2020
DOI: 10.1002/admi.202000621
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Engineered Creation of Periodic Giant, Nonuniform Strains in MoS2 Monolayers

Abstract: The realization of ordered strain fields in 2D crystals is an intriguing perspective in many respects, including the instauration of novel transport regimes and enhanced device performances. However, the current straining techniques hardly allow to reach strains higher than ≈3% and in most cases there is no control over the strain distribution. In this work, a method is demonstrated to subject micrometric regions of atomically thin molybdenum disulfide (MoS2) to giant strains with the desired ordering. Selecti… Show more

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Cited by 55 publications
(95 citation statements)
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“…Figure 1b,c compare tapping-mode AFM topographies, 15 µm × 15 µm in lateral size, of uncoated and HSQ-coated MoS 2 surfaces, revealing the evolution toward a fine control of dome size and position due to the engineering of the sample prior to H + irradiation (corresponding optical images are given in Note S1 in the Supporting Information). Furthermore, the spontaneously created domes have a typical aspect ratio h/R = 0.16 (where h is the maximum height and R the footprint radius of the dome), namely universal value, in agreement with previous measurements; [29,39,40] on the contrary, the presence of the HSQ mask favors an over-pressurization of the internal gas inside the engineered domes, making their aspect ratio higher than 0.16. [40] With this method we have thus intentionally created domes spanning over a wide range of aspect ratios in between 0.15 and 0.31, thus permitting studies under quite different conditions, otherwise unattainable.…”
Section: Membrane Formation In Mossupporting
confidence: 90%
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“…Figure 1b,c compare tapping-mode AFM topographies, 15 µm × 15 µm in lateral size, of uncoated and HSQ-coated MoS 2 surfaces, revealing the evolution toward a fine control of dome size and position due to the engineering of the sample prior to H + irradiation (corresponding optical images are given in Note S1 in the Supporting Information). Furthermore, the spontaneously created domes have a typical aspect ratio h/R = 0.16 (where h is the maximum height and R the footprint radius of the dome), namely universal value, in agreement with previous measurements; [29,39,40] on the contrary, the presence of the HSQ mask favors an over-pressurization of the internal gas inside the engineered domes, making their aspect ratio higher than 0.16. [40] With this method we have thus intentionally created domes spanning over a wide range of aspect ratios in between 0.15 and 0.31, thus permitting studies under quite different conditions, otherwise unattainable.…”
Section: Membrane Formation In Mossupporting
confidence: 90%
“…The subsequent formation of hydrogen molecules in the crystal interlayer regions gives rise to localized protrusions appearing on the flake surface in the shape of domes. [36][37][38][39][40] Here, we engineer the dome formation process as follows: [40] first of all, MoS 2 flakes are mechanically exfoliated onto a Si/SiO 2 substrate (top panel of Figure 1a); subsequently, the sample is partially coated by hydrogen silesquioxane (HSQ) negative-tone e-beam resists, of thickness varying in the range 50-100 nm; then, octagonal openings of micrometer-scale radius (middle panel of Figure 1a) are created in the HSQ layer via electron-beam lithography (EBL); finally, a low-energy proton irradiation is performed (bottom panel of Figure 1a). Additional information on sample production, patterning, and irradiation is reported in the Experimental Section.…”
Section: Membrane Formation In Mosmentioning
confidence: 99%
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