Engineering embedded metal nanoparticles with ion beam technology

Ren, Feng; Xiao, Xiangheng; Cai, Guangxu; Wang, Jianbo; Jiang, Changzhong

doi:10.1007/s00339-009-5205-3

Cited by 38 publications

(16 citation statements)

References 45 publications

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“…This was the well-known growth process of Ostwald ripening, and had been confirmed in many similar experimental observations of ion implantations. [30][31][32][33] For a condition of very high ion fluence, a buried layer of implanted atoms in the matrix would form by coalescence, as shown in Figure 2 These simulation results were fully consistent with many experimental observations, [30][31][32][33][34][35][36][37] and well explained the spatial and size distributions of implanted ions during ion implantation. For a condition of increasing ion mass, the distribution profile of implanted ions in the theoretical calculation was changed to the curve of Figure 1(b), while keeping all other simulation parameters the same as those in Figure 2.…”

Section: Resultssupporting

confidence: 84%

Three-Dimensional Modeling of Embedded Nanoparticles Formation by Ion Beam Implantation

Li¹

2013

j comput theor nanosci

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A three-dimensional model was developed to investigate the formation of embedded nanoparticles by ion beam implantation. The dynamical nucleation and growth process, including well-known Ostwald ripening, were successfully reconstructed by a theoretical model. Considering various Gaussian distribution profiles of implanted ions for different conditions, the effects of implanted ion mass, fluence, ion flux and temperature on the morphology of nanostructures were also revealed. According to the numerical calculations, no precipitates or particles formed in the early stage of implantation due to the low ion fluence and insufficient time for ion diffusion. With increasing ion fluence, immiscible impurity atoms started to segregate as dispersed nanoparticles. For a very high ion fluence, the implantation-induced nanostructure with a buried layer of implanted atoms developed. These simulation results were fully consistent with many experimental observations. This theoretical model gives a remarkable insight into the formation mechanism, and makes it possible to totally control and optimize the nanostructure through ion-implantation technology.

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Section: Resultssupporting

confidence: 84%

Three-Dimensional Modeling of Embedded Nanoparticles Formation by Ion Beam Implantation

Li¹

2013

j comput theor nanosci

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“…1͒, usually described by classical thermodynamic concepts discussed elsewhere. [7][8][9][10] Upon aging, two sets of structures are formed. The first set consists of TEM observable particles ͓Fig.…”

Section: Figmentioning

confidence: 99%

“…Their growth follows a nonhomogeneous coarsening process which produces both size and depth dispersed NP systems. [7][8][9][10] We have previously demonstrated that the classical nucleation route observed for most metal atoms implanted into silica films can be avoided in the case of Sn. 11 It was argued that, during a low temperature long-term thermal treatment ͑aging͒, there is formation of small atomic clusters with high thermal stability.…”

Section: Introductionmentioning

confidence: 99%

Aging effects on the nucleation of Pb nanoparticles in silica

Luce

Kremer

Reboh

et al. 2011

Journal of Applied Physics

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The ion beam synthesis of Pb nanoparticles (NPs) in silica is studied in terms of a two step thermal annealing process consisting of a low temperature long time aging treatment followed by a high temperature short time one. The samples are investigated by Rutherford backscattering spectrometry and transmission electron microscopy. The results obtained show that highly stable Pb trapping structures are formed during the aging treatment. These structures only dissociate at high temperatures, inhibiting the nucleation of NPs in the metallic phase and causing an atomic redistribution that renders the exclusive formation of a two dimensional, uniform and dense array of Pb NPs at the silica–silicon interface. The results are discussed on the basis of classic thermodynamic concepts.

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“…Ion Beam Synthesis (IBS) involving irradiation of low energy (< 100 keV) metal ions in Si based substrates and subsequent thermal annealing has developed into a reliable technique for production of buried structures in the subsurface regions (< 60 nm in depth) [19][20][21]. The ion implantation parameters can control the ion type, fluence (concentration), and the energy (depth); hence one can architect the size and depth of the NP in Si substrate.…”

Section: Introductionmentioning

confidence: 99%

Investigation of structural and optical properties of Ag nanoclusters formed in Si(100) after multiple implantations of low energies Ag ions and post-thermal annealing at a temperature below the Ag-Si eutectic point

Dhoubhadel

Rout

Lakshantha

et al. 2014

AIP Conference Proceedings

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Articles you may be interested inResistive switching characteristics in dielectric/ferroelectric composite devices improved by post-thermal annealing at relatively low temperature Appl. Phys. Lett. 104, 092903 (2014) were sequentially implanted into Si(100) to create a distribution of different sizes and densities of buried metal nanoclusters (NC) at the near-surface layers. These structures have applications in fields involving plasmonics, optical emitters, photovoltaic, and nano-electronics. The dimension, location and concentration of these NCs influence the type of the applications. The implantation profiles were simulated by utilizing the widely used Stopping and Range of Ions in Matter (SRIM) code as well as a dynamic-TRIM code, which accounts for surface sputtering. The implanted samples were subsequently annealed either in a gas mixture of 4% H 2 + 96% Ar or in vacuum at a temperature ~500 ºC up to 90 minutes. The annealing was carried out below the eutectic temperature (~ 841 ºC) of Ag-Si to preferentially synthesize Ag NCs in Si rather than silicide. In order to study the size, concentration and distribution of the Ag NCs in Si, the samples were characterized by Rutherford Backscattering Spectrometry (RBS), X-ray photoelectron spectroscopy (XPS) in combination with Ar-ion etching, and Transmission Electron Microscopy (TEM) techniques. The annealed samples showed a preferential distribution of the Ag NCs' sizes up to 10 nm either near the surface region (< 25nm) or at deeper layers (60-80 nm) closer to the interface of the implanted layer with the crystalline Si substrate. Ag NCs of larger diameters (up to 15 nm) were seen in the annealed sample near the peak concentration positions (~35-55 nm) of the implanted Ag ions. We have investigated the optical absorption properties due to these nano-structures in Si. The multiple energy implanted samples annealed in a gas mixture of 4% H 2 + 96% Ar show enhancements in the optical absorption in the visible range.

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Engineering embedded metal nanoparticles with ion beam technology

Cited by 38 publications

References 45 publications

Three-Dimensional Modeling of Embedded Nanoparticles Formation by Ion Beam Implantation

Three-Dimensional Modeling of Embedded Nanoparticles Formation by Ion Beam Implantation

Aging effects on the nucleation of Pb nanoparticles in silica

Investigation of structural and optical properties of Ag nanoclusters formed in Si(100) after multiple implantations of low energies Ag ions and post-thermal annealing at a temperature below the Ag-Si eutectic point

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