Energy gaps and optical phonon frequencies in InP_1−xSb_x

Abstract

We present a theoretical investigation of the energy band-gaps and vibrational properties of InP 1−x Sb x semiconducting alloys in the zinc-blende structure. For this purpose a pseudopotential scheme within the virtual crystal approximation that takes into account the effects of compositional disorder, combined with the Harrison bond orbital model are used. In general, our results are in good agreement with the available experimental values to within a few per cent. The absorption at the optical gaps indicates that the material of interest is a direct to band-gap semiconductor for the whole range of the Sb content. It is found that both the fundamental band-gap and the optical phonon frequencies change non-linearly with varying the composition x. The information derived from the present study predicts that InP 1−x Sb x properties cross very important technological infrared and mid-infrared spectral regions.

Effect of precursor flux on compositional evolution in InP1−xSbx nanowires grown via self-catalyzed vapor–liquid–solid process

“…The data is obtained from 9 SAED patterns and 6 FTs. Assuming that Vegard's law [35] is valid for the InP-InSb system, [36][37][38][39] and using the lattice constants of ZB-structured InP (5.87Å) and InSb (6.48Å), [40,41] the corresponding Sb concentrations (x) in the InP 1 À x Sb x alloy wires are 10 75 at%, 1676 at%, and 27722 at%, respectively [42]. (The larger uncertainties associated with the Sb content in the 4Q wires are not an experimental error but are due to compositional oscillations along the nanowire growth direction [43].)…”

Lattice Vibration and Polaron Properties of InSb Under Pressure

“…in Ref. []. Our results concerning the energy band‐gap, optical refractive index, optical high‐frequency dielectric constant and optical static dielectric constant for InSb at various pressures up to 2 GPa are given in Table .…”

Growth of InAsSb/InPSb heterojunctions for mid-IR detector applications

“…An alternative Al-free material is InP 1Àx Sb x , which is lattice matched to GaSb at a mole fraction of x ¼ 0.355 and can be grown by metalorganic vapor phase epitaxy (MOVPE). The bandgap for lattice matched growth of InPSb on GaSb is approximately 0.44 eV [3]. This compares with a room-temperature bandgap of 0.26 eV [4] for InAsSb lattice matched to GaSb.…”