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1974
DOI: 10.1016/s0022-3697(74)80102-2
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Energy bands in stannic oxide (SnO2)

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Cited by 163 publications
(67 citation statements)
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“…26,28 The agreement of a VBM of Γ + 3 also settled the symmetry assignment of the Sn s-derived conduction-band minimum (CBM) as Γ + 1 , as suggested by experimental arguments 13,14,29 and calculations. 9,11 The experimental results largely agree that the lowest dipole-allowed direct (direct-allowed) transition features a strong polarization anisotropy, but the origin of this transition is heavily debated. Experimental 10 as well as theoretical [7][8][9]11 reports are plagued by inconsistencies in the ordering and relative energies of the lower-lying VB states.…”
Section: Introductionmentioning
confidence: 82%
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“…26,28 The agreement of a VBM of Γ + 3 also settled the symmetry assignment of the Sn s-derived conduction-band minimum (CBM) as Γ + 1 , as suggested by experimental arguments 13,14,29 and calculations. 9,11 The experimental results largely agree that the lowest dipole-allowed direct (direct-allowed) transition features a strong polarization anisotropy, but the origin of this transition is heavily debated. Experimental 10 as well as theoretical [7][8][9]11 reports are plagued by inconsistencies in the ordering and relative energies of the lower-lying VB states.…”
Section: Introductionmentioning
confidence: 82%
“…9,11 The experimental results largely agree that the lowest dipole-allowed direct (direct-allowed) transition features a strong polarization anisotropy, but the origin of this transition is heavily debated. Experimental 10 as well as theoretical [7][8][9]11 reports are plagued by inconsistencies in the ordering and relative energies of the lower-lying VB states. Nagasawa and Shionoya reported an allowed transition value of 3.75 eV for light polarized perpendicular to the tetragonal c axis (E ⊥ c), which they associated with a VB of symmetry Γ − 5 lying 0.15 to 0.20 eV below the VBM.…”
Section: Introductionmentioning
confidence: 82%
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“…The SnO 2 lm is a transparent conductive coating material and a n-type semiconductor with a wide band gap (approximately 3.7 eV) [1] and tetragonal rutile structure. The SnO 2 lm shows the best thermal and chemical stability, it is inexpensive, and it has good adhesion to most of the substrates, however it has a high resistivity.…”
Section: Introductionmentioning
confidence: 99%
“…The SnO 2 lm is a transparent conductive coating material and an n-type semiconductor with a wide band gap (approximately 3.7 eV) [1] and has tetragonal rutile structure. The SnO 2 lm shows the best thermal and chemical stability, it is inexpensive, and it has good adhesion to most of the substrates, but it has high resistivity.…”
Section: Introductionmentioning
confidence: 99%