Engineering of sub-band in CuGaS2 thin films via Mo doping by chemical spray pyrolysis route

Logu, T.; Ahsan, Nazmul; Kalainathan, S.; Kim, Myeongok; Sethuraman, K.; Okada, Yoshitaka

doi:10.1016/j.tsf.2020.138252

Cited by 22 publications

(7 citation statements)

References 51 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Copper gallium sulfide telluride (CGST), a quaternary element from the chalcogenide family, 16,17 possesses a wide bandgap of 2.63 eV and a high absorption coefficient, which make it an excellent host material for intermediate band solar cells (IBSCs). 18,19 The viability of the IBSC concept has been confirmed using calculations of electronic band structures based on fundamental principles. Various theoretical investigations have explored the deposition of transition metals on chalcogenides for solar photovoltaics, including Ti-CuGaS 2 , Mn-CuGaS 2 , and Cr-CuGaS 2 as intermediate band (IB) 20,21 materials by partially substituting dopants for gallium (Ga).…”

Section: Introductionmentioning

confidence: 96%

Hierarchically structured sub-bands in chalcopyrite thin-film solar cell devices

Vijayan,

Thirumalaisamy,

Vijayachamundeeswari

et al. 2023

New J. Chem.

Self Cite

View full text Add to dashboard Cite

show abstract

Section: Introductionmentioning

confidence: 96%

Hierarchically structured sub-bands in chalcopyrite thin-film solar cell devices

Vijayan,

Thirumalaisamy,

Vijayachamundeeswari

et al. 2023

New J. Chem.

Self Cite

View full text Add to dashboard Cite

show abstract

“…As an additional development, CuGa 1Àx Fe x S 2 thin films have been successfully created as light-absorbing layers, exhibiting potential for IBSC applications. [10][11][12][13][14] Despite the structural similarity of CuGaSe 2 to Cu(In,Ga)Se 2 (CIGS) and its strong stability, it is not commonly utilized as an absorption layer in single-junction solar cells. Nonetheless, there are scarcity of reports and theoretical investigations concerning the use of CuGaSe 2 as a host material for the IB in IBSCs.…”

Section: Introductionmentioning

confidence: 99%

Development of Sub‐Band in Spray‐Deposited Cr‐Substituted Chalcopyrite Thin Films for Advancing Solar Cell Efficiency

Vijayan,

Thirumalaisamy,

Vijayachamundeeswari

et al. 2024

Energy Tech

Self Cite

View full text Add to dashboard Cite

Designing effective strategies for mitigating energy crisis highlights a research gap in current solar cell technologies. This study explores the inherent physicochemical properties of thin films composed of copper gallium sulfide telluride (CuGa1−xCrx(S,Te)2) with chromium substitution, prepared through the chemical spray pyrolysis technique. The investigation showcases how the concept of intermediate band structuring contributes to enhancing solar cell efficiency. This enhancement can be attributed to the remarkable mobility (from 1.80 to 5.48 cm2 V−1 s−1) and conductivity (from 1.00 to 6.06 S cm−1) exhibited by pure and 0.1 chromium thin films, respectively. Notably, the Cr‐0.1‐substituted CGST film displays maximum photoresponsivity of 0.624 AW−1, an external quantum efficiency of 145%, and a detectivity of 2.37E10. The fabricated solar cell is subjected to theoretical simulation using solar cell capacitance simulator‐1D software, revealing an upward trend in efficiency from 7.13% to 11.23% with increasing Cr substitution from 0.025 to 0.1. This efficiency improvement can be ascribed to the reduction in bandgap (from 2.40 to 1.72 eV) and the creation of a sub‐band in CGST due to Cr incorporation, as substantiated by UV–vis and NIR spectroscopy. These outcomes suggest that Cr‐0.1‐substituted CGST holds promise as a potential thin film absorber material in solar photovoltaics.

show abstract

“…IB solar cells have increased attention owing to their higher efficiency by developing the impurity energy levels between the valence and conduction bands, which absorb lower energy photons. About 63.1% of maximum theoretical efficiency was estimated for the intermediate band solar cell (IBSC) under one sunlight energy. , In the IB solar cells, the material that possesses the IB is placed amid the n-type and p-type semiconductors, as shown in Figure . For such material, the sub-bandgap energy photons are captured by the transitions from the valence band (VB) to the IB and then from the IB to the conduction band (CB).…”

Section: Introductionmentioning

confidence: 99%

“…The electrons can be excited not just by a single high-energy photon but can also be made likely by two low-energy photons. Since the above-described process occurs in addition to the usual pushing of electrons from the VB to the CB by photons with energy much higher than that of the band gap, the photocurrent generated by the solar cell could be more than that in the case of a conventional type . Gaur et al attempted to create an IB gap in CuAlS 2 to improve its absorption in visible light and power conversion efficiency for solar cell applications.…”

Section: Introductionmentioning

confidence: 99%

A Novel Approach for Designing a Sub-Bandgap in CuGa(S,Te)₂ Thin Films Assisted with Numerical Simulation of Solar Cell Devices for Photovoltaic Application

et al. 2023

Self Cite

View full text Add to dashboard Cite

As a well-explored chalcopyrite material, copper gallium sulfide CGS has been considered a potential material for solar cell absorber layers. However, its photovoltaic attributes still require to be improved. In this research, a novel chalcopyrite material, copper gallium sulfide telluride CGST, has been deposited and verified as a thin film absorber layer to fabricate high-efficiency solar cells by experimental testing and numerical simulations. The results display the intermediate band formation in CGST with incorporation of Fe ions. Electrical studies showed enhancement in mobility from 1.181 to 1.473 cm2 V–1 s–1 and conductivity from 2.182 to 5.952 S cm–1 for pure and 0.08 Fe-substituted thin films. The I–V curves display the photoresponse and ohmic nature of the deposited thin films, and the maximum photoresponsivity (0.109 A W–1) was observed for 0.08 Fe-substituted films. Theoretical simulation of the prepared solar cells was carried out using SCAPS-1D software, and the obtained efficiency displayed an increasing trend from 6.14 to 11.07% as the Fe concentration increased from 0.0 to 0.08. This variation in efficiency is attributed to the decrease in bandgap (2.51–1.94 eV) and the formation of an intermediate band in CGST with Fe substitution, which is evidenced in UV–vis spectroscopy. The above revealed results open the way to 0.08 Fe-substituted CGST as a promising candidate as a thin film absorber layer in solar photovoltaic technology.

show abstract

Engineering of sub-band in CuGaS2 thin films via Mo doping by chemical spray pyrolysis route

Cited by 22 publications

References 51 publications

Hierarchically structured sub-bands in chalcopyrite thin-film solar cell devices

Hierarchically structured sub-bands in chalcopyrite thin-film solar cell devices

Development of Sub‐Band in Spray‐Deposited Cr‐Substituted Chalcopyrite Thin Films for Advancing Solar Cell Efficiency

A Novel Approach for Designing a Sub-Bandgap in CuGa(S,Te)₂ Thin Films Assisted with Numerical Simulation of Solar Cell Devices for Photovoltaic Application

Contact Info

Product

Resources

About

Engineering of sub-band in CuGaS2 thin films via Mo doping by chemical spray pyrolysis route

Cited by 22 publications

References 51 publications

Hierarchically structured sub-bands in chalcopyrite thin-film solar cell devices

Hierarchically structured sub-bands in chalcopyrite thin-film solar cell devices

Development of Sub‐Band in Spray‐Deposited Cr‐Substituted Chalcopyrite Thin Films for Advancing Solar Cell Efficiency

A Novel Approach for Designing a Sub-Bandgap in CuGa(S,Te)2 Thin Films Assisted with Numerical Simulation of Solar Cell Devices for Photovoltaic Application

Contact Info

Product

Resources

About

A Novel Approach for Designing a Sub-Bandgap in CuGa(S,Te)₂ Thin Films Assisted with Numerical Simulation of Solar Cell Devices for Photovoltaic Application