Energy capability of SiC MOSFETs

Unger, Christian; Pfost, Martin

doi:10.1109/ispsd.2016.7520831

Cited by 18 publications

(14 citation statements)

References 17 publications

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“…In the literature, some values of crit at specific boundary conditions can also be found in [2][3][4][5][6][7][8] with devices of the same chip generations and manufacturer. They are in accordance with the displayed results in this article but often there is only one value of crit at completely different operating points or without concrete testing conditions given.…”

Section: Resultsmentioning

confidence: 99%

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A Structural Based Thermal Model Description for Vertical SiC Power MOSFETs under Fault Conditions

Maerz

Bertelshofer

Bakran

2016

Active and Passive Electronic Components

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The accurate prediction of the SiC MOSFET withstanding time for single fault events greatly influences the requirements for device protection circuits for these devices in power converter applications, like voltage source inverters or power electronic transformers. For this reason, a thermal model, based on the structural design and the physical dimensions of the chip as well as material properties of 4H-SiC, is proposed. This article gives a general description of the thermal behaviour of vertical SiC MOSFET under various driving and boundary conditions in case of a short-circuit event. The thermal model substitutes destructive tests of a device for an individual set of boundary conditions of an occurring fault event. The validity of the analytically parametrised thermal model is verified by experimental short-circuit tests of state-of-the-art vertical SiC MOSFETs for a set of various boundary conditions. The investigated thermal model can furthermore be used to standardise different gate-oxide degradation values from the literature for means of lifetime prediction of the gate oxide for an individual application under repetitive occurring fault or overload conditions. These manufacturer specific reported values measured with no standardised testing procedures can be translated into a maximum junction temperature, which is repeatedly reached. The thermal model therefore provides a unifying parameter for the gate-oxide lifetime calculation for an individual chip and application.

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Section: Resultsmentioning

confidence: 99%

“…At the same time, reliability of these devices under harsh operating conditions is still an issue [2][3][4][5][6][7][8]. One of its most important issues is the short-circuit (SC) robustness against single or repetitive faults events and overcurrent conditions.…”

Section: Introductionmentioning

confidence: 99%

A Structural Based Thermal Model Description for Vertical SiC Power MOSFETs under Fault Conditions

Maerz

Bertelshofer

Bakran

2016

Active and Passive Electronic Components

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“…No evidence of parasitic BJT activation is found and the failure could be delayed further by achieving a lower turn-off bias voltage in future generations. On the other hand, the relatively high saturation current of hitherto presented device concepts implies higher than ideal energy and stress levels involved in short-circuit events, to the detriment of the maximum pulse duration [5,18]. The implication is twofold: fast fault detection and removal circuits are needed and aging due to repetitive stress can be pronounced even if the faulty condition is promptly removed.…”

Section: Discussionmentioning

confidence: 99%

Transient out-of-SOA robustness of SiC power MOSFETs

Castellazzi

Fayyaz

Romano

et al. 2017

2017 IEEE International Reliability Physics Symposium (IRPS)

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Abstract-Beyond their main function of high-frequency switches in modulated power converters, solid-state power devices are required in many application domains to also ensure robustness against a number of overload operational conditions. This paper considers the specific case of 1200 V SiC power MOSFETs and analyses their performance under three main transient regimes at the edge of and out of their Safe Operating Area: unclamped inductive switching led avalanche breakdown; short-circuit; operation as current limiting and regulating devices. The results presented highlight both inherent major strengths of SiC over Si and areas for improvement by tailored device design. The paper aims to contribute useful indications for technology development in future device generations to better match widespread and varied application requirements.

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“…In literature, it is stated that the V TH subthreshold hysteresis is erased for gate biases beyond the V TH [1,3,4], but it seems that it is the case only for static measurements, where the equilibrium is achieved. Almost Short Circuit tests, with gate bias just above the threshold voltage, show that hysteresis is still present and has a great impact on the device performance [10]. The power dissipation in the device can be almost twice as high, but the testing conditions are far from real applications ones, since the applied gate bias does not provide the required overdrive and thus does not guarantee the lowest possible ONstate resistance.…”

Section: B Short Circuit Operationmentioning

confidence: 99%

SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation

Asllani¹,

Morel²,

Planson³

et al. 2018

2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles &Amp; Interna

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TH subthreshold hysteresis is an aspect of MOSFET's threshold instabilities that is gaining interests in last few years. As a matter of fact, reliability concerns are raised due to the fluctuation of the threshold voltage depending on the previous bias state. The subthreshold drain current, also called drain leakage current, is enhanced after a negative gate bias is applied to put the device in OFF-state. This phenomenon affects the static characteristics and might also change the dynamic behaviour of the devices, but such measurements have not yet been reported. This study reports the impact of the Hysteresis on the Short Circuit behaviour of a commercially available SiC MOSFET. A physical interpretation of the measurement is given in order to provide the fundamentals necessary for the evaluation of the reliability of these power devices.

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Energy capability of SiC MOSFETs

Cited by 18 publications

References 17 publications

A Structural Based Thermal Model Description for Vertical SiC Power MOSFETs under Fault Conditions

A Structural Based Thermal Model Description for Vertical SiC Power MOSFETs under Fault Conditions

Transient out-of-SOA robustness of SiC power MOSFETs

SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation

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