Energy loss spectroscopy of RuO2 thin films

Abstract

The dielectric constant and the reflectivity spectrum of polycrystalline RuO2 films, grown by pulsed laser deposition, are presented as deduced by optical reflection and electron energy-loss spectroscopy. The similarities of these spectra with those obtained on single crystals, suggest that the production of RuO2 by laser ablation is a very good tool in obtaining films with electronic and structural characteristics equivalent to those of the bulk material.

In Situ Transmission Electron Microscopy Study of Electrochemical Lithiation and Delithiation Cycling of the Conversion Anode RuO2

“…After lithiation, the Ru-M 4,5 edge increased while the Ru M 3,2 edge decreased. 37,38 There is little work available in the literature that discusses the differences in the EELS spectrum for Ru and RuO 2 , making it difficult to quantitatively determine if the changes seen in the Ru-M 4,5 and Ru-M 3,2 edges indicate a change from RuO 2 to Ru. However, on the basis of the EDPs in Figure 2 and the Li EELS spectra, we conclude that fully lithiated RuO 2 nanowires consist of Ru/Li 2 O.…”

A Ru(II) η3-Allylic Complex as a Novel Precursor for the CVD of Ru- and RuO2-Nanostructured Thin Films

“…Ruthenium dioxide, a transition-metal oxide with rutile structure, has been used as a redox catalyst for inorganic and organic reactions and as a material for thick film resistors . It possesses metallic conductivity between 150 and 300 K and has been used as metallic contact to high dielectric constant materials such as Pb(Zr, Ti)O 3 and (Ba, Sr)TiO 3 . − Moreover, RuO 2 thin films can be successfully used as diffusion barriers between Al and Si in very-large scale integrated circuits (VLSI) …”

Nanowire and nanocable junction capacitances: Results for metal and semiconducting oxides

“…using a relative permittivity ε NC = 3.69 which is a compromise between the core ε SiO 2 = 2.15 at 546.1 nm [24], and that of RuO 2 with ε RuO 2 (E > 2 eV) 3, 4 < |ε RuO 2 (E = 1 eV)| < 6, and 2 < ε RuO 2 ,∞ < 3, where ε RuO 2 ,∞ is the high frequency dielectric constant [25][26][27]. This choice will be utilized throughout the remainder of the Letter for the nanocable.…”