Energy‐Band Structure: Effective Masses

Interband optical transitions in highly mismatched ZnTe1−xOx and Zn1−yCdyTe1−xOx alloys with Cd content y = 0.1 and 0.32 and oxygen content x < 0.016 grown on ZnTe substrates were studied by photoreflectance (PR) and photoluminescence (PL) in a broad temperature range. The incorporation of oxygen into a Zn(Cd)Te matrix results in a splitting of the conduction band (CB) into two E− and E+ subbands forming a semiconductor with an intermediate band. In ZnTeO, only the E− band could be probed by PR and there was no PL signal. An addition of Cd atoms to form a ZnCdTeO quaternary alloy significantly improves the optical quality as evidenced by an emergence of an E+ related transition in the PR spectra and the appearance of a PL emission related to the E− band visible up to 260 K. Moreover, for Cd content above 25%, a change in the E− band character is observed from localized O-like to CB-like. The analysis of a PR signal shows a strong reduction of the temperature dependence of the energy gap of Zn(Cd)TeO alloys compared to ZnTe. The temperature related reduction of the bandgap shift with increasing O content is well explained by the band anticrossing interaction between the temperature dependent conduction band of the host Zn(Cd)Te matrix and the temperature independent energy of highly localized O states.

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Nearly lattice-matched Zn1-zCdzSe/Zn1-xCdxSe/Zn1-yMgySe (z > x) quantum wells for yellow emission

Villa-Martínez

Banthí-Barcenas

Bahena

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The authors present the results of the modeling and epitaxial growth of a nearly lattice matched Zn1-zCdzSe/Zn1-xCdxSe/Zn1-yMgySe quantum well (QW) heterostructure with yellow emission. The ZnCdSe QW is composed of regions with two different Cd content: in the center, seven monolayers of Zn1-zCdzSe with z Cd content are surrounded on each side by eight Zn1-xCdxSe monolayers with x Cd content (z > x). These last regions are lattice matched to the Zn1-yMgySe barrier. The quantum well design and modeling was based on calculations employing the transfer matrix method. The ZnCdSe quantum well layers were grown in a layer-by-layer mode by submonolayer pulsed beam epitaxy within ZnMgSe barriers grown by molecular beam epitaxy. The low temperature photoluminescence spectrum presented yellow excitonic emission at 2.176 eV, which is in very good agreement with the model calculations. At room temperature, the emission shifted to 2.112 eV, a deep yellow color.

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Energy‐Band Structure: Effective Masses

Cited by 3 publications

References 48 publications

Selective substitution induced anomalous phonon stiffening within quasi-one-dimensional P—P chains in SiP2

Selective substitution induced anomalous phonon stiffening within quasi-one-dimensional P—P chains in SiP2

Effects of the host conduction band energy on the electronic band structure of ZnCdTeO dilute oxide alloys

Nearly lattice-matched Zn1-zCdzSe/Zn1-xCdxSe/Zn1-yMgySe (z > x) quantum wells for yellow emission

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Energy‐Band Structure: Effective Masses

Cited by 3 publications

References 48 publications

Selective substitution induced anomalous phonon stiffening within quasi-one-dimensional P—P chains in SiP2

Selective substitution induced anomalous phonon stiffening within quasi-one-dimensional P—P chains in SiP2

Effects of the host conduction band energy on the electronic band structure of ZnCdTeO dilute oxide alloys

Nearly lattice-matched Zn1-zCdzSe/Zn1-xCdxSe/Zn1-yMgySe (z &gt; x) quantum wells for yellow emission

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Nearly lattice-matched Zn1-zCdzSe/Zn1-xCdxSe/Zn1-yMgySe (z > x) quantum wells for yellow emission