Engineering light emission of two-dimensional materials in both the weak and strong coupling regimes

Brotons‐Gisbert, Mauro; Martínez‐Pastor, Juan P.; Ballesteros, G. C.; Gerardot, Brian D.; Sánchez-Royo, Juan F.

doi:10.1515/nanoph-2017-0041

Cited by 24 publications

(27 citation statements)

References 63 publications

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“…When combined with other photonic devices, the proposed system can thus be used for ultrafast control of arbitrarily designed electromagnetic fields. This flexibility is especially valuable when integrating this system with architectures that possess a welldefined dipole moment, such as 2D materials 39 , plasmonic nanostructures 40 or single emitters 41 . Our approach proves that we can design at will a tailorable pumping channel and thus a tunable probe signal modulation, which is not easily achievable in natural ENZ materials, where only doping can shift the ENZ point.…”

Section: Discussionmentioning

confidence: 99%

Ultrafast all-optical switching enabled by epsilon-near-zero-tailored absorption in metal-insulator nanocavities

et al. 2020

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Ultrafast control of light−matter interactions is fundamental in view of new technological frontiers of information processing. However, conventional optical elements are either static or feature switching speeds that are extremely low with respect to the time scales at which it is possible to control light. Here, we exploit the artificial epsilon-near-zero (ENZ) modes of a metal-insulator-metal nanocavity to tailor the linear photon absorption of our system and realize a nondegenerate all-optical ultrafast modulation of the reflectance at a specific wavelength. Optical pumping of the system at its high energy ENZ mode leads to a strong redshift of the low energy mode because of the transient increase of the local dielectric function, which leads to a sub-3-ps control of the reflectance at a specific wavelength with a relative modulation depth approaching 120%.

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Section: Discussionmentioning

confidence: 99%

Ultrafast all-optical switching enabled by epsilon-near-zero-tailored absorption in metal-insulator nanocavities

et al. 2020

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“…Unfortunately, those experiments do not allow unambiguous observation of the OP dipole orientation. The strong effects of strain 42 and dielectric-induced luminescence enhancement 43,44 arise, which can be competing explanations. More importantly, the concept behind these works does not allow a quantitative determination of the exact dipole orientation.…”

Section: Introductionmentioning

confidence: 99%

Out-of-plane orientation of luminescent excitons in two-dimensional indium selenide

et al. 2019

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Van der Waals materials offer a wide range of atomic layers with unique properties that can be easily combined to engineer novel electronic and photonic devices. A missing ingredient of the van der Waals platform is a two-dimensional crystal with naturally occurring out-of-plane luminescent dipole orientation. Here we measure the far-field photoluminescence intensity distribution of bulk InSe and two-dimensional InSe, WSe 2 and MoSe 2 . We demonstrate, with the support of ab-initio calculations, that layered InSe flakes sustain luminescent excitons with an intrinsic out-of-plane orientation, in contrast with the in-plane orientation of dipoles we find in two-dimensional WSe 2 and MoSe 2 at room-temperature. These results, combined with the high tunability of the optical response and outstanding transport properties, position layered InSe as a promising semiconductor for novel optoelectronic devices, in particular for hybrid integrated photonic chips which exploit the out-of-plane dipole orientation.

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“…TMDC materials have usually been prepared on SiO 2 /Si wafers by mechanical exfoliation from the bulk or thin film deposition for physical characterization and device fabrication. After TMDC sample preparation, Raman and photoluminescence (PL) spectroscopic measurements are usually performed to identify the thickness and bandgap of the sample . The optical absorption and emission signals of the sample become larger as the electric field (E‐field) intensity of the incident light in the sample increases.…”

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confidence: 99%

“…Insertion of a subwavelength‐thick dielectric layer between TMDC and metal back‐reflecting layers could weaken the interaction between electrons in the TMDC and metal layers . Furthermore, such dielectric thin films could still increase the absorption and resulting PL generation of TMDC layers . Usually, it is difficult to obtain very smooth interfaces in dielectric/metal multilayer structures.…”

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confidence: 99%

Interference‐Enhanced Broadband Absorption of Monolayer MoS₂ on Sub‐100 nm Thick SiO₂/Si Substrates: Reflection and Transmission Phase Changes at Interfaces

Kim

Cho

Kim

et al. 2018

Adv Materials Inter

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bandgap energy of TMDCs is in the visible range, and thus intensive research efforts have been devoted to realize highefficiency TMDC-based optoelectronic devices. [1][2][3][4][5][6][7] TMDC materials have usually been prepared on SiO 2 /Si wafers by mechanical exfoliation from the bulk or thin film deposition for physical characterization and device fabrication. After TMDC sample preparation, Raman and photoluminescence (PL) spectroscopic measurements are usually performed to identify the thickness and bandgap of the sample. [8][9][10][11][12][13][14][15][16][17][18][19][20][21] The optical absorption and emission signals of the sample become larger as the electric field (E-field) intensity of the incident light in the sample increases. In the SiO 2 /Si substrates, the light undergoes multiple reflections in the SiO 2 layer, leading to interference between its partial waves. Local maxima of the E-field intensity appear when the SiO 2 thickness is equal to (2m − 1)λ/4n SiO2 , where m is a positive integer, λ is the light wavelength, and n SiO2 is the refractive index of SiO 2 , which are identified as Fabry-Perot (FP) resonances. [9][10][11][12][13] At every FP resonance, TMDC layers on SiO 2 /Si substrates can produce very strong Raman and PL intensities. To take advantages of the FP resonance, the dielectric layer is at least a quarter-wave in thickness and most of the researchers have used SiO 2 /Si substrates with ≈300 nm thick SiO 2 layers. [9][10][11][12][13] The light-matter interactions in extremely thin TMDC layers can be strengthened using plasmonic nanoantennae, photonic nanostructures, and the FP cavities. [11,[13][14][15][16][17][18][19][20] Generally, the absorption enhancement is observed only within narrow ranges of the wavelength and angle of the incident light. [9][10][11][12][13][14][15][16][17][18][19][20] To aid material characterization, we can choose an optimal nanostructure to maximize the absorption of a TMDC sample at a specific wavelength. However, such wavelength-and anglesensitive absorption is inappropriate for some applications, including photovoltaics, photodetection, and photocatalysis. [5][6][7] As an alternative approach, Jariwala et al. [7] demonstrated nearunity, broadband absorption in <15 nm thick TMDC layers on Ag and Au back-reflecting substrates. Because TMDC materials usually have a complex refractive index n n ik  = + with an extremely high extinction coefficient (k) in the visible spectrum, The optical characteristics of MoS 2 monolayers on SiO 2 /Si substrates with an SiO 2 thickness ranging from 40 to 130 nm are investigated. The measured Raman and optical reflection spectra of the MoS 2 monolayers vary considerably depending on the SiO 2 thickness. The Raman peak intensity of the MoS 2 monolayer on the substrate with an 80 nm thick SiO 2 layer is four times larger than those in the cases of 40-and 130 nm thick SiO 2 layers, indicating a significant difference in the absorption at the excitation wavelength. The incident light undergoes anomalous phase changes upon r...

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Engineering light emission of two-dimensional materials in both the weak and strong coupling regimes

Cited by 24 publications

References 63 publications

Ultrafast all-optical switching enabled by epsilon-near-zero-tailored absorption in metal-insulator nanocavities

Ultrafast all-optical switching enabled by epsilon-near-zero-tailored absorption in metal-insulator nanocavities

Out-of-plane orientation of luminescent excitons in two-dimensional indium selenide

Interference‐Enhanced Broadband Absorption of Monolayer MoS₂ on Sub‐100 nm Thick SiO₂/Si Substrates: Reflection and Transmission Phase Changes at Interfaces

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Engineering light emission of two-dimensional materials in both the weak and strong coupling regimes

Cited by 24 publications

References 63 publications

Ultrafast all-optical switching enabled by epsilon-near-zero-tailored absorption in metal-insulator nanocavities

Ultrafast all-optical switching enabled by epsilon-near-zero-tailored absorption in metal-insulator nanocavities

Out-of-plane orientation of luminescent excitons in two-dimensional indium selenide

Interference‐Enhanced Broadband Absorption of Monolayer MoS2 on Sub‐100 nm Thick SiO2/Si Substrates: Reflection and Transmission Phase Changes at Interfaces

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Interference‐Enhanced Broadband Absorption of Monolayer MoS₂ on Sub‐100 nm Thick SiO₂/Si Substrates: Reflection and Transmission Phase Changes at Interfaces