Energy transfer in ZnO-anthracene hybrid structure

Shimada, Ryoko; Urban, Ben E.; Sharma, Mamta; Singh, Akhilesh Kumar; Avrutin, Vitaliy; Morkoç̌, H.; Neogi, Arup

doi:10.1364/ome.2.000526

Cited by 14 publications

(19 citation statements)

References 21 publications

(26 reference statements)

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“…ZnO semiconductors have strong exciton binding energy (∼60 meV) and are stable at room temperature. The energy transfer mechanism in ZnO/anthracene hybrid systems 5 has previously been reported only at low temperatures 7. The Mott transitions are significantly more temperature dependent than the highly localized Frenkel excitons in the organic molecule.…”

Section: Introductionmentioning

confidence: 96%

A 3D Nanoporous Ni–Mo Electrocatalyst with Negligible Overpotential for Alkaline Hydrogen Evolution

Wang¹,

Zhang²,

Xu³

et al. 2014

ChemElectroChem

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The front cover artwork is provided by the group of Prof. Xiaoming Sun and Prof. Pengbo Wan at Beijing University of Chemical Technology (PR China). The image shows a Ni–Mo electrocatalyst for the hydrogen evolution reaction (HER). It is revealed that the performance of the fabricated 3D Ni–Mo electrocatalyst with negligible overpotential, high current density, ultrahigh activity, and durable stability for alkaline HER, challenges that of Pt catalysts. Read the full text of the article at 10.1002/celc.201402089.

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Section: Introductionmentioning

confidence: 96%

A 3D Nanoporous Ni–Mo Electrocatalyst with Negligible Overpotential for Alkaline Hydrogen Evolution

Wang¹,

Zhang²,

Xu³

et al. 2014

ChemElectroChem

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“…[1][2][3][4] In most of these applications, efficient energy transfer from the host to the RE 3+ is desired. ZnO with a band gap of 3.37 eV and a bound exciton energy of 60 meV is also an important semiconductor for which UV and visible emissions are widely reported.…”

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confidence: 99%

Efficient energy transfer in Eu-doped ZnO on diamond film

Jiang

et al. 2014

RSC Adv.

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Eu-zinc oxide (ZnO) has been fabricated on a p-diamond substrate by a hydrothermal technique. Efficient Eu-ZnO/diamond visible light emission is observed in the electroluminescence process. The mechanism for the energy transfer behavior and the emissions is discussed.Semiconductors doped with rare earth (RE) elements have attracted much attention in recent years due to their novel optical properties and promising applications in many elds, such as ber ampliers, light emitting devices and uorescent lamps. 1-4 In most of these applications, efficient energy transfer from the host to the RE 3+ is desired. ZnO with a band gap of 3.37 eV and a bound exciton energy of 60 meV is also an important semiconductor for which UV and visible emissions are widely reported. 5 Unfortunately, the work of harvesting intense Eu 3+ emission from ZnO lms, ceramics, and powders remains disappointing because of the strong quenching effect of the wide-band, self-activated, green or yellow emissions and the higher energy-level position of Eu 3+ relative to the bottom conduction band (CB). 6 It has been established that direct ZnO / Eu 3+ energy transfer seems physically impossible, as the radiative and nonradiative decay of excitons in ZnO are >10 2 times faster than the energy-transfer rate of RE 3+ . Fortunately, energy transfer can be facilitated by the presence of intrinsic or extrinsic defects as energy trap centers in various systems, such as ZnO/diamond, 7 which suggests that the introduction of an appropriate trap center is crucial for efficient ZnO / Eu 3+ energy transfer. Several groups have reported that defects, either intrinsic or extrinsic, can serve as the energy trapping centers to facilitate energy transfer and relevant light emission. Park et al. indicated that extrinsic defects like chlorine impurities can assist the red emission in Eu 3+ -doped ZnO. 8 Wang et al. reported the surface defects may act to help the process of energy transfer from ZnO to Eu 3+ ions. 9 Zeng et al. indicated that in Eu-doped ZnO microspheres Eu 2+ ions act as the trapping centers and transfer energy to Eu 3+ ions, leading to the emission. 10In this work, nanostructural Eu doped n-ZnO on p-type diamond has been fabricated to research the current-voltage (I-V), electroluminescence (EL) and photoluminescence (PL) properties. For the rst time, efficient Eu-ZnO/diamond visible light emission was observed. The Eu-ZnO/diamond has been realized with good rectifying behavior. By rst-principles calculation, it is demonstrated that the doped Eu atoms are favorable to the octahedral interstice in ZnO lattice.The polycrystalline diamond lm is deposited on Si wafer by hot lament CVD system. 11 Boron source of diborane or trimethylborate was additionally introduced to the reaction gases of methane/hydrogen (CH 4 /H 2 ). Before the hydrothermal process, a ZnO seed layer was deposited by radio frequency (at 13.56 MHz) magnetron sputtering process. For the hydrothermal growth, the aqueous solution of zinc acetate dihydrate and hexamethylenetetramine ...

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“…As Frenkel excitons are highly localized in the polymer matrix, the nonradiative recombination rate is low as evidenced by relatively low temperature sensitivity in the emission process [5]. Additional experiments show a slight enhancement with temperature (viz.…”

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confidence: 99%

“…Polyphenylsiloxane (PPS) glass is one of such glassy materials, which softens at low temperature and serves as a host capable of dispersing anthracene molecules homogeneously without thermal degradation [4]. The potential of ZnO/anthracene-doped glass hybrids for efficient energy transfer was recently demonstrated by Shimada et al [5]. This hybrid material system has highly localized excitons which are randomly dispersed in a thin film deposited on silicon or any other conducting substrate.…”

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confidence: 99%

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Enhanced photoluminescence emission from anthracene-doped polyphenylsiloxane glass

et al. 2013

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Anthracene-doped polyphenylsiloxane (PPS) glass containing silver nanoparticles (AgNPs) of appropriate size was synthesized in a form of solid thin films for modifying light emission characteristics. The photoluminescence (PL) emission from the anthracene molecules at ~2.95 eV was resonantly coupled to the localized surface plasmon (LSP) polariton modes that were induced by the excitation of ~30 nm sized AgNPs. The increase in absorption of incident photons within a highly scattering medium, energy transfer from the localized excitons to the LSP modes, and the electrostatic Coulomb effects of the excitons in the presence of metal NPs all resulted in a significant enhancement of PL emission. The PL enhancement is dependent on the concentration of the anthracene molecules. The integrated PL intensity enhancement at the optimum concentration of anthracene molecules in the PPS glass with AgNPs is found to exceed 50.

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Energy transfer in ZnO-anthracene hybrid structure

Cited by 14 publications

References 21 publications

A 3D Nanoporous Ni–Mo Electrocatalyst with Negligible Overpotential for Alkaline Hydrogen Evolution

A 3D Nanoporous Ni–Mo Electrocatalyst with Negligible Overpotential for Alkaline Hydrogen Evolution

Efficient energy transfer in Eu-doped ZnO on diamond film

Enhanced photoluminescence emission from anthracene-doped polyphenylsiloxane glass

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