Engineered interface states and optical absorption of β-Ga2O3/4H-SiC heterojunctions by irradiation-induced oxygen defects from first-principles
Xiaoning Zhang,
Xi Liang,
Haoyu Dong
et al.
Abstract:Designing high-performance β-Ga2O3/4H-SiC heterojunctions has been widely investigated in recent years due to their unique applications in photodectors. Due to the low defect formation energy of oxygen vacancies, β-Ga2O3-based heterojunction...
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