2010
DOI: 10.1103/physrevb.81.075114
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Energy band structure and optical response function of icosahedralB12As2: A spectroscopic ellipsometry and first-principles calculational study

Abstract: An experimental and theoretical study on the dielectric-response function of icosahedral B 12 As 2 in the spectral region between 1.24 and 9.8 eV is presented. Comprehensive experimental information on the energy band structure from the analysis of features in the optical dispersion was complemented by spin-orbit firstprinciples calculations. The lowest indirect band gap width is 3.2 eV; the two lowest direct interband transitions are at 3.46 and 3.9 eV. High-energy critical points are assigned to specific ele… Show more

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Cited by 24 publications
(36 citation statements)
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“…(2), typically results in an overestimation of the maximum T for the boundary between a single-phase region (α) and a miscibility gap (α + α ), and thus it should be taken as an upper limit. Since boron subpnictides are usually synthesized at T 1300 K [19,21,24,[67][68][69], one can, based on our prediction, expect the intermixing of As and P atoms at the diatomic chain sites, i.e., a formation of B 12 (As 1−x P x ) 2 , when synthesizing a mixture between B 12 P 2 and B 12 As 2 . Such an intermixing of As and P atoms in B 12 (As 1−x P x ) 2 is also expected to possibly quench to room temperature, at which B 12 (As 1−x P x ) 2 stays as a metastable state due to a lack of atomic diffusion at low temperature, due to strong interatomic covalent bonds in icosahedral boron-rich solids.…”
Section: Sa-sqs Modelmentioning
confidence: 71%
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“…(2), typically results in an overestimation of the maximum T for the boundary between a single-phase region (α) and a miscibility gap (α + α ), and thus it should be taken as an upper limit. Since boron subpnictides are usually synthesized at T 1300 K [19,21,24,[67][68][69], one can, based on our prediction, expect the intermixing of As and P atoms at the diatomic chain sites, i.e., a formation of B 12 (As 1−x P x ) 2 , when synthesizing a mixture between B 12 P 2 and B 12 As 2 . Such an intermixing of As and P atoms in B 12 (As 1−x P x ) 2 is also expected to possibly quench to room temperature, at which B 12 (As 1−x P x ) 2 stays as a metastable state due to a lack of atomic diffusion at low temperature, due to strong interatomic covalent bonds in icosahedral boron-rich solids.…”
Section: Sa-sqs Modelmentioning
confidence: 71%
“…1(b)]. Owing to their crystal structures, governed by B 12 clusters, B 12 As 2 and B 12 P 2 display several highly valued properties [17][18][19], e.g., * anekt@ifm.liu.se high chemical stability, high melting point (T m > 2300 K), and wide electronic band gap (E g > 3 eV). As a consequence, the two subpnictides are promising materials for fabrication of betavoltaic cells [20] and high-temperature electronic [21] and thermoelectric devices [22,23].…”
Section: Introductionmentioning
confidence: 99%
“…In addition, in such compound materials, neutron capture and ionization generation occur in the same media, allowing full absorption of secondary particles and, ideally, complete charge collection of the generated electrons and holes. Among all the candidate semiconductor materials, icosahedral boron arsenide (B 12 As 2 ) particularly is appealing for thermal neutrons detection due to its wide band-gap (3.20-3.47 eV) [2][3][4][5] and potentially good carrier-transport properties. As our first step in assessing B 12 As 2 material for radiation detection, we measured its optical properties especially the photocurrent response to a short-wavelength LED and low-temperature electrical properties.…”
Section: -2mentioning
confidence: 99%
“…Apart from being synthesized, using the chemical vapor deposition (CVD) technique for instance [27,[94][95][96][97][98], B 12 As 2 and B 12 P 2 can also be obtained from the irreversible thermal decompositions of zinc-blende boron arsenide (BAs) and boron phosphide (BP) at high temperature (T 1200 K), respectively [99][100][101]. BAs, in itself, is also of interest, as it has been predicted to have a remarkably high value of thermal conductivity (κ) at room temperature (2240 W·m…”
Section: Boron Subarsenide and Subphosphidementioning
confidence: 99%
“…Compared to the other icosahedral boron-rich solids, in particular boron carbide, having been frequently addressed in the literature [1,6,17,20,25,27,28,30,35,36,84,91,[94][95][96][108][109][110][111][112][113][114], relatively few studies have so far been made on boron subnitride [19,[115][116][117][118][119][120]. For this reason, several issues about boron subnitride, for example its stable compositions, properties, as well as the correct representation of its basic structural unit, are still inconclusive.…”
Section: Boron Subnitridementioning
confidence: 99%