2008
DOI: 10.1016/j.optmat.2007.10.004
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Energy transfer between semiconductor nanoparticles (ZnS or CdS) and Eu3+ ions in sol–gel derived ZrO2 thin films

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Cited by 30 publications
(12 citation statements)
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“…The effect is due to the higher absorption cross-section of semiconductor NCs when compared to those of rare earth ions [7]. Particularly, the absorption band of CdS NCs can be tuned according to CdS NCs dimensions.…”
Section: Introductionmentioning
confidence: 99%
“…The effect is due to the higher absorption cross-section of semiconductor NCs when compared to those of rare earth ions [7]. Particularly, the absorption band of CdS NCs can be tuned according to CdS NCs dimensions.…”
Section: Introductionmentioning
confidence: 99%
“…Eu 3+ was the most popular ion for luminescence emission enhancement by semiconductor nanoparticles. Enhancement induced by energy transfer between ZnS or CdS nanoparticles and Eu 3+ ions in ZrO 2 thin films was presented by Ehrhart et al [28]. The authors proposed that energy transfer between the nanoparticles and Eu 3+ ions was due to the formation of exciton and surface defect state of the particles.…”
Section: Enhancement Through Energy Transfer From Semiconductor Nanopmentioning
confidence: 96%
“…20 These peaks are however very weak and leads to weak emissions of red light from Eu 3+ at 614 nm ( 5 D 0 → 7 F 2 ), nevertheless, the presence of these bands in the excitation spectra strongly suggest energy transfer from the ZnS host to the Eu 3+ ions. [21][22][23] The other lower energy peaks at 362-534 nm corresponds to the resonant excitation bands of Eu 3+ ions.…”
Section: Photoluminescence Studiesmentioning
confidence: 99%