2013
DOI: 10.1021/jp4011839
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Energy-Transfer-Upconversion Models, Their Applicability and Breakdown in the Presence of Spectroscopically Distinct Ion Classes: A Case Study in Amorphous Al2O3:Er3+

Abstract: The influence of energy migration and energy-transfer upconversion (ETU) among neighboring Er3+ ions on luminescence decay and steady-state population densities in Al2O3:Er3+ thin films is investigated by means of photoluminescence decay measurements under quasi-CW excitation. The experimental results are analyzed by several models. As expected from the basic physical assumptions made by these models, only Zubenko’s microscopic model provides good agreement with the experimental data, while other donor–accepto… Show more

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Cited by 89 publications
(135 citation statements)
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“…Amorphous materials have also been used as the host materials for upconversion and solid state lasers, such as amorphous silicon, Al 2 O 3 , and Y 2 O 3 . [40][41][42][43] It is known that local crystal field affects the upconversion efficiency and it is very important to understand its effect on the luminescent properties. One solution is to synthesize both the bulk and amorphous host materials and make a comparative study.…”
mentioning
confidence: 99%
“…Amorphous materials have also been used as the host materials for upconversion and solid state lasers, such as amorphous silicon, Al 2 O 3 , and Y 2 O 3 . [40][41][42][43] It is known that local crystal field affects the upconversion efficiency and it is very important to understand its effect on the luminescent properties. One solution is to synthesize both the bulk and amorphous host materials and make a comparative study.…”
mentioning
confidence: 99%
“…This is because the clustering of active ions may lead to undesirable energy transfer between the ions, hence degrading the gain and power efficiency. Apart from that, the increase of active ion concentration could increase the magnitude of interionic processes such as energy transfer upconversion and cross-relaxation, which in turn impose a limit to the gain achievable in the material [22,28].…”
Section: Rare-earth-ion-doped Gain Materialsmentioning
confidence: 99%
“…Thanks to the long excited state lifetime up to ~7.5 ms [28], high bit rate amplification at 170 Gbps had been demonstrated in erbium-doped waveguide amplifier without significant gain modulation [34]. On the other hand, high bit rate signal amplification (e.g.…”
Section: State-of-the-art Waveguide Amplifiersmentioning
confidence: 99%
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