Energy harvesting using martensite variant reorientation mechanism in a NiMnGa magnetic shape memory alloy

Abstract

Magnetic shape memory alloys demonstrate significant potential for harvesting waste mechanical energy utilizing the Villari effect. In this study, a few milliwatts of power output are achieved taking advantage of martensite variant reorientation mechanism in Ni51.1Mn24Ga24.9 single crystals under slowly fluctuating loads (10Hz) without optimization in the power conversion unit. Effects of applied strain range, bias magnetic field, and loading frequency on the voltage output are revealed. Anticipated power outputs under moderate frequencies are predicted showing that the power outputs higher than 1W are feasible.

Stable magnetostructural coupling with tunable magnetoresponsive effects in hexagonal ferromagnets

“…These effects are of interest for many potential technological applications like magnetic actuators 13,14 , sensors 15 , energy-harvesting devices 16 and solid-state magnetic refrigeration 17 . In these functionalities, the magnetostructural coupling between the structural and the magnetic transition has an essential role.…”

Recent progress in Heusler-type magnetic shape memory alloys

“…In addition, they found a net MFIS of 1.8 % by rotating the field around the sample from the [001] to [100] directions. These works stimulate numerous investigations on Ni-Mn-Ga shape memory alloys [41,45,[48][49][50][51][52][53][54][55][56][57][58].…”

Magnetic and transport properties of Ni2MnGa–BaTiO3 metal–insulator particulate composite with percolation threshold

“…NMG is the Heusler alloy with L2 1 structure, which is the body-centered cubic with a face-centered superlattice, and BTO has perovskite structure with general formula ABO3, which consists of a framework of Ti octahedra [21,22]. Ni-Mn-Ga (NMG) is selected because it is a ferromagnetic shape memory alloy (SMA) having large magnetic field induced strain through structure transition, and is used as actuators, sensors and in energy-harvesting devices [23][24][25][26][27][28][29][30]. While, BaTiO 3 (BTO) is chosen as an insulator phase for M/I composite due to its excellent dielectric and ferroelectric properties [22,31,32].…”