Energy Savings Forecast of Solid-State Lighting in General Illumination Applications

Elliott, Clay; Yamada, Mary; Penning, Julie; Schober, Seth; Lee, Kyung Hwa

doi:10.2172/1607661

Cited by 15 publications

(17 citation statements)

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“…The reduced energy cost and carbon footprint of white LEDs have further promoted the market penetration of this technology. According to the latest forecast by the USA Department of Energy (DOE) [90], with further research and development, the transition to white LED sources may result in an annual energy saving of about 569 TWh by the year 2035. This is equivalent to about USD 890 billion in avoided energy costs over the duration of 2017-2035.…”

Section: Nitride-based White Ledsmentioning

confidence: 99%

III-Nitride Light-Emitting Devices

et al. 2021

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III-nitride light-emitting devices have been subjects of intense research for the last several decades owing to the versatility of their applications for fundamental research, as well as their widespread commercial utilization. Nitride light-emitters in the form of light-emitting diodes (LEDs) and lasers have made remarkable progress in recent years, especially in the form of blue LEDs and lasers. However, to further extend the scope of these devices, both below and above the blue emission region of the electromagnetic spectrum, and also to expand their range of practical applications, a number of issues and challenges related to the growth of materials, device design, and fabrication need to be overcome. This review provides a detailed overview of nitride-based LEDs and lasers, starting from their early days of development to the present state-of-the-art light-emitting devices. Besides delineating the scientific and engineering milestones achieved in the path towards the development of the highly matured blue LEDs and lasers, this review provides a sketch of the prevailing challenges associated with the development of long-wavelength, as well as ultraviolet nitride LEDs and lasers. In addition to these, recent progress and future challenges related to the development of next-generation nitride emitters, which include exciton-polariton lasers, spin-LEDs and lasers, and nanostructured emitters based on nanowires and quantum dots, have also been elucidated in this review. The review concludes by touching on the more recent topic of hexagonal boron nitride-based light-emitting devices, which have already shown significant promise as deep ultraviolet and single-photon emitters.

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Section: Nitride-based White Ledsmentioning

confidence: 99%

III-Nitride Light-Emitting Devices

et al. 2021

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“…The units are interconnected via common vertices, whereby a cage is surrounded by four inverted structures and vice versa leading to additional cages. Q 2 ‐type SiN [2] 2 (N 0.25 O 0.75 ) [1] 2 tetrahedra are only interconnect within one unit or equal units along [100] forming dreier rings in the (100) plane (Figure S5). Accordingly, the seeming achter ring channels as viewed along [100] are not closed achter rings but intersecting counterclockwise and clockwise distorted screws along [100] with internal offsets of 5.59(2) and 5.62(2) Å, respectively (Figure S6).…”

Section: Resultsmentioning

confidence: 99%

“…31) based on single‐crystal X‐ray diffraction data. It exhibits a new three‐ dimensional network of vertex sharing SiN [2] 4 and SiN [2] 2 (N 0.25 O 0.75 ) [1] 2 tetrahedra leading to a cage like structure filled by sites occupied solely by lanthanum or mixed occupied by lanthanum and strontium. Due to the mixed cation and anion sites and the charge neutral exchangeability of LaN vs. SrO, the solid solution series La 8‐ x Sr x [Si 10 N 20‐ x O 2+ x ] with 0≤ x ≤2 was synthesized.…”

Section: Discussionmentioning

confidence: 99%

“…The U.S. Department of Energy, Office of Energy Efficiency and Renewable Energy states in its latest "Energy Savings Forecast of Solid-State Lighting in General Illumination Applications" report that in 2017, 38 % of the total energy consumption in the United States (U.S.) was needed for electricity use, of which lighting consumed 6 % of total energy and 16 % of total electricity used. [1] Thereby, solid-state lighting based on phosphor converted light emitting diodes (pcLEDs), which had their breakthrough with the invention of efficient blue light-emitting diodes based on (In,Ga)N primary LEDs by Akasaki, Amano and Nakamura, lead the revolution of the lighting market. [1,2] LEDs exceed traditional lighting technologies like incandescent light bulbs and fluorescent tubes with regard to the combination of energy efficiency, lifetime, versatility, color quality and cost efficiency and can therefore be used in a wide range of lighting applications.…”

Section: Introductionmentioning

confidence: 99%

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Synthesis and Luminescence Properties of Amber Emitting La₇Sr[Si₁₀N₁₉O₃] : Eu²⁺ and Syntheses of the Substitutional Variants RE_8‐xAE_x[Si₁₀N_20‐xO_2+x] : Eu²⁺ with RE=La, Ce; AE=Ca, Sr, Ba; 0≤x≤2

Gamperl

Strobel

Schmidt

et al. 2022

Chemistry A European J

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The oxonitridosilicate La 7 Sr[Si 10 N 19 O 3 ] : Eu 2 + and its substitutional variants RE 8-x AE x [Si 10 N 20-x O 2 + x ] : Eu 2 + with RE = La, Ce; AE = Ca, Sr, Ba and 0 � x � 2 were synthesized starting from REN, SrN/Ca 3 N 2 /Ba 2 N, SiO 2 , amorphous Si 3 N 4 and Eu 2 O 3 as doping agent at 1600 °C in a radiofrequency furnace. The crystal structure of La 7 Sr[Si 10 N 19 O 3 ] was solved and refined based on single-crystal X-ray diffraction data. La 7 Sr[Si 10 N 19 O 3 ] crystallizes in the orthorhombic space group Pmn2 1 (no. 31). The crystal structures of the isotypic compounds RE 8-x AE x -[Si 10 N 20-x O 2 + x ] were confirmed by Rietveld refinements based on powder X-ray diffraction data using the single-crystal data of La 7 Sr[Si 10 N 19 O 3 ] as starting point. Crystal structure elucidation reveals a 3D network of vertex sharing SiN 4 and SiN 2 (N 1/2x/4 O 1/2 + x/4 ) 2 (0 � x � 2) tetrahedra. When excited with UV to blue light, La 7 Sr[Si 10 N 19 O 3 ] : Eu 2 + shows amber luminescence with λ em = 612 nm and fwhm = 84 nm/2194 cm À 1 , which makes it interesting for application in amber phosphorconverted light emitting diodes.

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“…Based on reports from USGS, total global LED production in 2014 consumed 85 kg of indium [45]. According to DOE forecast, the total of LED lighting systems installed in U.S. during 2014 was 215 million and will be roughly 7500 million by 2035 [46,47]. Based on both estimations, indium consumption by LED will be roughly 3 t by 2035, assuming that LED global production growth is on par with U.S.…”

Section: Assumptions and Boundary Of The Modelmentioning

confidence: 99%

Agent-Based Modeling for By-Product Metal Supply—A Case Study on Indium

2021

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With rapid development and deployment of clean energy technology, demand for certain minor metals has increased significantly. However, many such metals are by-products of various host metals and are economically infeasible to extract independently. Meanwhile, by-product metals present in the mined ores may not be extracted even if they are sent to smelters along with host metal concentrates if it is not economically favorable for the producers. This dependency poses potential supply risks to by-product metals. Indium is a typical by-product metal, mainly from zinc mining and refining, and is important for flat panel displays, high efficiency lighting, and emerging thin-film solar panel production. Current indium supply–demand forecast models tend to overlook the volatile and competitive nature of minor metal market and are mostly based on top-down approaches. Therefore, a bottom-up agent-based model can shed new light on the market dynamics and possible outcome of future indium supply–demand relationship. A multi-layered model would also be helpful for identifying possible bottlenecks of indium supply and finding solutions. This work takes indium as an example of minor metal market and sets up an agent-based model to predict future market situation and supply–demand balance. The market is modeled as a Cournot competition oligopolistic market by refineries with capacity restriction based on host metal production. The model maintains active Nash equilibrium each year to simulate competitions between suppliers. The model is validated and verified by historical data and sensitivity analysis. Several scenarios are also explored to illustrate possible uncertainties of the market.

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Energy Savings Forecast of Solid-State Lighting in General Illumination Applications

Cited by 15 publications

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III-Nitride Light-Emitting Devices

III-Nitride Light-Emitting Devices

Synthesis and Luminescence Properties of Amber Emitting La₇Sr[Si₁₀N₁₉O₃] : Eu²⁺ and Syntheses of the Substitutional Variants RE_8‐xAE_x[Si₁₀N_20‐xO_2+x] : Eu²⁺ with RE=La, Ce; AE=Ca, Sr, Ba; 0≤x≤2

Agent-Based Modeling for By-Product Metal Supply—A Case Study on Indium

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Energy Savings Forecast of Solid-State Lighting in General Illumination Applications

Cited by 15 publications

References 0 publications

III-Nitride Light-Emitting Devices

III-Nitride Light-Emitting Devices

Synthesis and Luminescence Properties of Amber Emitting La7Sr[Si10N19O3] : Eu2+ and Syntheses of the Substitutional Variants RE8‐xAEx[Si10N20‐xO2+x] : Eu2+ with RE=La, Ce; AE=Ca, Sr, Ba; 0≤x≤2

Agent-Based Modeling for By-Product Metal Supply—A Case Study on Indium

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Synthesis and Luminescence Properties of Amber Emitting La₇Sr[Si₁₀N₁₉O₃] : Eu²⁺ and Syntheses of the Substitutional Variants RE_8‐xAE_x[Si₁₀N_20‐xO_2+x] : Eu²⁺ with RE=La, Ce; AE=Ca, Sr, Ba; 0≤x≤2