Energy gap and band alignment for (HfO2)x(Al2O3)1−x on (100) Si

Yu, Hang; Li, M. F.; Cho, B. J.; Yeo, Chia Ching; Joo, Moon Sig; Kwong, D. L.; Pan, Ji Sheng; Ang, C. H.; Zheng, Jingjing; Ramanathan, Sasangan

doi:10.1063/1.1492024

Cited by 305 publications

(97 citation statements)

References 11 publications

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“…Similar result is reported from another group as shown in Fig. 3.17 [32]. These values are large enough to suppress the leakage current through the high-k film.…”

Section: Hafnium-aluminum-based Gate Dielectricssupporting

confidence: 92%

“…Therefore, homogeneous alloy structure was expected without the phase separation in this case. [32,107]. Ohta et al [119] used XPS measurement in order to extract the band-gap energy and the band alignment to Si using HfAlO with the cation ratio Hf/Hf+Al of 0.3.…”

Section: Hafnium-aluminum-based Gate Dielectricsmentioning

confidence: 99%

“…Another common method of extracting the band offset is IPES (internal photo-emission spectroscopy) measurement: When electrons are provided with sufficient energy to overcome the band offset, they are detected as the current [30]. The extracted conduction band offset of HfO 2 was 1.2 eV [31] or 1.9 eV [32]. This relatively large value along with the large dielectric constant promises a dramatic decrease in leakage current by 4 or 5 orders of magnitude through HfO 2 , compared to that through SiO 2 with the same EOT [1,2].…”

Section: Bandgap and Band Alignment With Siliconmentioning

confidence: 99%

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Hafnium-Based Gate Dielectric Materials

Nishiyama

2013

High Permittivity Gate Dielectric Materials

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In this chapter, we focus on hafnium-based gate dielectrics. HfO 2 is regarded as the most promising material for the high-k gate dielectrics owing to its large dielectric constant and large band-gap energy. In the first part of this chapter, these characteristics are addressed in a comparison with SiO 2 and other high-k materials. Thermal stability is a major issue for the application of high-k materials to MOSFETs in LSIs. Although HfO 2 satisfies this requirement, severer process conditions may cause problems even with this material. Suppression of these issues is also addressed in the second part of this chapter. In order to enhance the characteristics of HfO 2 , transformation of the monoclinic phase to the tetragonal and the cubic phases with larger dielectric constant has been pursued recently. We mention the issue in the last part of this chapter. Introductory Remarks and Brief Outline of the ChapterSince the proposal of the materials in the early 2000s [1-3], hafnium-based gate dielectrics have been regarded as the most promising materials for the application to large scale integrations (LSIs). In 2007, Intel announced the start of manufacturing of 45 nm-node LSIs with high-k/metal gate stack, with the remark that the world's first high-k material in commercial production was hafnium-based [4].There are several characteristics that the high-k materials should meet for the application to metal oxide semiconductor field effect transistors (MOSFETs) in LSIs. First, we clarify the properties so that readers can understand their A. Nishiyama

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“…Similar result is reported from another group as shown in Fig. 3.17 [32]. These values are large enough to suppress the leakage current through the high-k film.…”

Section: Hafnium-aluminum-based Gate Dielectricssupporting

confidence: 92%

Section: Hafnium-aluminum-based Gate Dielectricsmentioning

confidence: 99%

Section: Bandgap and Band Alignment With Siliconmentioning

confidence: 99%

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Hafnium-Based Gate Dielectric Materials

Nishiyama

2013

High Permittivity Gate Dielectric Materials

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“…The primary interest here lies in the compositions of the anodic films and the migration behaviours of Al 3+ and Hf 4+ ions. The films may also be of interest as dielectrics, since hafnium oxide has attracted attention as a 'high-K' gate dielectric in metal oxide semiconductor transistors [12] and hafnia additions to alumina increase the dielectric constant [13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Formation of anodic films on sputtering-deposited Al–Hf alloys

Fogazza

Santamaria

Quarto

et al. 2009

Electrochimica Acta

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a b s t r a c tThe growth of barrier-type anodic films at high efficiency on a range of sputtering-deposited Al-Hf alloys, containing from 1 to 95 at.% Hf, has been investigated in ammonium pentaborate electrolyte. The alloys encompassed nanocrystalline and amorphous structures, the latter being produced for alloys containing from 26 to 61 at.% Hf. Except at the highest hafnium content, the films were amorphous and contained units of HfO 2 and Al 2 O 3 distributed relatively uniformly through the film thickness. Boron species were confined to outer regions of the films. The boron distributions suggest that the cation transport number decreases progressively with increasing hafnium concentration in the films, from ∼0.4 in anodic alumina to ∼0.2 for a film on an Al-61 at.% Hf alloy. The distributions of Al 3+ and Hf 4+ ions in the films indicate their similar migration rates, which correlates with the similarity of the energies of Al 3+ -O 2− and Hf 4+ -O 2− bonds. For an alloy containing ∼95 at.% Hf, the film was largely nanocrystalline, with a thin layer of amorphous oxide, of non-uniform thickness, at the film surface. The formation ratios for the films on the alloys changed approximately in proportion to the hafnium content of the films between the values for anodic alumina and anodic hafnia, ∼1.2 and 1.8 nm V −1 respectively.

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“…3(b) support this interpretation. After IB irradiation, a decrease in intensity and peak shifting toward a higher binding energy of the La 3d peak was observed [20,21]. The IB incident energy also affects the breaking of La-O bonds.…”

Section: Resultsmentioning

confidence: 97%

Solution-Derived Hafnium Lanthanum Oxide Films Prepared Using Ion-Beam Irradiation and Their Applications as Alignment Layers for Twisted-Nematic Liquid Crystal Displays

Oh¹

2016

Transactions on Electrical and Electronic Materials

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We present the alignment characteristics of LC (liquid crystal) molecules on solution-derived HLO (hafnium lanthanum oxide) films fabricated using IB (ion-beam) irradiation. We then demonstrated that LC molecules can be homogeneously and uniformly aligned on the HLO film irradiated at an IB incident energy of 1.2 keV. Physicochemical analysis methods such as atomic force microscopy and X-ray photoelectron spectroscopy were used to verify the LC alignment mechanism on the IB-irradiated HLO film. In addition, the electro-optical performance of a TN (twisted-nematic) cell fabricated using the IB-irradiated HLO film exhibited characteristics superior to those of the conventional TN cell fabricated using a rubbed polyimide layer.

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Energy gap and band alignment for (HfO2)x(Al2O3)1−x on (100) Si

Cited by 305 publications

References 11 publications

Hafnium-Based Gate Dielectric Materials

Hafnium-Based Gate Dielectric Materials

Formation of anodic films on sputtering-deposited Al–Hf alloys

Solution-Derived Hafnium Lanthanum Oxide Films Prepared Using Ion-Beam Irradiation and Their Applications as Alignment Layers for Twisted-Nematic Liquid Crystal Displays

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