Energy dependence of the ion-induced sputtering yields of monatomic solids

Matsunami, N.; Yamamura, Y.; Itikawa, Yukikazu; Itoh, Noriaki; Kazumata, Yukio; Miyagawa, S.; Morita, Kenji; Shimizu, Ryuichi; Tawara, H.

doi:10.1016/0092-640x(84)90016-0

Cited by 754 publications

(256 citation statements)

References 9 publications

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“…Of particular interest are ions and fast neutrals with an energy beyond the sputtering threshold, which varies from 10 to 100 eV, depending on surface material and incident particle species. 4 Research on microdischarges leans heavily on discharge modeling tools, in view of experimental difficulties due to their small size. By the use of self-consistent fluid models, a good picture can be obtained of the electric fields and the particle densities and fluxes in microdischarges.…”

Section: Introductionmentioning

confidence: 99%

Energy distribution of ions and fast neutrals in microdischarges for display technology

Hagelaar

Kroesen

Klein

2000

Journal of Applied Physics

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In this work we present simple theoretical predictions as well as full Monte Carlo calculations of the energy distribution of the ion and fast neutral fluxes impinging on the materials that surround the microdischarges in plasma display panels and plasma addressed liquid crystal displays. We consider various rare gas ion species in different microdischarge designs. Often simple theoretical distribution functions are in good agreement with the results of Monte Carlo calculations. Under the influence of symmetric charge transfer collisions the ion energy distribution is essentially different from a Maxwellian distribution, and the ion motion is strongly orientated along the electric field. The flux of the fast neutrals formed by symmetric charge transfer is usually even larger than the ion flux itself.

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Section: Introductionmentioning

confidence: 99%

Energy distribution of ions and fast neutrals in microdischarges for display technology

Hagelaar

Kroesen

Klein

2000

Journal of Applied Physics

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“…Note that extending the upper limit of ) to N (24.59 eV) 22 is not practical due to extremely low He sputter yields. 23 Comparison with data in Figure 6 indicates that the approach described here is broadly applicable.…”

Section: Discussionmentioning

confidence: 75%

Strategy for tuning the average charge state of metal ions incident at the growing film during HIPIMS deposition

Greczyński

Petrov

Greene

et al. 2015

Vacuum

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Energy-and time-dependent mass spectrometry is used to determine the relative number density of singly-and multiply-charged metal-ion fluxes incident at the substrate during highpower pulsed magnetron sputtering (HIPIMS) as a function of the average noble-gas ionization potential. Ti is selected as the sputtering target since the microstructure, phase composition, properties, and stress-state of Ti-based ceramic thin films grown by HIPIMS are known to be strongly dependent on the charge state of Ti n+ (n = 1, 2, …) ions incident at the film growth surface.We find that the flux of Ti n+ with n > 2 is insignificant; thus, we measure the Ti 2+ /Ti + integrated flux ratio / at the substrate position as a function of the choice of noble gas --Ne, Ar, Kr, Xe, as well as Ne/Ar, Kr/Ar, and Xe/Ar mixtures --supporting the plasma. We demonstrate that by changing noble-gas mixtures, varies by more than two orders of magnitude with only a small change in . This allows the ratio / to be continuously tuned from less than 0.01 with Xe, which has a low first-ionization potential , to 0.62 with Ne which has a high . The value for Xe, = 12.16 eV, is larger than the first ionization potential of Ti, = 6.85 eV, but less than the second Ti ionization potential, = 13.62 eV. For Ne, however, = 21.63 eV is greater than both and . Therefore, the high-energy tail of the plasma-electron energy distribution can be systematically adjusted, allowing / to be controllably varied over a very wide range.corresponding author: grzgr@ifm.liu.se; phone: +46 13 28 1213

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“…1d). The depth was estimated by using the sputtering yield of pure vanadium of 3 keV Ar ion [11]. Carbon and oxygen with high content were contained in the near surface region of the cold rolled sample (Fig.1a).…”

Section: Methodsmentioning

confidence: 99%

Helium thermal desorption and retention properties of V–4Cr–4Ti alloy used for first wall of breeding blanket

Hirohata

Yamada

Yamauchi

et al. 2006

Fusion Engineering and Design

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Helium irradiation experiments of V-4Cr-4Ti alloy with various surface treatments were conducted in an Electron Cyclotron Resonance (ECR) ion irradiation apparatus.After helium ion irradiation at room temperature, the helium thermal desorption and retention properties were examined by thermal desorption spectroscopy (TDS). Ion energy of helium beam was 5 keV. Three groups of desorption peaks appeared at around 500, 850 and 1200 K in the TDS spectrum. After helium ion irradiation at ion fluence of 1x10 21 He/m 2 , the retained helium desorbed mainly at around 1200 K and all of the implanted helium atoms were retained. With increasing fluence up to 5x10 21 He/m 2 , the amount of helium desorbed at 500 K increased. For the polished samples with annealing at various temperatures, the desorption peak observed at around 500 K shifted to higher temperature region. Smallest retained amount of helium was observed in the V-alloy with polishing followed by annealing at 1373 K.

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Energy dependence of the ion-induced sputtering yields of monatomic solids

Cited by 754 publications

References 9 publications

Energy distribution of ions and fast neutrals in microdischarges for display technology

Energy distribution of ions and fast neutrals in microdischarges for display technology

Strategy for tuning the average charge state of metal ions incident at the growing film during HIPIMS deposition

Helium thermal desorption and retention properties of V–4Cr–4Ti alloy used for first wall of breeding blanket

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