Engineering the crystallinity of tin disulfide deposited at low temperatures

Ham, Giyul; Shin, Sunmi; Park, Joo Hyun; Lee, Juhyun; Choi, Hyun-Woong; Lee, Seungjin; Jeon, Hyeongtag

doi:10.1039/c6ra08169j

Cited by 35 publications

(41 citation statements)

References 28 publications

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“…X‐ray photoelectron spectroscopy (XPS) measurements of Sn 3d 5/2 (Figure e) and S 2p (Figure f) core‐levels showed features in agreement with previous reports on SnS 2 single crystals and ALD thin films with binding energies of 486.5 and 161.5 eV for the Sn 3d 5/2 and S 2p 3/2 peaks, respectively. The absence of notable SnO 2 component at 487.2 eV in the unsputtered, air‐exposed sample highlights the stability of the films toward oxidation.…”

Section: Resultssupporting

confidence: 90%

“…So far, only a single research group has deposited SnS 2 by ALD using Sn(NMe 2 ) 4 and H 2 S as precursors at 150 °C with improved film quality achieved through postdeposition annealing in S or H 2 S atmosphere. Nevertheless, many crucial features of film deposition, including conformality, uniformity, and thickness control have not been demonstrated for 2D SnS 2 films.…”

Section: Introductionmentioning

confidence: 99%

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Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS₂ Films

Mattinen

King

Khriachtchev

et al. 2018

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Semiconducting 2D materials, such as SnS , hold immense potential for many applications ranging from electronics to catalysis. However, deposition of few-layer SnS films has remained a great challenge. Herein, continuous wafer-scale 2D SnS films with accurately controlled thickness (2 to 10 monolayers) are realized by combining a new atomic layer deposition process with low-temperature (250 °C) postdeposition annealing. Uniform coating of large-area and 3D substrates is demonstrated owing to the unique self-limiting growth mechanism of atomic layer deposition. Detailed characterization confirms the 1T-type crystal structure and composition, smoothness, and continuity of the SnS films. A two-stage deposition process is also introduced to improve the texture of the films. Successful deposition of continuous, high-quality SnS films at low temperatures constitutes a crucial step toward various applications of 2D semiconductors.

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Section: Resultssupporting

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS₂ Films

Mattinen

King

Khriachtchev

et al. 2018

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“…In addition, we conducted post-deposition annealing to improve the crystallinity of SnS 2 with an H 2 S and Ar gas mixture. As previously reported, 20 the crystallinity of 2D materials was improved by post deposition annealing with sulfur powder. However, the annealing process with sulfur powder has fundamental issues because the temperature at which the sulfur powder can be vaporized is over 120 • C. Moreover, most sulfur vapor has a S 8 ring structure below 500 • C, which results in a non-uniform reaction.…”

Section: Introductionsupporting

confidence: 73%

“…In addition, the FWHM value of SnS 2 annealed at 350 • C is larger than that at 300 • C, which is attributed to re-evaporation or reduction at the SnS 2 surface. 20 Thus, it is assumed that initiating the annealing process at a low temperature (250 • C) can stabilize the surface of SnS 2 to prevent re-evaporation or reduction. The FIG.…”

Section: Resultsmentioning

confidence: 99%

Characteristics of layered tin disulfide deposited by atomic layer deposition with H2S annealing

et al. 2017

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Tin disulfide (SnS2) has attracted much attention as a two-dimensional (2D) material. A high-quality, low-temperature process for producing 2D materials is required for future electronic devices. Here, we investigate tin disulfide (SnS2) layers deposited via atomic layer deposition (ALD) using tetrakis(dimethylamino)tin (TDMASn) as a Sn precursor and H2S gas as a sulfur source at low temperature (150° C). The crystallinity of SnS2 was improved by H2S gas annealing. We carried out H2S gas annealing at various conditions (250° C, 300° C, 350° C, and using a three-step method). Angle-resolved X-ray photoelectron spectroscopy (ARXPS) results revealed the valence state corresponding to Sn4+ and S2- in the SnS2 annealed with H2S gas. The SnS2 annealed with H2S gas had a hexagonal structure, as measured via X-ray diffraction (XRD) and the clearly out-of-plane (A1g) mode in Raman spectroscopy. The crystallinity of SnS2 was improved after H2S annealing and was confirmed using the XRD full-width at half-maximum (FWHM). In addition, high-resolution transmission electron microscopy (HR-TEM) images indicated a clear layered structure.

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“…deposited SnS 2 films by atomic layer deposition and effect of post annealing temperature on the crystallinity was investigated. Even though all the films were crystalline with hexagonal structure of SnS 2 , the as prepared sample presented comparatively broader and less intensity peak at 14.9° corresponding to (001) plane . SnS 2 nanoflakes prepared by heating SnS 2 : H 2 O and excess sulfur powders in air at 200–240 °C also present similar XRD patterns with hexagonal structure of SnS 2 .…”

Section: Resultsmentioning

confidence: 83%

Nanostructured SnS₂ Thin Films from Laser Ablated Nanocolloids: Structure, Morphology, Optoelectronic and Electrochemical Properties

et al. 2018

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Tin disulfide (SnS ) is a binary chalcogenide semiconductor having applications in solar cells, energy storage, and optoelectronics. SnS thin films were deposited by spraying the nanocolloids synthesized by pulsed laser ablation in liquid. The structure, morphology, and optoelectronic properties were studied for films obtained from two liquid media (ethanol and isopropanol) and after heat treatments at various temperatures. X-ray diffraction analysis confirmed the hexagonal crystal structure of the films, whereas the 2-H polytype structure was identified by micro-Raman spectroscopy. Oxidation states of Sn (4+) and S (2-) identified from high resolution X-ray photoelectron spectra confirmed the composition and chemical states of the films. The SnS thin films exhibited distinct porous surface morphologies as the liquid medium in laser ablation was varied. All as-prepared and annealed films showed photoluminescence with a high intensity peak at 485 nm and a low intensity peak at 545 nm. Thin films annealed at 300 °C showed improved electrochemical properties upon illumination using a blue LED light source. Current-voltage curves recorded in dark and light as well as the photoresponse measurements showed their suitability for utilization in optoelectronic devices. The results of this study may trigger further research towards fabrication of nanostructured thin films in large area for optoelectronic and photoelectrochemical applications in an environment friendly and cost-effective way.

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Engineering the crystallinity of tin disulfide deposited at low temperatures

Abstract: We report here that SnS2 films deposited at 150 °C and annealed at below 350 °C have good potential for using 2D SnS2 in flexible electronic devices.

Cited by 35 publications

References 28 publications

Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS₂ Films

Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS₂ Films

Characteristics of layered tin disulfide deposited by atomic layer deposition with H2S annealing

Nanostructured SnS₂ Thin Films from Laser Ablated Nanocolloids: Structure, Morphology, Optoelectronic and Electrochemical Properties

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Engineering the crystallinity of tin disulfide deposited at low temperatures

Abstract: We report here that SnS2 films deposited at 150 °C and annealed at below 350 °C have good potential for using 2D SnS2 in flexible electronic devices.

Cited by 35 publications

References 28 publications

Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS2 Films

Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS2 Films

Characteristics of layered tin disulfide deposited by atomic layer deposition with H2S annealing

Nanostructured SnS2 Thin Films from Laser Ablated Nanocolloids: Structure, Morphology, Optoelectronic and Electrochemical Properties

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Product

Resources

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Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS₂ Films

Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS₂ Films

Nanostructured SnS₂ Thin Films from Laser Ablated Nanocolloids: Structure, Morphology, Optoelectronic and Electrochemical Properties