Energy calibration of the 500 kV heavy ion implanter ionas

Uhrmacher, M.; Pampus, K.; Bergmeister, F.J.; Purschke, D.; Lieb, Klaus

doi:10.1016/0168-583x(85)90688-3

Cited by 339 publications

(85 citation statements)

References 15 publications

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“…This limits its T = 1 content to less than 8%. The T=I assignment to the l1867keV level, which is the Ep = 293 keV resonance of the 27Al(p, 7) reaction, rests exclusively on a reported [24] value F = 59 _+ 14eV of its total width, which has been denounced as erroneous in recent work [5] from its strong M1 decay to both a T = 0 level (Ex = 1779keV, U = 2 +) and a T = 1 level (Ex = 10376keV). The influence of this mixing is too weak to impair the conclusions drawn above but makes possible a unique U = 3 + assignment to the 12 866 keV level.…”

Section: Isotopic Spin Assignmentsmentioning

confidence: 97%

The structure of28Si above 10 MeV excitation energy II: Assignments of quantum numbers

Brenneisen

Grathwohl

Lickert

et al. 1995

Z. Physik A - Hadrons and Nuclei

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Abstract. New assignments of quantum numbers have been obtained for more than 50 levels in 2ssi between 8953 and 15915 keV excitation energy. They are based on the measurement of 7-ray angular distributions or anisotropics on 29 resonances of the 27Al(p,7) reaction and on the 24Mg(c~,7) resonance at E~ = 3355keV. A total of 15 high-spin states with I = 5-7 has been obtained and the spectrum of T = 1 states has been identified up to 15 915 keV excitation energy and a maximum spin I=6.

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Section: Isotopic Spin Assignmentsmentioning

confidence: 97%

The structure of28Si above 10 MeV excitation energy II: Assignments of quantum numbers

Brenneisen

Grathwohl

Lickert

et al. 1995

Z. Physik A - Hadrons and Nuclei

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“…All the ion implantations were performed at normal incidence by means of the Göttingen implanter IONAS [12] and an electric xy sweeping system. According to calculations with the SRIM2000 code [13], the ions have a mean projected ion range of 110 nm when using the atomic density of 6.45 × 10 22 atoms/cm 3 in amorphous SiO 2 .…”

Section: Methodsmentioning

confidence: 99%

Na-irradiated alpha-quartz: chemical epitaxy and luminescence

et al. 2008

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Doping of α-quartz by ion implantation leads to amorphization even at low fluences, but subsequent annealing in air or oxygen can restore the crystalline order (chemical epitaxy). Here we report on measurements of RBS channeling and cathodoluminescence (CL) spectra during chemical epitaxy of α-quartz irradiated with 50-keV Na-ions and annealed in 18 O 2 -gas. In particular, the variation of the damage profile and CL spectra (the latter taken at 10 K and 300 K) as functions of the ion fluence will be discussed. The CL spectra at 10 K are dominated by a 2.90-eV band and differ greatly from the ones taken at 300 K; the intensity of this band increases strongly with the Na ion fluence. Some conclusions concerning the underlying photoactive defect structures will be drawn.

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“…The samples then passed a cumulative ion mixing sequence including RBS analysis after each irradiation step. All irradiations and RBS analyses were carried out at the G/Sttingen 530kV ion implanter IONAS [7].…”

Section: Ion Irradiationmentioning

confidence: 99%

Ion beam induced modifications of TiN and Ti films on Al-3% Mg substrates

et al. 1992

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Abstract. Thin titanium nitride films (50-110nm) deposited via magnetron sputtering on A1 ÷ 3wt.% Mg substrates were irradiated with Ar, Kr, and Xe ion beams at room temperature and with energies between 0.1.0.9MeV. Sputtering yields and interface mixing rates were determined using Rutherford backscattering (RBS) as depth profiling method. The obtained TiN sputtering yields for Ar and Xe irradiation are found to be in good agreement with predictions of the Sigmund approach. A systematic study with Ar and Xe beams revealed a 79.20 Ion beam mixing (IBM) has attracted considerable interest in the last years due to its potential for technological applications. While IBM is already commonly used to passivate and harden steel surfaces [1], it has also been shown that ion beam induced interface mixing can greatly improve the adhesion of thin films [2]. Especially hard coatings like TiN which are deposited via "cold" PVD-methods onto a substrate are of technological interest. Here IBM has proved to be a suitable method to significantly improve the film adhesion, wear resistance and corrosion protection without exposing the substrate material to a harmful heat treatment [3]. PACS:However the understanding of the physical processes underlying IBM and the investigation of unwanted sideeffects such as surface sputtering and segregation of the implanted mixing gas are essential to optimize the ion beam parameters. While previous work [4,5] dealt with the performance of IBM on Ti and TiN coatings on steel substrates the present detailed study focuses on the ion induced modifications of TiN and Ti coatings on A1-3% Mg which is another technically relevant substrate material. In a systematic manner the modifications after irradiation with Ar, Kr, and Xe ions with energies ranging )' Present address: Max-Planck-Institut f'tir Festk/Srperforschung, Heisenbergstrasse 1, W-7000 Stuttgart 80, Fed. Rep. Germany from 0.05-1.0 MeV were investigated by means of the RBS technique. This method proved to be particularly well suited for this system since the atomic masses of the film, the substrate and the ion beams are well separated.After giving details of the experimental procedure and data analysis in Sect. 1, the limiting effects of the IBM technique, surface sputtering and segregation of the implanted mixing gas, will be presented and discussed in Sect. 2. The major emphasis of this study lies on the interface mixing process itself; in Sect. 3, data and model calculations of the ion beam induced mass transport will be presented.

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Energy calibration of the 500 kV heavy ion implanter ionas

Cited by 339 publications

References 15 publications

The structure of28Si above 10 MeV excitation energy II: Assignments of quantum numbers

The structure of28Si above 10 MeV excitation energy II: Assignments of quantum numbers

Na-irradiated alpha-quartz: chemical epitaxy and luminescence

Ion beam induced modifications of TiN and Ti films on Al-3% Mg substrates

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