Energy Transfer from Quantum Dots to Graphene and MoS<sub>2</sub>: The Role of Absorption and Screening in Two-Dimensional Materials

Raja, Archana; Montoya−Castillo, Andrés; Zultak, Johanna; Zhang, Xiao-Xiao; Ye, Ziliang; Roquelet, Cyrielle; Chenet, Daniel; Zande, Arend M. van der; Huang, Pinshane Y.; Jockusch, Steffen; Hone, James; Reichman, David R.; Brus, L. E.; Heinz, Tony F.

doi:10.1021/acs.nanolett.5b05012

Cited by 185 publications

(263 citation statements)

References 46 publications

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“…In particular, in refs. [26,30], the authors report that, as the number of MoS 2 layers is increased, the SE rate of the QEs decreases. The authors of ref.…”

Section: B Spontaneous Emission In the Presence Of A Single Mos 2 Layermentioning

confidence: 99%

“…The authors of ref. [30] use a bulk dielectric permittivity to describe the optical response of the MoS 2 and they attribute the decreasing behavior to dielectric screening [45]. In particular, they found that, by increasing the thickness of the MoS 2 slab, the field intensity created by a dipole source on the slab drops.…”

Section: B Spontaneous Emission In the Presence Of A Single Mos 2 Layermentioning

confidence: 99%

“…Furthermore, in refs. [26,29,30], the emission profile of the QEs investigated is different for each case.…”

Section: B Spontaneous Emission In the Presence Of A Single Mos 2 Layermentioning

confidence: 99%

“…Investigating the spectral and distance dependence of the interactions between QEs and TMD layers or monolayers is of absolute importance for such applications. Various experimental studies have been performed regarding the investigation of such interactions, and they report contradicting results concerning the power law followed by the interaction distance between the QE-TMD layers, where different QEs are considered for each case [26][27][28][29][30][31]. A systematic analysis is needed to account for the spectral and distance dependence of the QE-TMD layer interaction.…”

Section: Introductionmentioning

confidence: 99%

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Near-field relaxation of a quantum emitter to two-dimensional semiconductors: Surface dissipation and exciton polaritons

et al. 2016

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The total spontaneous emission rate of a quantum emitter in the presence of an infinite MoS 2 monolayer is enhanced by several orders of magnitude, compared to its free-space value, due to the excitation of surface exciton polariton modes and lossy modes. The spectral and distance dependence of the spontaneous emission rate are analyzed and the lossy-surface-wave, surface exciton polariton mode and radiative contributions are identified. The transverse magnetic and transverse electric exciton polariton modes can be excited for different emission frequencies of the quantum emitter, and their contributions to the total spontaneous emission rate are different. To calculate these different decay rates, we use the non-Hermitian description of light-matter interactions, employing a Green's tensor formalism. The distance dependence follows different trends depending on the emission energy of quantum emitter. For the case of the lossy surface waves, the distance dependence follows a z −n , n = 2, 3, 4, trend. When transverse magnetic exciton polariton modes are excited, they dominate and characterize the distance dependence of the spontaneous emission rate of a quantum emitter in the presence of the MoS 2 layers. The interaction between a quantum emitter and a MoS 2 superlattice is investigated and we observe a splitting of the modes supported by the superlattice. Moreover, a blue shift of the peak values of the spontaneous emission rate of a quantum emitter is observed as the number of layers is increased. The field distribution profiles, created by a quantum emitter, are used to explain this behavior.

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“…In particular, in refs. [26,30], the authors report that, as the number of MoS 2 layers is increased, the SE rate of the QEs decreases. The authors of ref.…”

Section: B Spontaneous Emission In the Presence Of A Single Mos 2 Layermentioning

confidence: 99%

Section: B Spontaneous Emission In the Presence Of A Single Mos 2 Layermentioning

confidence: 99%

“…Furthermore, in refs. [26,29,30], the emission profile of the QEs investigated is different for each case.…”

Section: B Spontaneous Emission In the Presence Of A Single Mos 2 Layermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Near-field relaxation of a quantum emitter to two-dimensional semiconductors: Surface dissipation and exciton polaritons

et al. 2016

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“…According to a study by Raja and coworkers, the rate of NRET in layered materials such as graphene and MoS 2 is a function of number of layers by comparing the decay rates of quantum dot fluorescence when the chromophores are placed on graphene and MoS 2 [63]. As illustrated with a gray line in Figure 8a, the population of charge carriers decays relatively slowly (a luminescence lifetime of 5 ns) in the absence of the acceptor parties (graphene and MoS 2 ).…”

Section: Graphene As Electron Acceptormentioning

confidence: 99%

Role of Graphene in Photocatalytic Solar Fuel Generation

Adeli¹,

Taghipour²

2018

Visible-Light Photocatalysis of Carbon-Based Materials

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One of the most promising methods for conversion and storage of solar energy is in the form of the chemical bonds of an energy carrier, such as hydrogen or light hydrocarbons. However, the traditional methods to harness and store solar energy are simply too expensive to be implemented on a large scale. It has been documented that the recombination of photo-induced charge carriers is the greatest source of inefficiency in photocatalytic systems. In the last decade, graphene derivatives and their functionalized nanostructures were extensively utilized for various roles to improve the efficiency of photocatalytic solar fuel generation. These include photocatalyst/redox active sites via band gap and defect density engineering, charge acceptor due to their excellent carrier mobility, a solid-state charge mediator by electronic band alignment, and light absorber by taking advantage of their photoluminescence characteristics at the nanoscale. This chapter aims to provide an authoritative and in-depth review on the properties and application of graphene derivatives, as well as the recent advances in the design of graphene-based photocatalytic systems. The knowledge extracted from the presented materials can be applied to other applications dealing with surface chemistry, interfacial science, and optoelectronic device fabrication.

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Near‐Field Energy Transfer Using Nanoemitters For Optoelectronics

Güzeltürk

Demir

2016

Adv Funct Materials

101

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wileyonlinelibrary.comtelecommunications. Conventional optoelectronics relies on high-temperature, gas-phase, epitaxy-grown semiconductors such as III-V compounds, [1,2] which make a mature materials technology. However, high-thermal budget, high-cost, and a limited set of substrates, which are CMOS-incompatible, hamper their use in versatile platforms, including flexible surfaces and large-area applications. Besides, the last decade has witnessed the rise of alternative low-dimensional semiconductor materials such as colloidal semiconductor nanocrystals, [3] organic semiconductors [4,5] and more recently, two-dimensional (2D) semiconductors. [6] These materials offer advantages over conventional semiconductors thanks to their low cost and low thermal budget growth, solution processability, and roll-to-roll fabrication on arbitrary substrates on a large scale. These materials are expected to impact a broad range of applications in optoelectronics and electronics.In bulk and weakly confined semiconductors, the excited electronic state is typically in the form of free electron-hole pairs due to weak Coulomb interaction energy (∼10 meV). [7] On the other hand, in low-dimensional nanoemitters, the excited state is essentially in the form of strongly bound electron-hole pairs (i.e., excitons) with large Coulomb interaction energy (10 meV) thanks to strong quantum confinement [8] and large dielectric screening, [9,10] allowing for strong light-matter interactions. Thus, in these nanoemitters, it becomes central to control excitonic interactions including exciton transfer, diffusion, trapping, dissociation, annihilation, and radiative recombination to accomplish the desired photonic properties and maximize optoelectronic performance.As it naturally happens in photosynthetic light-harvesting complexes, efficient and directed exciton flow is highly desired in semiconductor nanostructures. To this end, mastering exciton flow at the nanoscale through near-field nonradiative energy transfer has proven vital to accomplish efficient light generation and light utilization using nanoemitters and their hybrid nanostructures. [7,[11][12][13][14][15] In this feature article, we highlight recent developments in the field of energy transfer materials for optoelectronics. We review new insights on the near-field nonradiative transfer in excitonic nanoemitter systems. Our main focus is on hybrid systems comprising colloidal nanocrystals, and 2D and organic semiconductors. Also, Effective utilization of excitation energy in nanoemitters requires control of exciton flow at the nanoscale. This can be readily achieved by exploiting nearfield nonradiative energy transfer mechanisms such as dipole-dipole coupling (i.e., Förster resonance energy transfer) and simultaneous two-way electron transfer via exchange interaction (i.e., Dexter energy transfer). In this feature article, we review nonradiative energy transfer processes between emerging nanoemitters and exciton scavengers. To this end, we highlight the potential of colloidal semiconduct...

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Energy Transfer from Quantum Dots to Graphene and MoS₂: The Role of Absorption and Screening in Two-Dimensional Materials

Cited by 185 publications

References 46 publications

Near-field relaxation of a quantum emitter to two-dimensional semiconductors: Surface dissipation and exciton polaritons

Near-field relaxation of a quantum emitter to two-dimensional semiconductors: Surface dissipation and exciton polaritons

Role of Graphene in Photocatalytic Solar Fuel Generation

Near‐Field Energy Transfer Using Nanoemitters For Optoelectronics

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Energy Transfer from Quantum Dots to Graphene and MoS2: The Role of Absorption and Screening in Two-Dimensional Materials

Cited by 185 publications

References 46 publications

Near-field relaxation of a quantum emitter to two-dimensional semiconductors: Surface dissipation and exciton polaritons

Near-field relaxation of a quantum emitter to two-dimensional semiconductors: Surface dissipation and exciton polaritons

Role of Graphene in Photocatalytic Solar Fuel Generation

Near‐Field Energy Transfer Using Nanoemitters For Optoelectronics

Contact Info

Product

Resources

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Energy Transfer from Quantum Dots to Graphene and MoS₂: The Role of Absorption and Screening in Two-Dimensional Materials