Energy Gaps in Graphene Nanoribbons

Son, Young‐Woo; Cohen, Marvin L.; Louie, Steven G.

doi:10.1103/physrevlett.97.216803

Cited by 4,618 publications

(2,697 citation statements)

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“…For example, ballistic room-temperature transistors [3][4][5] and carbon-based spintronic devices [6][7][8][9][10] are two tantalizing possibilities which could one day be realized in a graphene nanodevice. First though, a reliable method must be found to controllably produce graphene nanostructures with specific sizes, geometries, and defined crystallographic edges.…”

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confidence: 99%

Anisotropic Etching and Nanoribbon Formation in Single-Layer Graphene

et al. 2009

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, many of which can only be realized by confining graphene into nanoribbons and other nanostructures. For example, ballistic room-temperature transistors 3-5 and carbon-based spintronic devices 6-10 are two tantalizing possibilities which could one day be realized in a graphene nanodevice. First though, a reliable method must be found to controllably produce graphene nanostructures with specific sizes, geometries, and defined crystallographic edges. Theoretical predictions indicate that a graphene nanoribbon with zig-zag edges can behave as a half-metal 6, 7 which, paired with graphene's long spin relaxation time 11 , could be used to produced spin-valves and other spintronic devices. In addition, nanosized geometric structures such as triangles with zig-zag edges are predicted to have a net nonzero spin 8,9,12, 13 , furthering the potential use of graphene as a canvas for spintronic circuits. For field effect transistor applications, quantum confinement induces a band gap in the normally gapless graphene 10,14,15 , but the potential performance of the device depends strongly on the edge structure as well 4,16,17 . . Indeed, previous studies of catalytic gasification of carbon found that catalytic metal nanoparticles would sometimes etch graphite along crystallographic directions, creating both armchair and zigzag edges [27][28][29][30][31] .

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Anisotropic Etching and Nanoribbon Formation in Single-Layer Graphene

et al. 2009

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“…[51][52][53] For example, it is known that mechanical straining can alter the band gaps of graphene nanoribbons significantly. [51,[54][55][56][57][58][59] Similarly, it has also been shown that straining can change the band gaps for h-BN nanoribbons [15,18] and large area h-BN. [60] We note that in reference, [60] the authors investigated the bandgap as a function of strain to the strain where the bandgap eventually approaches zero.…”

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confidence: 99%

Mechanics and Mechanically Tunable Band Gap in Single-Layer Hexagonal Boron-Nitride

Wang

Wei

et al. 2013

Materials Research Letters

149

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Current interest in two-dimensional materials extends from graphene to others systems like single-layer hexagonal boron-nitride (h-BN), for the possibility of making heterogeneous structures to achieve exceptional properties that cannot be realized in graphene. The electrically insulating h-BN and semi-metal graphene may open good opportunities to realize a semiconductor by manipulating the morphology and composition of such heterogeneous structures. Here we report the mechanical properties of h-BN and its band structures tuned by mechanical straining by using the density functional theory calculations. The elastic properties, both the Young's modulus and bending rigidity for h-BN, are isotropic. However, its failure strength and failure strain show strong anisotropy. We reveal that there is a bi-linear dependence of band gap on the applied tensile strains in h-BN. Mechanical strain can tune single-layer h-BN from an insulator to a semiconductor, with a band gap in the 4.7eV to 1.5eV range.

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“…In particular, for zigzag graphene nanoribbons (ZGNRs) terminated with one hydrogen atom on each zigzag edge, there are quite a few localized edge states near the Fermi energy level on both edges. Such localized edge states can lead to a spin induced energy gap [113] providing a significant effect on the electronic and transport properties [114]. The electronic and transport properties are thus very sensitive to the atomic structures and chemical modification of the edges.…”

Section: Graphenementioning

confidence: 99%

Biomolecules and Pure Carbon Aggregates: An Application Towards “Green Electronics”

Srivastava¹

2018

Green Electronics

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Abstract"Green electronics" is a novel scientific term which aims to identify the compounds of natural origin (economically safe and biodegradable) and establish economically efficient route for production of synthetic materials. The purpose of green electronics is to create path for the production of human and environmental friendly electronics and the integration of electronics with living tissue in particular. These researches may help to fulfill not only the organic electronics to deliver low cost energy efficient materials and devices, but also achieve unimaginable functionalities for electronics. In this chapter we have considered the molecular electronic devices biomolecules: deoxyribonucleic acid (DNA) and pure carbon aggregates: (carbon nanotubes (CNTs)/graphene), their properties and applications.

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Energy Gaps in Graphene Nanoribbons

Cited by 4,618 publications

References 40 publications

Anisotropic Etching and Nanoribbon Formation in Single-Layer Graphene

Anisotropic Etching and Nanoribbon Formation in Single-Layer Graphene

Mechanics and Mechanically Tunable Band Gap in Single-Layer Hexagonal Boron-Nitride

Biomolecules and Pure Carbon Aggregates: An Application Towards “Green Electronics”

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