Engineered interface states and optical absorption of β-Ga₂O₃/4H-SiC heterojunctions by irradiation-induced oxygen defects from first-principles

Abstract

Designing high-performance β-Ga2O3/4H-SiC heterojunctions has been widely investigated in recent years due to their unique applications in photodectors. Due to the low defect formation energy of oxygen vacancies, β-Ga2O3-based heterojunction...