Engineering Hf0.5Zr0.5O2 Ferroelectric/Anti- Ferroelectric Phases With Oxygen Vacancy and Interface Energy Achieving High Remanent Polarization and Dielectric Constants

Zhao, Zefu; Chen, Yu-Rui; Wang, Jer-Fu; Chen, Yun-Wen; Lin, Yuxuan; Xing, Yifan; Liu, C. W.; Hu, Chenming

doi:10.1109/led.2022.3149309

Cited by 32 publications

(11 citation statements)

References 26 publications

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“…The temperature of 250°C was maintained during the plasma-enhanced atomic layer deposition (PEALD) process. The O2 exposure times of 5s and 10s were used to form alloy and superlattice structures, respectively [13]. The Hf0.5Zr0.5O2 films were made of 5 cycles…”

Section: Methodsmentioning

confidence: 99%

“…ZrO2 and 5 cycles HfO2 (5 periods, total 10 cycles) (Fig. 1 (a)) while ZrO2 as the first layer can achieve the higher 2Pr than HfO2 first [13]. The in-situ TiN bottom and top electrodes were deposited through PEALD in the forming gas (50%N2 + 50%H2).…”

Section: Improved Ferroelectricity In Cryogenic Phasementioning

confidence: 99%

“…It has been reported that o-phase can be stabilized in a particular thickness by tuning the surface energy effect [12]. In addition, our previous work has discussed the effects of oxygen vacancy concentration [Vo] on phase formation [13]. The amount of [Vo] is used to control FE and AFE characteristics at room temperature in our MFM/MIM heterostructures [13].…”

Section: Introductionmentioning

confidence: 99%

“…In addition, our previous work has discussed the effects of oxygen vacancy concentration [Vo] on phase formation [13]. The amount of [Vo] is used to control FE and AFE characteristics at room temperature in our MFM/MIM heterostructures [13]. High [Vo] leads to alloys and favors the AFE characteristics at room temperature, while low [Vo] leads to superlattices and favors the FE characteristics at room temperature.…”

Section: Introductionmentioning

confidence: 99%

“…High [Vo] leads to alloys and favors the AFE characteristics at room temperature, while low [Vo] leads to superlattices and favors the FE characteristics at room temperature. Furthermore, HfxZr1-xO2 with superlattice structures have also been concluded in favoring o-phase, while HfxZr1-xO2 alloys helped the formation of t-phase with relatively high dielectric constant [13]. Due to the overlaps of the peak position in grazing incident X-ray diffraction (GIXRD) spectra, the ophase and t-phase are challenging to be identified in the HfxZr1-xO2 films.…”

Section: Introductionmentioning

confidence: 99%

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Improved Ferroelectricity in Cryogenic Phase Transition of Hf_0.5Zr_0.5O₂

Xing

Chen

Wang

et al. 2022

IEEE J. Electron Devices Soc.

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Section: Methodsmentioning

confidence: 99%

Section: Improved Ferroelectricity In Cryogenic Phasementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Improved Ferroelectricity in Cryogenic Phase Transition of Hf_0.5Zr_0.5O₂

Xing

Chen

Wang

et al. 2022

IEEE J. Electron Devices Soc.

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Ferroelectric Hafnium Oxide Films for In‐Memory Computing Applications

Wang

et al. 2022

Adv Elect Materials

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Traditional von Neumann architecture is facing severe challenges due to separated physical structure of memory and processing units, which inspires the development of in‐memory computing electronics. Intriguingly, as a kind of complementary metal‐oxide‐semiconducor compatible ferroelectric material, HfO2 is widely studied based on first‐principles calculation in the semiconductor field, showing great potential in constructing emerging electronics. Different structures including ferroelectric diode, ferroelectric field effect transistor, and ferroelectric tunnel junctions based on HfO2 are proposed for in‐memory computing application. Here, this work reviews the progress of HfO2 from materials to devices, including crystal structure, fatigue mechanism, first‐principles calculation, and neuromorphic computing application of HfO2‐based device. This work can provide a reference for the HfO2 ferroelectric device development for next‐generation in‐memory computing applications.

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Back‐End‐of‐Line Integration of Synaptic Weights using HfO₂/ZrO₂ Nanolaminates

Bégon‐Lours,

Slesazeck,

Falcone

et al. 2024

Adv Elect Materials

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In artificial neural networks, the “synaptic weights” connecting the neurons are adjusted during the training. Beyond silicon, functionalizing the back‐end‐of‐line (BEOL) of CMOS circuits with novel materials is a key enabler for deploying neural network accelerators. The hardware implementation of the synaptic weights requires linear and reprogrammable resistive elements. In ferroelectric tunnel junctions, the resistance is programmed by controlling the configuration of the ferroelectric domains with electrical pulses. From ferroelectric HfZrO4 to HfO2–ZrO2 nanolaminates (NL), the crystallization temperature lowers below the upper limit of 400 °C required for CMOS BEOL. The device footprint is reduced, and the maximum‐to‐minimum conductance ratio increases from 7 to 32. Operated with pulses in the ultra‐fast (20 ns) and biological (500 µs) timescales, the synaptic plasticity exhibits several regimes. Dynamic hysteresis mode characterization after up to 1011 switching cycles indicates the coexistence of ferroelectric and non‐ferroelectric effects such as defect rearrangement. Temperature‐dependent transport measurements in the Ohmic (linear) regime support these conclusions. Multi‐level resistive switching is achieved in HfO2–ZrO2 NL co‐integrated to CMOS in the BEOL. 1T‐1R operation is demonstrated, paving the way for hardware implementation of synaptic weights for in‐memory neuromorphic computing.

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Engineering Hf_0.5Zr_0.5O₂ Ferroelectric/Anti- Ferroelectric Phases With Oxygen Vacancy and Interface Energy Achieving High Remanent Polarization and Dielectric Constants

Cited by 32 publications

References 26 publications

Improved Ferroelectricity in Cryogenic Phase Transition of Hf_0.5Zr_0.5O₂

Improved Ferroelectricity in Cryogenic Phase Transition of Hf_0.5Zr_0.5O₂

Ferroelectric Hafnium Oxide Films for In‐Memory Computing Applications

Back‐End‐of‐Line Integration of Synaptic Weights using HfO₂/ZrO₂ Nanolaminates

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Engineering Hf0.5Zr0.5O2 Ferroelectric/Anti- Ferroelectric Phases With Oxygen Vacancy and Interface Energy Achieving High Remanent Polarization and Dielectric Constants

Cited by 32 publications

References 26 publications

Improved Ferroelectricity in Cryogenic Phase Transition of Hf0.5Zr0.5O2

Improved Ferroelectricity in Cryogenic Phase Transition of Hf0.5Zr0.5O2

Ferroelectric Hafnium Oxide Films for In‐Memory Computing Applications

Back‐End‐of‐Line Integration of Synaptic Weights using HfO2/ZrO2 Nanolaminates

Contact Info

Product

Resources

About

Engineering Hf_0.5Zr_0.5O₂ Ferroelectric/Anti- Ferroelectric Phases With Oxygen Vacancy and Interface Energy Achieving High Remanent Polarization and Dielectric Constants

Improved Ferroelectricity in Cryogenic Phase Transition of Hf_0.5Zr_0.5O₂

Improved Ferroelectricity in Cryogenic Phase Transition of Hf_0.5Zr_0.5O₂

Back‐End‐of‐Line Integration of Synaptic Weights using HfO₂/ZrO₂ Nanolaminates