Energy-imbalance mechanism of domain wall motion induced by propagation spin waves in finite magnetic nanostripe

Zhu, Jun; Han, Zhaoyan; Su, Yuanchang; Jia, Hu

doi:10.1016/j.jmmm.2014.06.015

Cited by 3 publications

(2 citation statements)

References 25 publications

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“…It suggest that the SW-induced TW oscillation and the reflection of the SW by TW are related to each other, and both of them are the expressions of the interaction between the SW and the TW. Compared to the previous literature, our results may support the linear-momentum-transfer mechanism [25,26] and the energy-imbalance mechanism [31].…”

Section: Introductionsupporting

confidence: 77%

“…Many numerical works has studied the change of SW amplitude when passing through the domain wall, in order to clarify the interaction between SW and DW [20,22,27]. Though the underlying mechanism of SW-driven DW motion has a few candidates like: reflection and/or transmission of SW at DW [20-23, 26, 30], macroscopically thermodynamic mechanism [31], etc, it is still not clear about the sensitive frequency dependence of DW velocity. So, what happens when SW acts on a DW is still an important issue.…”

Section: Introductionmentioning

confidence: 99%

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Direct imaging of the interaction between spin wave and transverse wall in magnetic nanostrip

Zhou

Su²,

Xi³

et al. 2018

J. Phys.: Condens. Matter

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By micromagnetic simulations, the dynamical interaction between spin wave (SW) and a transverse wall (TW) in a magnetic nanostrip is studied. We find the dynamical interaction can be directly demonstrated by SW-induced TW oscillation, which can be obtained by calculating the total magnetic moment within the area of TW as a function of time. Two cases of the initial TW, in equilibrium state and in metastable state, are investigated and compared. Before SW reaches TW, the metastable TW oscillates naturally with a constant frequency, whereas the equilibrium TW does not oscillate. After SW acts on TW, both the metastable TW and the equilibrium TW will oscillate with a frequency that always equal to the frequency of the applied SW. The amplitude of the SW-induced TW oscillation for both the metastable case and the equilibrium case strongly depends on the frequency of the applied SW. Through tuning the frequency of the applied SW, we confirm that the natural oscillation of the metastable TW, which is independent of the applied SW, will not affect the amplitude of the SW-induced TW oscillation and the velocity of the TW motion in compare with those of the equilibrium TW. Interestingly, the frequency-response curves of the SW-induced TW oscillations display multiple resonance peaks. Moreover, we find the frequency-response curves of the SW-induced TW oscillation, SW reflection coefficient and TW velocity driven by SW share the same multiple-resonance property. It may suggest the SW-induced TW oscillation in the domain wall plays an important role in the SW-driven TW motion.

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Section: Introductionsupporting

confidence: 77%

Section: Introductionmentioning

confidence: 99%

Direct imaging of the interaction between spin wave and transverse wall in magnetic nanostrip

Zhou

Su²,

Xi³

et al. 2018

J. Phys.: Condens. Matter

Self Cite

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Influence of temperature on current-induced domain wall motion and its Walker breakdown

Fan

Jia

et al. 2016

Journal of Magnetism and Magnetic Materials

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Influences of material defects and temperature on current-driven domain wall mobility

Zhu¹,

Lü-Chao²,

Su³

et al. 2016

Acta Phys. Sin.

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Current-induced domain wall motion, which has potential application in the next-generation data storage and logic device, has attracted much interest in recent years. However, how the material defect and its joule heat influence current-driven domain wall motion in magnetic nanostripe is still unclear. This paper is to deal with these issues by using the Landau-Lifshitz-Gilbert spin dynamics. The results show that the material defect can pin domain wall motion and this pinning effect strongly depends on the defect concentration, location and shape. The pinning effect induced by the defect on domain wall motion results in the increase of threshold current, and the domain wall moves steadily and continuously. Specifically, the probability for domain wall motion induced by pinning effect is nonlinearly increasing with the increase of defect concentration. Namely, the increasing of the pinning ability with the increase of the defect concentration becomes fades away. Initially, when the defect is near to domain wall, the pinning ability is obvious. However, the pinning ability is not linearly increasing with the decrease of the initial distance between the defect and the domain wall. The results also show that the single defect is larger, the probability for domain wall motion induced by defect pining is bigger. Moreover, the material defect can suppress the domain wall trending toward breakdown and make domain wall move faster, but the suppressing ability is not obviously increasing with the increase of the defect concentration. On the other hand, the temperature field can remove the pinning phenomenon, which will result in the threshold current decrease. The decrease of the threshold current is of benefit to the working of the data storage and logic device. Also the temperature field can suppress the domain wall trending toward breakdown, but the suppressing ability is less than that of the defect. In addition, the Joule heat around defects can obviously eliminate the pinning effect of the defects, so the pinning effect for a few defects on current-induced domain wall motion can be ignored. Further analysis indicates that these effects are due to the change of the out-of-plane magnetization of the domain wall induced by the material defects and the temperature field, because the velocity of the domain wall motion induced by the applied current greatly depends on the out-of-plane magnetization of the domain wall.

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Energy-imbalance mechanism of domain wall motion induced by propagation spin waves in finite magnetic nanostripe

Cited by 3 publications

References 25 publications

Direct imaging of the interaction between spin wave and transverse wall in magnetic nanostrip

Direct imaging of the interaction between spin wave and transverse wall in magnetic nanostrip

Influence of temperature on current-induced domain wall motion and its Walker breakdown

Influences of material defects and temperature on current-driven domain wall mobility

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