Energy loss straggling of 1.4–10 MeV/u heavy ions in gases

Geißel, H.; Laichter, Y.; Schneider, W.F.W.; Armbruster, P.

doi:10.1016/0167-5087(83)91325-x

Cited by 18 publications

(2 citation statements)

References 23 publications

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“…Geissel et al [41,42] measured mean energy losses and straggling for several ions in gases and solids and energies from 0.5 -10 MeV/u. Although the main topic in that study has been the density effect in the mean energy loss, straggling data are reported in noble gases and nitrogen for Pb, Xe and Kr ions, several of which lie an order of magnitude above the Bohr value.…”

Section: Comparison With Previous Measurementsmentioning

confidence: 99%

Energy-loss straggling of 2–10 MeV/u Kr ions in gases

et al. 2013

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Abstract. Measurements have been performed on a time-of-flight setup at the Jyväskylä K130 cyclotron, aiming at energy-loss straggling of heavy ions in gases. Theoretical predictions based on recently developed theory as well as an empirical interpolation formula predict that straggling can be more than ten times higher than Bohr straggling in the MeV/u regime. Our measurements with up to 9.3 MeV/u Kr ions on He, N2, Ne and Kr targets confirm this feature. Our calculations show the relative contributions of linear straggling, bunching including packing, and charge exchange. Our results for stopping cross sections are compatible with values from the literature.

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Section: Comparison With Previous Measurementsmentioning

confidence: 99%

Energy-loss straggling of 2–10 MeV/u Kr ions in gases

et al. 2013

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“…According to Geissel et al [7] the range straggling contribution to ui is proportional to the total energy loss A E due to stopping. We used the formula as proposed by Habraken et al [5]: with ub the energy width of the particle beam.…”

Section: Comparisonmentioning

confidence: 99%

Hydrogen distribution in oxynitride/oxide structures

Elferink

Heide

Bik

et al. 1987

Applied Surface Science

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Silicon oxynitridefilms with five different O/N ratios were deposited with low pressure chemical vapor deposition on a silicon substrate covered with an oxide. The films were subjected to subsequent post-deposition anneals in N, and H, at 1000°C, and a H plasma at 300 OC to obtain information about the hydrogen chemistry. The overall film compositions were determined with elastic recoil detection. The resonant reaction 15N('H, cyy)"C was used to obtain hydrogen depth profiles. The hydrogen depth profiles are characterized by a value for the bulk concentration and width of the interfacial region. We found that the stability of the hydrogen in the bulk has a maximum for O/N = 0.32. From the measured interfacial widths we deduced that for low values of O/N the stability of hydrogen in the interfacial region is relatively large. For intermediate values of O/N the stability of the hydrogen in the bulk and the interfacial region do not differ significantly, while for high O/N a relatively low stability of the interfacial hydrogen is observed. The O/N dependence of the stability of the interfacial hydrogen is consistent with the bulk stability if we assume that the interfacial oxynitride is oxygen enriched as compared to the bulk oxygen concentration.

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Application of Elastic Recoil Detection in Materials Analysis

Arnoldbik

Habraken

1995

Application of Particle and Laser Beams in Materials Technology

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Energy loss straggling of 1.4–10 MeV/u heavy ions in gases

Cited by 18 publications

References 23 publications

Energy-loss straggling of 2–10 MeV/u Kr ions in gases

Energy-loss straggling of 2–10 MeV/u Kr ions in gases

Hydrogen distribution in oxynitride/oxide structures

Application of Elastic Recoil Detection in Materials Analysis

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