/MoS₂ Heterosheet Interface

Molle¹,

Lamperti²,

Rotta

et al. 2016

Adv Materials Inter

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“…Some of the MX like GaS and GaSe are predicted to have weak interaction with silicene in theory. 34,35 Although MX seem promising as the suitable substrates for germanene, the interaction between them and germanene is yet to be investigated.…”

Section: Introductionmentioning

confidence: 99%

The electronic structure of quasi-free-standing germanene on monolayer MX (M = Ga, In; X = S, Se, Te)

Minamitani

Ando

et al. 2015

Phys. Chem. Chem. Phys.

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For the first time by using the ab initio density functional theory, the stability and electronic structures of germanene on monolayer GaS, GaSe, GaTe and InSe have been investigated. Germanene preserves its buckled-honeycomb structure on all the studied substrates similar to the free-standing case. Moreover, germanene stays neutral and preserves its Dirac-cone-like band structure on monolayer GaTe and InSe. In these two cases, a bandgap of 0.14-0.16 eV opens at the Dirac point of germanene, while the effective masses remain as small as 0.05-0.06 times the free-electron mass. The estimated carrier mobility is up to 2.2 × 10(5) cm(2) V(-1) s(-1). These features show that monolayer GaTe and InSe are promising as substrates for germanene devices.

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“…But the lattice mismatches (3.0–7.4%) between silicene ( a Si = 3.866 Å) and GaS/GaSe/GaTe ( a = 3.580 ∼ 4.100 Å) are smaller than that (17.7%) between silicene and MoS 2 ( a = 3.180 Å). The Dirac cone of silicene is kept on GaS/GaSe/GaTe substrate based on our and other DFT calculations . Therefore, GaS/GaSe/GaTe appears to be a proper substrate to grow silicene.…”

Section: Resultsmentioning

confidence: 86%

“…It appears that a proper substrate to grow silicene without destroying its Dirac cone should have a weak interaction and matched lattice constant. The interactions between silicene and group III monochalcogenide (G3MC) GaS/GaSe/GaTe are weak van de Waals force (e.g., E b = 0.126 eV per Si) and comparable with that ( E b = 0.2 eV per Si) between silicene and MoS 2 . But the lattice mismatches (3.0–7.4%) between silicene ( a Si = 3.866 Å) and GaS/GaSe/GaTe ( a = 3.580 ∼ 4.100 Å) are smaller than that (17.7%) between silicene and MoS 2 ( a = 3.180 Å).…”

Section: Resultsmentioning

confidence: 99%

All‐Metallic Vertical Transistors Based on Stacked Dirac Materials

Wang

Liu

et al. 2014

Adv Funct Materials

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It is a persisting pursuit to use metal as a channel material in a field effect transistor. All metallic transistor can be fabricated from pristine semimetallic Dirac materials (such as graphene, silicene, and germanene), but the on/off current ratio is very low. In a vertical heterostructure composed by two Dirac materials, the Dirac cones of the two materials survive the weak interlayer van der Waals interaction based on density functional theory method, and electron transport from the Dirac cone of one material to the one of the other material is therefore forbidden without assistance of phonon because of momentum mismatch.First-principles quantum transport simulations of the all-metallic vertical Dirac material heterostructure devices confirm the existence of a transport gap of over 0.4 eV, accompanied by a switching ratio of over 10 4 . Such a striking behavior is robust against the relative rotation between the two Dirac materials and can be extended to twisted bilayer graphene. Therefore, 2 all-metallic junction can be a semiconductor and novel avenue is opened up for Dirac material vertical structures in high-performance devices without opening their band gaps.

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Engineering the electronic properties of silicene by tuning the composition of MoX ₂ and GaX (X = S,Se,Te) chalchogenide templates

Cited by 58 publications

References 27 publications

Electron Confinement at the Si/MoS₂ Heterosheet Interface

Electron Confinement at the Si/MoS₂ Heterosheet Interface

The electronic structure of quasi-free-standing germanene on monolayer MX (M = Ga, In; X = S, Se, Te)

All‐Metallic Vertical Transistors Based on Stacked Dirac Materials

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Engineering the electronic properties of silicene by tuning the composition of MoX 2 and GaX (X = S,Se,Te) chalchogenide templates

Cited by 58 publications

References 27 publications

Electron Confinement at the Si/MoS2 Heterosheet Interface

Electron Confinement at the Si/MoS2 Heterosheet Interface

The electronic structure of quasi-free-standing germanene on monolayer MX (M = Ga, In; X = S, Se, Te)

All‐Metallic Vertical Transistors Based on Stacked Dirac Materials

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Product

Resources

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Engineering the electronic properties of silicene by tuning the composition of MoX ₂ and GaX (X = S,Se,Te) chalchogenide templates

Electron Confinement at the Si/MoS₂ Heterosheet Interface

Electron Confinement at the Si/MoS₂ Heterosheet Interface