Energy Relaxation Rates in AlInN/AlN/GaN Heterostructures

Tiraş, E.; Ardalı, Şükrü; Arslan, Engin; Özbay, Ekmel

doi:10.1007/s11664-012-2158-7

Cited by 6 publications

(2 citation statements)

References 60 publications

(131 reference statements)

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“…In cases where the difference in the 2 nd and 1 st subband electron states (ε 2 -ε 1 ) is less than the optical phonon energy (hω op ), a significant enhancement of the 2DEG mobility is expected due to the contribution of inter-subband transitions. 21 However, in our samples the estimated 22 hω op is of ∼ 91 meV which is significantly lower than the estimated values 23 of ε 2 -ε 1 of ∼137 meV and ∼119 meV obtained for samples A and B respectively. Hence the scattering due to inter-subband transitions is neglected.…”

Section: Resultscontrasting

confidence: 82%

Comprehensive magnetotransport characterization of two dimensional electron gas in AlGaN/GaN high electron mobility transistor structures leading to the assessment of interface roughness

Mishra¹,

Sharma²,

Manchanda³

et al. 2014

AIP Advances

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Magnetotransport in two distinct AlGaN/GaN HEMT structures grown by Molecular Beam Epitaxy (MBE) on Fe-doped templates is investigated using Shubnikov de-Haas Oscillations in the temperature range of 1.8–6 K and multicarrier fitting in the temperature range of 1.8–300 K. The temperature dependence of the two dimensional electron gas mobility is extracted from simultaneous multicarrier fitting of transverse and longitudinal resistivity as a function of magnetic field and the data is utilized to estimate contribution of interface roughness to the mobility and the corresponding transport lifetime. The quantum scattering time obtained from the analysis of Shubnikov de Haas Oscillations in transverse magnetoresistance along with the transport lifetime time were used to estimate interface roughness amplitude and lateral correlation length. The results indicate that the insertion of AlN over layer deposited prior to the growth of GaN base layer on Fe doped GaN templates for forming HEMT structures reduced the parallel conduction but resulted in an increase in interface roughness.

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Section: Resultscontrasting

confidence: 82%

Comprehensive magnetotransport characterization of two dimensional electron gas in AlGaN/GaN high electron mobility transistor structures leading to the assessment of interface roughness

Mishra¹,

Sharma²,

Manchanda³

et al. 2014

AIP Advances

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“…Analysis of the power loss mechanism due to acoustic phonon scattering has been carried out in the low-and hightemperature regimes in previous reports [15][16][17][18][29][30][31][32]. At the low-temperature regime (Bloch-Grüneisen regime), the phonon population diminishes and the Pauli exclusion principle determines the allowed scattering process.…”

Section: Analyzing the Power Loss Mechanisms Of Hot Electrons In 2dmentioning

confidence: 99%

Power loss mechanisms in n-type modulation-doped AlGaAs/GaAsBi quantum well heterostructures

Donmez

Aydın

Ardalı

et al. 2020

Semicond. Sci. Technol.

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We report on the power loss mechanisms of hot electrons in as-grown and annealed n-type modulation-doped Al 0.15 Ga 0.85 As/GaAs 1-x Bi x (x = 0 and 0.04) quantum well structures considering acoustic phonon interactions via the deformation potential (non-polar) and piezoelectric (polar) scatterings. The two-dimensional (2D) electron gas is heated by applying various electric fields under a steady-state magnetic field, and the effect of the applied electric field on the Shubnikov de Haas (SdH) oscillations is analyzed to investigate the power loss mechanism. The temperature of hot electrons (T e ) has been obtained by comparing the lattice temperature and applied electric field dependencies of the SdH oscillation amplitude. The hot electron temperature is almost the same for both Bi-free and Bi-containing samples except for the sample annealed at a higher temperature (700 • C) than the growth temperature of GaAsBi. The electron temperature dependence of power loss is analyzed using current theoretical analytic models derived for 2D semiconductors. We find that energy relaxation occurs in the intermediate temperature regime, including mixing of piezoelectric and deformation potential scattering. The power loss of hot electrons is found to be proportional to (T γ e − T γ L ) with γ in the range from 2.4 to 4.2, which indicates that the hot electron relaxation is due to acoustic phonon scatterings via unscreened deformation potential and piezoelectric scattering. It is found that deformation potential scattering is dominant over piezoelectric scattering in the Bi-free sample, while the incorporation of Bi into the GaAs lattice makes these processes comparable. After thermal annealing at lower than growth temperature (350 • C), the scattering mechanism switches from deformation potential to piezoelectric scattering. After thermal annealing at higher than growth temperature (700 • C), the theoretical model does not fit to the experimental results due to degradation of the sample.

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The comprehensive investigation of barrier layers on power loss mechanisms in AlGaN/GaN HEMT structures

Ardali,

Sonmez,

Lisesivdin

et al. 2024

Materials Science and Engineering: B

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Energy Relaxation Rates in AlInN/AlN/GaN Heterostructures

Cited by 6 publications

References 60 publications

Comprehensive magnetotransport characterization of two dimensional electron gas in AlGaN/GaN high electron mobility transistor structures leading to the assessment of interface roughness

Comprehensive magnetotransport characterization of two dimensional electron gas in AlGaN/GaN high electron mobility transistor structures leading to the assessment of interface roughness

Power loss mechanisms in n-type modulation-doped AlGaAs/GaAsBi quantum well heterostructures

The comprehensive investigation of barrier layers on power loss mechanisms in AlGaN/GaN HEMT structures

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