Energy levels and degeneracy ratios for magnesium in n-type silicon

Ohta, Eiji; Sakata, Makoto

doi:10.1016/0038-1101(79)90144-8

Cited by 26 publications

(16 citation statements)

References 15 publications

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“…This is probably due to a shallow impurity band located 20 meV below the bulk conduction band. 28 Meanwhile, the sheet carrier density approached a constant value of 5.8ϫ 10 13 cm −2 below 40 K. This observation is consistent with reported data, 20,29 suggesting that the contribution of bulk carriers has been partially suppressed, and the surface becomes dominant at very low temperatures.…”

supporting

confidence: 90%

Epitaxial growth of high mobility Bi2Se3 thin films on CdS

Kou

Xiu

et al. 2011

Applied Physics Letters

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We report the experiment of high quality epitaxial growth of Bi2Se3 thin films on hexagonal CdS (0001) substrates using a solid source molecular-beam epitaxy system. Layer-by-layer growth of single crystal Bi2Se3 has been observed from the first quintuple layer. The size of surface triangular terraces has exceeded 1 mu m. Angle-resolved photoemission spectroscopy clearly reveals the presence of Dirac-cone-shape surface states. Magneto-transport measurements demonstrate a high Hall mobility of similar to 6000 cm(2)/V s for the as-grown Bi2Se3 thin films at temperatures below 30 K. These characteristics of Bi2Se3 thin films promise a variety of potential applications in ultrafast, low-power dissipation devices. (C) 2011 American Institute of Physics. [doi:10.1063/1.3599540

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supporting

confidence: 90%

Epitaxial growth of high mobility Bi2Se3 thin films on CdS

Kou

Xiu

et al. 2011

Applied Physics Letters

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“…This contamination was found in similar large concentration also in the starting substrate measured as a reference, so this defect is not related to the Mg 2 Si reaction. The DLTS peaks below 260 K temperature are dominated by the freezeout of free carriers in the top layer, which can be explained by the Mg related donor levels below the conduction band [13,14] and by the presence of the contamination in the substrate. 2 Si layer have been determined.…”

Section: Figurementioning

confidence: 96%

“…We suppose that this effect is due to point defects related to Mg, which has levels at about 100 meV and 250 meV below the conduction band [13,14], and to freezeout of carriers on these defect sites at low temperature. The deep level defects were measured by DLTS repetition rate scans using 1.6 V reverse bias and 0.2 V, 5 µs filling pulses at different temperatures (Fig.…”

Section: Figurementioning

confidence: 99%

Growth, structure, optical and electrical properties of Si/2D Mg₂Si/Si(111) double heterostructures and Schottky diodes on their base

Galkin

Dózsa

Dotsenko

et al. 2013

Phys. Status Solidi C

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Mg2Si layers were grown on silicon by RDE at 150 °C and by SPE at 160 °C, and they were covered by silicon cap grown by MBE at 150‐180 °C. The silicide layers and the silicon cap were investigated by in situ and ex situ methods. The 2D Mg2Si layer continuity and electrical properties were conserved during cap growth. The point defects in the structure are dominated by contamination of the substrate and by diffusion of the not reacted Mg into silicon. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Хотя результаты этих работ демонстрируют существенный разброс, можно выделить три группы уровней с энергиями активации в диапазонах 0.18−0.25, 0.37−0.40 и 0.54−0.64 эВ. Первая группа может быть связана со вторым донорным уровнем Mg i , вторая близка к уровню E c − 0.40 эВ, обнаруженному в компенсированном Si : Mg по эффекту Холла [15], тогда как близкие к середине запрещенной зоны уровни третьей группы наблюдались только методом DLTS. Отметим, что использование нестабильных изотопов Mg позволило установить, что центры с уровнями 0.22, 0.37, 0.54 и 0.64 эВ включают в свой состав один атом магния [14].…”

Section: Introductionunclassified

Исследование энергетического спектра кристаллов Si:Mg методом DLTS

Ярыкин¹,

Shuman²,

Portsel³

et al. 2019

Физика И Техника Полупроводников

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Electrically active centers in n -type magnesium-doped silicon crystals are studied by deep-level transient spectroscopy (DLTS). Magnesium is introduced by diffusion from a metal film on the surface at 1100°C. It is found that two levels with a similar concentration of ~6 × 10^14 cm^–3 dominate in the DLTS spectrum; the value approximately corresponds to the interstitial magnesium (Mg_ i ) concentration expected from diffusion conditions and published data on the Hall effect. The dependence of the electron emission rate from these levels on the electric-field strength agrees qualitatively with the Poole–Frenkel effect, which indicates the donor nature of both levels, although the absolute value of the effect differs from theoretical value. The activation energies of these levels found by the extrapolation of emission rates measured at various temperatures to zero field are 112 and 252 meV, which coincides within the accuracy with energies of ground states of the first and second donor levels of Mg determined previously from optical absorption. Thus, it is shown that when using high-quality initial material and the selected diffusion mode, interstitial magnesium atoms are the dominant centers with levels in the upper half of the band gap.

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Energy levels and degeneracy ratios for magnesium in n-type silicon

Cited by 26 publications

References 15 publications

Epitaxial growth of high mobility Bi2Se3 thin films on CdS

Epitaxial growth of high mobility Bi2Se3 thin films on CdS

Growth, structure, optical and electrical properties of Si/2D Mg₂Si/Si(111) double heterostructures and Schottky diodes on their base

Исследование энергетического спектра кристаллов Si:Mg методом DLTS

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Energy levels and degeneracy ratios for magnesium in n-type silicon

Cited by 26 publications

References 15 publications

Epitaxial growth of high mobility Bi2Se3 thin films on CdS

Epitaxial growth of high mobility Bi2Se3 thin films on CdS

Growth, structure, optical and electrical properties of Si/2D Mg2Si/Si(111) double heterostructures and Schottky diodes on their base

Исследование энергетического спектра кристаллов Si:Mg методом DLTS

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Growth, structure, optical and electrical properties of Si/2D Mg₂Si/Si(111) double heterostructures and Schottky diodes on their base