Engineering Parallel and Perpendicular Polarized Photoluminescence from a Single Semiconductor Nanowire by Crystal Phase Control

Hoang, Thang B.; Moses, A F; Ahtapodov, Lyubomir; Zhou, Hailong; Dheeraj, Dasa L.; Helvoort, Antonius T. J. van; Fimland, B. O.; Weman, H.

doi:10.1021/nl101087e

Cited by 60 publications

(64 citation statements)

References 23 publications

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“…However the degree of polarization was not 100% since the optical 43 | P a g e antenna effect in the thin NWs favors the parallel polarization restricting attainable polarization degrees. These results were afterwards confirmed for other material systems [81]- [83].…”

Section: Experimental Observationssupporting

confidence: 61%

Micro-photoluminescence and micro-Raman spectroscopy of novel semiconductor nanostructures

Filippov¹

2016

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Abstract.Low-dimensional semiconductor structures, such as one-dimensional nanowires (NWs) and zero-dimensional quantum dots (QDs), are materials with novel fundamental physical properties and a great potential for a wide range of nanoscale device applications. Here, especially promising are direct bandgap II-VI and III-V compounds and related alloys with a broad selection of compositions and band structures. For examples, NWs based on dilute nitride alloys, i.e. GaNAs and GaNP, provide both an optical active medium and well-shaped cavity and, therefore, can be used in a variety of advanced optoelectronic devices including intermediate band solar cells and efficient light-emitters. Self-assembled InAs QDs formed in the GaAs matrix are proposed as building blocks for entangled photon sources for quantum cryptography and quantum information processing as well as for spin light emitting devices. ZnO NWs can be utilized in a variety of applications including efficient UV lasers and gas sensors. In order to fully explore advantages of nanostructured materials, their electronic properties and lattice structure need to be comprehensively characterized and fully understood, which is not yet achieved in the case of aforementioned material systems. The research work presented this thesis addresses a selection of open issues via comprehensive optical characterization of individual nanostructures using micro-Raman (-Raman) and microphotoluminescence (-PL) spectroscopies.In paper 1 we study polarization properties of individual GaNP and GaP/GaNP core/shell NWs using polarization resolved µ-PL spectroscopy. Near band-edge emission in these structures is found to be strongly polarized (up to 60% at 150K) in the orthogonal direction to the NW axis, in spite of their zinc blende (ZB) structure. This polarization response, which is unusual for ZB NWs, is attributed to the local strain in the vicinity of the N-related centers participating in the radiative recombination and to their preferential alignment along the growth direction, presumably caused by the presence of planar defects. Our findings therefore show that defect engineering via alloying with nitrogen provides an additional degree of freedom to control the polarization anisotropy of III-V nanowires, advantageous for their applications as a nanoscale source of polarized light.Structural and optical properties of novel coaxial GaAs/Ga(N)As NWs grown on Si II substrates, were evaluated in papers 2-4. In paper 2 we show by using -Raman spectroscopy that, though nitrogen incorporation shortens a phonon correlation length, the GaNAs shell with [N]<0.6% has a low degree of alloy disorder and weak residual strain.Additionally, Raman scattering by the GaAs-like and GaN-like phonons is found to be enhanced when the excitation energy approaches the E + transition energy. This effect was attributed the involvement of intermediate states that were created by N-related clusters in proximity to the E + subband. Recombination processes in these structures were studied in paper 3 by ...

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Section: Experimental Observationssupporting

confidence: 61%

Micro-photoluminescence and micro-Raman spectroscopy of novel semiconductor nanostructures

Filippov¹

2016

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“…In addition to the differences in the bandgap, the linear polarization of the PL emission was found to be strongly dependent on the crystal phase of the NWs. The PL emission from a ZB NW was reported to be polarized along the NW axis, while from a WZ NW the emission is perpendicular to the NW axis [118,119]. Issues regarding the exact bandgap of WZ GaAs, band offset at the ZB-WZ interface, effective masses of carriers, etc.…”

Section: Extended Defectsmentioning

confidence: 99%

Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography

et al. 2014

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This thesis deals with the growth of GaAs nanowires (NWs) by molecular beam epitaxy (MBE) using vapor-liquid-solid method on various substrates including GaAs(111)B, Si(111) and graphene. The growth of the NWs on GaAs substrates was carried out by Au-catalyzed technique, whereas the growths on Si and graphene substrates were carried out using self-catalyzed technique that has been the main focus of this thesis. The long-term goal of this work was to produce p-n radial junction GaAs NWs for solar cell applications.Necessary conditions were established for obtaining vertical self-catalyzed GaAs NWs on Si(111), which is reproducible from run-to-run. One of the major issues in these NWs grown by both Au-and self-catalyzed techniques is their crystal structure. The Au-catalyzed GaAs NWs usually adopt a wurtzite (WZ) crystal phase, whereas the self-catalyzed NWs a zinc blende (ZB) phase. However, in both the cases the NWs contain stacking faults, rotational twins or/and a mixed crystal phase. The ZB and WZ phases show different optical properties, and one phase might be favored over other for certain applications. Therefore the crystal phase was controlled within single NWs by tuning the V/III ratio and introducing GaAsSb inserts. The change of the crystal phases was correlated with the change in the contact angle of the Ga droplet.Since the discovery of graphene, an ultra-thin two-dimensional material, the research on graphene has become an active field in recent years due to its remarkable properties including excellent electrical and thermal conductivities, mechanical strength and flexibility, and optical transparency. By growing the semiconductor NWs on graphene, a completely new hybrid system can be envisioned where the unique properties of both NWs and graphene can be utilized. Therefore we established a method for the growth of semiconductor NWs on graphene by demonstrating epitaxial growth of vertical GaAs and InAs NWs on different graphitic substrates.Core-shell heterostructure, doping, optical properties, and position controlled growth of self-catalyzed GaAs NWs were investigated. Growth of GaAs/GaAsSb coreshell NWs where the Sb content was tuned from about 10% -70% was studied. The effect of growth temperature and the Sb flux on the morphology of GaAsSb shell was investigated. In addition, by utilizing the core-shell geometry where the shell copies the crystal phase of the core, WZ phase of GaAsSb was demonstrated. Successful p-type doping of GaAs core using Be as dopant, and n-type doping of GaAs shell using Si and Te as dopants were achieved. To investigate the optical properties, GaAs/AlGaAs coreshell NWs were grown with different V/III ratios during the core growth. The NWs grown with high V/III ratio, despite containing a higher density of twinned ZB and WZ GaAs with SFs, were found to have superior optical quality as compared to the NWs grown with low V/III ratio that contain pure ZB GaAs. The observed V/III ratio dependent optical quality was correlated to the intrinsic defects such as As vac...

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“…Similar results have been published recently on GaAs nanowires with predominant wurtzite structure but with the presence of thin zinc-blende segments. 27 In the following, we present a detailed temperature study of the polarization behavior of selected emission lines from the spectrum presented in Fig. 4(a).…”

Section: B Nanowires With Intermittent Zinc-blende/wurtzite Structurementioning

confidence: 99%

“…8,26 Only recently, however, the symmetry and energy structure of the valence band of such zinc-blende/wurtzite polytypic structures was measured experimentally in InP and heterostructured GaAs/GaAsSb NWs using polarization-dependent PL and (or) PL excitation spectroscopy. 5,21,22,27 In this paper, we study the symmetry and energy structure of the exciton bands in GaAs NWs with zinc-blende structure as well as polytypic GaAs NWs with mixed zinc-blende/wurtzite structure by measuring the PL polarization properties at different temperatures. In the first case, the PL is connected with recombination of weakly confined excitons in zinc-blende GaAs NWs, while in the later case, the PL is represented by multiple lines connected with an indirect electron-hole pair recombination at the zinc-blende/wurtzite heterointerfaces.…”

Section: Introductionmentioning

confidence: 99%

Valence band structure of polytypic zinc-blende/wurtzite GaAs nanowires probed by polarization-dependent photoluminescence

et al. 2012

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We conducted temperature-dependent measurements of the photoluminescence (PL) polarization on GaAs nanowires (NWs) with polytypic zinc-blende/wurtzite structure in order to probe the symmetry and energy structure of the valence band in the wurtzite segments of the NWs. The low-temperature measurements revealed that in most of the investigated cases, the ground level of the interface excitons responsible for the PL is formed by the heavy hole. To describe the observed temperature dependence of the degree of PL polarization, we developed a theoretical model that allows an estimation of the splitting between the heavy hole and light hole exciton subbands in these NWs. This splitting is smaller than expected in pure wurtzite on the basis of recent first-principles calculations, which may be attributed to the multiple twinned nature of the wurtzite sections, which effectively behave as a polytype of lower hexagonality.

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Engineering Parallel and Perpendicular Polarized Photoluminescence from a Single Semiconductor Nanowire by Crystal Phase Control

Cited by 60 publications

References 23 publications

Micro-photoluminescence and micro-Raman spectroscopy of novel semiconductor nanostructures

Micro-photoluminescence and micro-Raman spectroscopy of novel semiconductor nanostructures

Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography

Valence band structure of polytypic zinc-blende/wurtzite GaAs nanowires probed by polarization-dependent photoluminescence

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