Energy-dependent electron scattering via interaction with optical phonons in wurtzite crystals and quantum wells

Komirenko, S. M.; Stroscio, Michael A.; Dutta, Mitra

doi:10.1103/physrevb.61.2034

Cited by 55 publications

(33 citation statements)

References 11 publications

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“…Himmetoglu and co-workers find that at room temperature with moderate carrier concentration, this scattering mechanism dominates the mobility and that it has a strong and complex momentum dependence, 41 and a complex energy dependence may also be expected in analogy with other materials. 42 Furthermore, one expects acoustic phonon scattering, discussed above, to contribute to scattering in any material, and electron-electron scattering may also contribute for heavy doping and low temperature.…”

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confidence: 99%

Thermoelectric properties of n-type SrTiO3

Sun

Singh

2016

APL Materials

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We present an investigation of the thermoelectric properties of cubic perovskite SrTiO3. The results are derived from a combination of calculated transport functions obtained from Boltzmann transport theory in the constant scattering time approximation based on the electronic structure and existing experimental data for La-doped SrTiO3. The figure of merit ZT is modeled with respect to carrier concentration and temperature. The model predicts a relatively high ZT at optimized doping and suggests that the ZT value can reach 0.7 at T = 1400 K. Thus ZT can be improved from the current experimental values by carrier concentration optimization.

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confidence: 99%

Thermoelectric properties of n-type SrTiO3

Sun

Singh

2016

APL Materials

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“…For the sharp heterointerface system under consideration here, there are two distinct optical phonon classes, designated as interface (IF) and half-space (HS). They are dependent on the ordering of various phonon energy spectra in the nitride materials 1 (AlN), 2 (Al x ,Ga 1Kx N) and 3 (GaN) [20,21]. The interface modes are the evanescent modes with maximum amplitude at the interfaces.…”

Section: Resultsmentioning

confidence: 99%

Confinement of polar optical phonons in AlN/GaN superlattices

Medeiros

Albuquerque

Farias

et al. 2005

Solid State Communications

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“…They correspond to the extraordinary A 1 and E 1 phonons in irreducible representation at the Γ-point [6,7,21].…”

Section: Phonons In Bulk Zno Crystalsmentioning

confidence: 99%

Electron–phonon interaction in zinc oxide. Plasmon–optical phonon coupled modes

Husanu

2008

Physica Status Solidi (b)

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The effects of the electron–phonon interaction in zinc oxide depending on the free conduction band electron concentration are investigated. In n‐doped polar semiconductors, as the free carrier concentration is increased, the plasmonic mode associated to charge density fluctuations gradually approaches its frequency to the optical phonon ones. As a consequence, their interaction is materialized in coupled mode oscillations. Using a dielectric continuum model, applying the equation of motion technique for the operator associated to charge density fluctuations in ZnO, and taking into account the supplementary constraints introduced by its uniaxial symmetry, the response function of the system is obtained. In polar semiconductors with cubic crystalline structure there are two plasmon‐optical phonon coupled modes. It is shown that in ZnO, three such coupled modes appear. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Energy-dependent electron scattering via interaction with optical phonons in wurtzite crystals and quantum wells

Cited by 55 publications

References 11 publications

Thermoelectric properties of n-type SrTiO3

Thermoelectric properties of n-type SrTiO3

Confinement of polar optical phonons in AlN/GaN superlattices

Electron–phonon interaction in zinc oxide. Plasmon–optical phonon coupled modes

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