2020
DOI: 10.1364/oe.397377
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Engineering telecom single-photon emitters in silicon for scalable quantum photonics

Abstract: We create and isolate single-photon emitters with a high brightness approaching 10 5 counts per second in commercial silicon-on-insulator (SOI) wafers. The emission occurs in the infrared spectral range with a spectrally narrow zero phonon line in the telecom O-band and shows a high photostability even after days of continuous operation. The origin of the emitters is attributed to one of the carbon-related color centers in silicon, the so-called G center, allowing purification with the 12 C and 28 Si isotopes.… Show more

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Cited by 59 publications
(65 citation statements)
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“…The W and G centers exhibit some of the brightest emission of any SECs, and are promising as SPSs. In the past year, first measurements of single-photon emission from G centers have been reported [116,117], and single SECs across the telecom wavelength range have also been observed in carbon-implanted silicon [118]. A silicon photonic spin-donor qubit quantum computing platform has recently been proposed [119], with the idea of using photonic coupling between chalcogenide spin qubits in silicon (figure 17(ii)).…”
Section: Statusmentioning
confidence: 99%
“…The W and G centers exhibit some of the brightest emission of any SECs, and are promising as SPSs. In the past year, first measurements of single-photon emission from G centers have been reported [116,117], and single SECs across the telecom wavelength range have also been observed in carbon-implanted silicon [118]. A silicon photonic spin-donor qubit quantum computing platform has recently been proposed [119], with the idea of using photonic coupling between chalcogenide spin qubits in silicon (figure 17(ii)).…”
Section: Statusmentioning
confidence: 99%
“…Several silicon point defects typically quenched at room-temperature emerge as narrow-linewidth candidates for light sources in the telecommunications band (Davies, 1989;Sumikura et al, 2014;Buckley et al, 2017;Beaufils et al, 2018;Chartrand et al, 2018). While single-photon emission (Bergeron et al, 2020;Hollenback et al, 2020;Redjem et al, 2020) is not the objective in the present context, the narrow linewidth is also attractive for further efficiency gains via the Purcell Effect (Romeira and Fiore, 2018). LEDs have already been demonstrated with the W-center defect (Bao et al, 2007;Buckley et al, 2017), albeit with poor (10 −6 ) efficiencies, limited by electrical injection efficiency rather than emitter lifetime.…”
Section: Integrated Light Sourcesmentioning
confidence: 99%
“…Silicon has recently been proven to be instrumental for hosting sources of single-photons emitting in the strategic optical telecommunication O-band (1260-1360 nm) [3][4][5]. The origin of the telecom single-photon emitters is a carbon-irradiation induced damage center in silicon, the so-called G-center [6,7].…”
Section: Introductionmentioning
confidence: 99%
“…The origin of the telecom single-photon emitters is a carbon-irradiation induced damage center in silicon, the so-called G-center [6,7]. These single-photon emitters are created at sufficiently low carbon concentrations, whereby two or more of the G center defects do not interact with each other [3]. The scalability, brightness, purity and collection efficiency of these single-photon emitters are key issues in bringing them closer to practical applications.…”
Section: Introductionmentioning
confidence: 99%