Engineering of atomic layer deposition process for titanium-aluminum-oxide based resistively switching medium

Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications—Effects of Precursor and Operating Conditions

“…In the current work, we present a comparison between two different precursors, namely TDMA-Ti and TiCl 4 , for ALD of TiO x using different deposition and post-annealing process conditions. Furthermore, the effect of introducing aluminium oxide (AlO y ) in the stack with TiO x was investigated as aluminium oxide is widely applied not only as a passivation [ 23 ] layer but also as a tandem layer with other metal oxides [ 23 , 32 ] to improve the electronic properties of metal oxides such as resistance [ 33 ]. Electronic and crystalline properties of the deposited TiO x and TiO x /AlO y layers obtained in the current work were analysed using a range of techniques such as microwave photo-conductance decay (µ-PCD), four-point sheet resistance probe, and transmission electron microscopy (TEM).…”